Examination of the temperature related structural defects of InGaN/GaN solar cells

Durukan, İlknur Kars; Bayal, Özlem; Kurtuluş, Gürkan; Baş, Yunus; Gültekin, Ali; Öztürk, Mustafa Kemal; Çörekçí, S.; Tamer, Mehmet; Özçelik, Süleyman; Özbay, Ekmel

doi:10.1016/j.spmi.2015.07.061

Cited by 11 publications

(3 citation statements)

References 25 publications

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“…Tablo 1 de Örnek A ve B nin GaN tabakalarının (002), (004), ( 006), ( 102) ve (121) düzlemlerinin teta ve FWHM (ortalama yarı genişlik) değerleri verilmektedir. (002), ( 004), (006) düzlemleri hegzagonal kristal yapının düzlemleridir [10]. Hegzagonal yapıların yapı kalitesi ve kusur özellikleri talodaki veriler aracılığıyla analiz edilebilir.…”

Section: Sonuçlar Ve Tartışmaunclassified

InGaN/GaN LED Yapıların Mozaik Yapı Analizi

Durukan

Öztürk

Özçelik

et al. 2018

European Journal of Science and Technology

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Bu çalışmada, MOCVD yöntemi ile üretilen InGaN/GaN ışık yayan diyot (LED) yapılarının mozaik yapıları analiz edildi. Safir alttaş üzerine biriktirilen, farklı In kompozisyonuna sahip InGaN/GaN bariyer tabakasının mozaik yapı üzerine etkisi Yüksek Çözünürlü X Işını Kırınımı (HR-XRD) yöntemi ile karakterize edildi. Amacımız mozaik yapı hesaplarından yararlanarak LED yapısının kalitesini arttırmaktır. Günümüzde LED' lerin geniş bir kullanım alanına sahip olmasından dolayı sektörde büyük bir pazar payı bulunmaktadır. Özellikle InGaN gibi, GaN bazlı LED' ler arsenik bazlı LED' lerden daha yüksek güç, sıcaklık ve frekans aralıklarında çalışabilirler. Ancak GaN tabanlı LED' ler hala yüksek kusur yoğunluklarına sahiptir. Bu nedenle çalışmalarımızda mozaik yapı analizi yapıldı. Hesaplamalarımızda Vegard ve William Hall yarı deneysel metotları kullanıldı. Kompozisyonun, kenar ve vida türü kusurların azalmasına yol açan önemli bir faktör olduğunu söyleyebiliriz.

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Section: Sonuçlar Ve Tartışmaunclassified

InGaN/GaN LED Yapıların Mozaik Yapı Analizi

Durukan

Öztürk

Özçelik

et al. 2018

European Journal of Science and Technology

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“…In their experiments, the edge dislocations intensities show a downward trend after annealing. 21 Early studies have proved that the edge dislocations acting as nonradiative recombination centers and reduce the emission. 22 So we think that the decrease of edge dislocations cause the enhancement of the PL intensities when the annealing temperature is 910…”

Section: -4mentioning

confidence: 99%

High-resistive layers obtained through periodic growth and in situ annealing of InGaN by metalorganic chemical vapor deposition

Zhang

Liu

et al. 2016

AIP Advances

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High-resistive layers were obtained by periodic growth and in situ annealing of InGaN. The effect of the annealing temperature of InGaN on the indium content and the material sheet resistive was investigated. The indium content decreased as the increase of in situ annealing temperature. Additionally, the material sheet resistance increased with the increase of the in situ annealing temperature for the annealed samples and reached 2 × 1010Ω/sq in the light and 2 × 1011Ω/sq in the dark when the in situ annealing temperature reached 970∘C. The acquirement of high-resistive layers is attributed to the generation of indium vacancy-related defects. Introducing indium vacancy-related defects to compensate background carriers can be an effective method to grow high-resistance material.

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“…Indeed, its bandgap can cover the whole solar spectrum, solely by changing its Indium composition [1,2]. tent high enough to allow the optimal covering of the whole solar spectrum [9,10]. For these reasons the InGaN based solar cell is still in early development stages and the reported PV efficiency is still very low to be competitive with other well established thin films technologies [11].…”

Section: Introductionmentioning

confidence: 99%

Simulation study of a new InGaN p-layer free Schottky based solar cell

Adaine

Hamady

Fressengeas

2016

Superlattices and Microstructures

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On the road towards next generation high efficiency solar cells, the ternary Indium Gallium Nitride (InGaN) alloy is a good passenger since it allows to cover the whole solar spectrum through the change in its Indium composition. The choice of the main structure of the InGaN solar cell is however crucial. Obtaining a high efficiency requires to improve the light absorption and the photogenerated carriers collection that depend on the layers parameters, including the Indium composition, p-and n-doping, device geometry. . . Unfortunately, one of the main drawbacks of InGaN is linked to its p-type doping, which is very difficult to realize since it involves complex technological processes that are difficult to master and that highly impact the layer quality.In this paper, the InGaN p-n junction (PN) and p-i-n junction (PIN) based solar cells are numerically studied using the most realistic models, and optimized through mathematically rigorous multivariate optimization approaches. This analysis evidences optimal efficiencies of 17.8% and 19.0% for the PN and PIN structures. It also leads to propose, analyze and optimize p-layer free InGaN Schottky-Based Solar Cells (SBSC): the Schottky structure and a new MIN structure for which the optimal efficiencies are shown to be a little higher than for the conventional structures: respectively 18.2% and 19.8%.The tolerance that is allowed on each parameter for each of the proposed cells has been studied. The new MIN structure is shown to exhibit the widest tolerances on the layers thicknesses and dopings. In addition to its being p-layer free, this is another advantage of the MIN structure since it implies its better reliability. Therefore, these new InGaN SBSC are shown to be alternatives to the conventional structures that allow removing the p-type doping of InGaN while giving photovoltaic (PV) performances at least comparable to the standard multilayers PN or PIN structures.

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Examination of the temperature related structural defects of InGaN/GaN solar cells

Cited by 11 publications

References 25 publications

InGaN/GaN LED Yapıların Mozaik Yapı Analizi

InGaN/GaN LED Yapıların Mozaik Yapı Analizi

High-resistive layers obtained through periodic growth and in situ annealing of InGaN by metalorganic chemical vapor deposition

Simulation study of a new InGaN p-layer free Schottky based solar cell

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