Examination of Si Substrate Surface after Different Chemical Pretreatments by Means of Nulling Ellipsometry

Beklemishev, V. I.; Levenets, V.V.; Makhonin, I. I.; Minazhdinov, M. S.; Seletskaia, I. V.

doi:10.1149/1.2054765

Cited by 3 publications

(15 citation statements)

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“…The nulling ellipsometric experimental data on the chemically treated Si surfaces are taken from the work of Beklemishev et al [10]. The samples used by them were n-and p-type (100)-oriented Si wafers of resistivity in the range 4.5-20 cm.…”

Section: An Experimental Example and Discussionmentioning

confidence: 99%

“…The samples used by them were n-and p-type (100)-oriented Si wafers of resistivity in the range 4.5-20 cm. For convenience, we reproduce in table 1 the essential steps of the different chemical treatments carried out on Si wafers in the above work [10].…”

Section: An Experimental Example and Discussionmentioning

confidence: 99%

“…and could thus be estimated respectively to within ±0.01 • and ±0.02 • with all these steps taken to reduce the errors. and were measured ( = 70 • , λ = 6328 Å) for these samples after each chemical treatment (table 1) with a delay of 1 day [10].…”

Section: An Experimental Example and Discussionmentioning

confidence: 99%

“…However, the fitting procedure used therein should necessarily have brought out a number of valid solutions for the three parameters they sought, the real and imaginary parts of the optical function of the interfacial layer as well as its thickness, because the quantity of experimental data taken for and was limited. In addition, accurate values are required for the optical parameters of the stable upper film of SiO 2 and the substrate, and for the thickness of this film which was assumed arbitrarily to be 10 Å [10].…”

Section: An Experimental Example and Discussionmentioning

confidence: 99%

“…This paper deals with the evaluation of the effective layer thickness of chemically cleaned Si surfaces from the null-ellipsometric data. The experimental data on differently treated Si wafers obtained by Beklemishev et al [10] are considered in this work. The thickness is determined together with the angle of incidence assuming the refractive index of SiO 2 for the surface layer remaining after the chemical treatment, which is assumed transparent.…”

Section: Introductionmentioning

confidence: 99%

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Nulling ellipsometry in the study of chemically treated Si surfaces

Easwarakhanthan¹

1997

J. Phys. D: Appl. Phys.

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The published fixed-wavelength nulling ellipsometric data on chemically cleaned silicon (Si) surfaces are re-interpreted in terms of error analyses using a three-phase model (air - layer - substrate). The effective thickness of the surface layer formed by the chemical treatment as well as the angle of incidence at which the surface ellipsometric data have been measured are evaluated from this model in which the surface layer is considered an equivalent dielectric film of known refractive index. The error analyses which accompany the computation procedure show that such ultra-thin surface layer thicknesses can be evaluated with sufficient accuracy in spite of the inaccurate knowledge of the layer index, from nulling ellipsometers producing angular errors of a few hundredths of a degree. The correlation between the angle of incidence and the substrate's real index value found allows the latter to be corrected, provided that the angle of incidence is measured directly with sufficient accuracy. The layer thickness values are deduced from the null-ellipsometric data measured for Si(100) surfaces subjected to different chemical treatments and are compared with those found by spectroscopic ellipsometry. Mainly layer thicknesses of about 6.5 and 12 Å are detected respectively on HF-treated and SC1 ()-oxidized Si wafers. It is thus shown that preliminary results on the effect of chemical treatment of substrates could be obtained more rapidly from fixed-wavelength nulling ellipsometric measurements than they could by spectroscopic ellipsometric methods.

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Section: An Experimental Example and Discussionmentioning

confidence: 99%

Section: An Experimental Example and Discussionmentioning

confidence: 99%

Section: An Experimental Example and Discussionmentioning

confidence: 99%

Section: An Experimental Example and Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Nulling ellipsometry in the study of chemically treated Si surfaces

Easwarakhanthan¹

1997

J. Phys. D: Appl. Phys.

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Numerical calibration of the angle of incidence in ellipsometers

Easwarakhanthan¹,

Ravelet²

1996

Meas. Sci. Technol.

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The experimental error in the angle of incidence strongly affects the film optical constants and thickness sought from the ellipsometric data, particularly when the film is thinner than 200 Å. This angle should therefore be accurately measured and this has been a frequently faced difficulty, especially in fixed-angle-of-incidence and in situ ellipsometers. We describe in this paper two numerical calibration procedures evaluating the angle of incidence from the ellipsometric data and measured on well-identified film-substrate reflecting structures either with a known or with an unknown film refractive index. The procedures rapidly determine the angle of incidence independently of the film thickness. An error analysis shows that the angle of incidence can thus be determined with an uncertainty of a few hundredths of a degree from ellipsometers inducing the same order of angular errors. The thickness ranges of films yielding such lower uncertainties are deduced from the error analysis. The effect of substrate real index error on this uncertainty is studied in particular. The supplementary results produced therein may be used in data interpretation while checking the angle of incidence if it is accurately measured by some other method. The procedures may also be easily adopted to variably damped least-squares (VDLS) algorithms employed in real-time monitoring of films during growth. The calibration procedures are illustrated for all these aspects with experimental data from real reflecting systems.

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Chemical Stability of HBF₄-Treated (100)Si Surfaces

Levenets¹,

Beklemishev²,

Kirilenko³

et al. 1995

Jpn. J. Appl. Phys.

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Si(100) surfaces were modified by means of enhanced RCA procedure with “ HBF4-last” and “HF-last”. Nulling ellipsometric (NE) and secondary ion mass spectrometric (SIMS) measurements revealed that HBF4-treated Si surface is more strongly passivated by hydrogen and fluorine than HF-treated one: the oxidation rate of the HBF4-treated Si surfaces in air was found to be lower than that of the HF-treate surface. Scanning tunneling microscope (STM) images of HBF4-cleaned surface after 18 h storage in air were quite stable during observation, scanning could be easily performed over a wide area on every plot we chose.

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Examination of Si Substrate Surface after Different Chemical Pretreatments by Means of Nulling Ellipsometry

Cited by 3 publications

References 1 publication

Nulling ellipsometry in the study of chemically treated Si surfaces

Nulling ellipsometry in the study of chemically treated Si surfaces

Numerical calibration of the angle of incidence in ellipsometers

Chemical Stability of HBF₄-Treated (100)Si Surfaces

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Examination of Si Substrate Surface after Different Chemical Pretreatments by Means of Nulling Ellipsometry

Cited by 3 publications

References 1 publication

Nulling ellipsometry in the study of chemically treated Si surfaces

Nulling ellipsometry in the study of chemically treated Si surfaces

Numerical calibration of the angle of incidence in ellipsometers

Chemical Stability of HBF4-Treated (100)Si Surfaces

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Product

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Chemical Stability of HBF₄-Treated (100)Si Surfaces