Evolution of V-pits in the ammonothermal growth of GaN on HVPE-GaN seeds

Li, Tengkun; Ren, Guoqiang; Su, Xujun; Xie, Kaihe; Xia, Zhenghui; Gao, Xiaodong; Wang, Jianfeng; Xu, Ke

doi:10.1039/d2ce01332k

Cited by 5 publications

(4 citation statements)

References 37 publications

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“…One focus has been surface morphology influences on crystal growth, including both semi-polar and non-polar faces [20,32,33]. Their most recent paper looks at the evolution of V-pits during growth [34]. Gaps initially present from HVPE growth defects become filled in via lateral and oblique growth planes as growth proceeds.…”

Section: Progress In Growth Methodsmentioning

confidence: 99%

Progress in Ammonothermal Crystal Growth of Gallium Nitride from 2017–2023: Process, Defects and Devices

Stoddard

Pimputkar

2023

Crystals

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Gallium nitride continues to be a material of intense interest for the ongoing advancement of electronic and optoelectronic devices. While the bulk of today’s markets for low-performance devices is still met with silicon and blue/UV LEDs derived from metal–organic chemical vapor deposition gallium nitride grown on foreign substrates such as sapphire and silicon carbide, the best performance values consistently come from devices built on bulk-grown gallium nitride from native seeds. The most prominent and promising of the bulk growth methods is the ammonothermal method of high-pressure solution growth. The state-of-the-art from the last five years in ammonothermal gallium nitride technology is herein reviewed within the general categories of growth technology, characterization and defects as well as device performance.

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Section: Progress In Growth Methodsmentioning

confidence: 99%

Progress in Ammonothermal Crystal Growth of Gallium Nitride from 2017–2023: Process, Defects and Devices

Stoddard

Pimputkar

2023

Crystals

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“…As part of instrumentation innovation, numerous supervised learning algorithms could be utilized in Raman spectrometer data analysis programs to conduct real-time analysis of spectra, which can be separated into distinct submethods such as methods based on discriminate analysis, or discriminant function analysis, artificial neural network based models or support vector machines, regression analysis like multiple linear regression based models, and evolutionary based algorithms such as genetic algo-rithms, genetic programming and computing, evolutionary algorithms, and evolutionary programming in new functional materials. 67,68…”

Section: Materials and Instrumentation Innovation: Ongoingmentioning

confidence: 99%

Developments in Raman Spectromicroscopy for Strengthening Materials and Natural Science Research: Shaping the Future of Physical Chemistry

Pathak,

Rani,

Sati

et al. 2024

ACS Phys. Chem Au

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Spectroscopic techniques, especially Raman spectroscopy, cover a large subset in the teaching and research domain of physical chemistry. Raman spectroscopy, and other Raman based techniques, establishes itself as a powerful analytical tool with diverse applications across scientific, industrial, and natural science (including biology and pharmacy) fields and helps in the progress of physical chemistry. Recent advancements and future prospects in Raman spectroscopy, focusing on key areas of innovation and potential directions for research and development, have been highlighted here along with some of the challenges that need to be addressed to prepare Raman based techniques for the future. Significant progress has been made in enhancing the sensitivity, spatial resolution, and time resolution of Raman spectroscopy techniques. Raman spectroscopy has applications in all areas of research but especially in biomedical applications, where Raman spectroscopy holds a great promise for noninvasive or minimally invasive diagnosis, tissue imaging, and drug monitoring. Improvements in instrumentation and laser technologies have enabled researchers to achieve higher sensitivity levels, investigate smaller sample areas with improved spatial resolution, and capture dynamic processes with high temporal resolution. These advancements have paved the way for a deeper understanding of molecular structure, chemical composition, and dynamic behavior in various materials and biological systems. It is high time that we consider whether Raman based techniques are ready to be improved based on the strength of the current era of AI/ML and quantum technology.

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“…Such flawless GaN crystals are mainly obtained from homoepitaxial growth on pristine GaN substrates, emphasizing the key role of GaN substrates in the development of world-class optoelectronic and high-power devices. [11][12][13][14][15][16] The sodium flux (Na-flux) method, as an approach to growing GaN crystals in a near thermodynamic equilibrium state, has unique advantages which make it a promising technique for producing high quality GaN crystals. 17,18 Since its inception in the late 1990s, the Na-flux method has evolved considerably over two decades, with remarkable progress in both the size and quality of the resulting crystals.…”

Section: Introductionmentioning

confidence: 99%

Studying the effect of temperature and pressure on GaN crystals via the Na-flux method

Wang,

Liu,

Tian

et al. 2024

CrystEngComm

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Evolution of V-pits in the ammonothermal growth of GaN on HVPE-GaN seeds

Abstract: The evolution of pit-type defects in the Am-GaN growth of GaN on HVPE-GaN is investigated in this paper.

Cited by 5 publications

References 37 publications

Progress in Ammonothermal Crystal Growth of Gallium Nitride from 2017–2023: Process, Defects and Devices

Progress in Ammonothermal Crystal Growth of Gallium Nitride from 2017–2023: Process, Defects and Devices

Developments in Raman Spectromicroscopy for Strengthening Materials and Natural Science Research: Shaping the Future of Physical Chemistry

Studying the effect of temperature and pressure on GaN crystals via the Na-flux method

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