Evolution of the Raman spectra from single-, few-, and many-layer graphene with increasing disorder

Ferreira, Erlon H. Martins; Moutinho, Marcus V. O.; Stavale, Fernando; Lucchese, Márcia Maria; Capaz, Rodrigo B.; Achete, Carlos A.; Jório, Ado

doi:10.1103/physrevb.82.125429

Cited by 646 publications

(483 citation statements)

References 38 publications

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“…(1) reduces to a single Lorentzian centered at ω(0). This Raman line-shape interpretation, which is known in literature as "phonon confinement model" or "spatial correlation model," has been successfully applied to explain the Raman scattering from several ion-bombarded crystals, for example, graphene [16], graphite [25], and GaAs [26], as well as to estimate the domain size of microcrystalline silicon [27,28] and the width of silicon nanowires [29].…”

Section: Resultsmentioning

confidence: 99%

“…It has indeed been reported that both Pos(E ) and Pos(A 1 ) decrease (increase) with tensile (compressive) in-plane strain [11,24], which is once again contrary to our experimental observations. However, although doping and strain will have an effect on the Raman spectra, the observed disorder-related evolution of the first-order peaks can instead be explained using a "phonon confinement model," as reported for ion-bombarded graphene [16] and other disordered crystals [25][26][27].…”

Section: Methodsmentioning

confidence: 99%

“…Ion bombardment is used as a method to introduce defects in 1L-MoS 2 , specifically, a manganese ion (Mn + ) gun to provide nanometer-sized defects [14], with a controllable defect density [14][15][16][17]. The introduction of structural disorder results in the observation of specific Raman signatures, thus indicating the viability of Raman spectroscopy as a high-throughput and nondestructive technique to quantify defects in 1L-MoS 2 .…”

Section: Introductionmentioning

confidence: 99%

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Effect of disorder on Raman scattering of single-layerMoS2

et al. 2015

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We determine the effect of defects induced by ion bombardment on the Raman spectrum of single-layer molybdenum disulfide. The evolution of both the linewidths and frequency shifts of the first-order Raman bands with the density of defects is explained with a phonon confinement model, using density functional theory to calculate the phonon dispersion curves. We identify several defect-induced Raman scattering peaks arising from zone-edge phonon modes. Among these, the most prominent is the LA(M) peak at ∼227 cm −1 and its intensity, relative to the one of first-order Raman bands, is found to be proportional to the density of defects. These results provide a practical route to quantify defects in single-layer MoS 2 using Raman spectroscopy and highlight an analogy between the LA(M) peak in MoS 2 and the D peak in graphene.

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Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Effect of disorder on Raman scattering of single-layerMoS2

et al. 2015

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“…The rest of the samples presented two additional disorder induced vibrational modes. The D mode located at 1,330-1,350 which is an intervalley process, originating from the transverse optical phonons around the Brillouin zone boundary K (Martins Ferreira et al, 2010). The D + D' mode located at ∼2,900 cm −1 , which is a combination band of the D and the D' vibrations.…”

Section: Resultsmentioning

confidence: 99%

Mapping of Graphene Oxide and Single Layer Graphene Flakes—Defects Annealing and Healing

et al. 2018

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Graphene has outstanding properties that make it an auspicious material for many applications. This work presents the production of graphene oxide (GO) via the Langmuir-Blodgett process and the subsequent restoration of single layer graphene flakes (SLGF) via the chemical reduction, and thermal annealing of the GO. Scanning electron microscopy (SEM) and optical images were used to evaluate the morphology and surface coverage of the substrate with GO flakes. Through this technique, smooth dispersion, controllable development, and population of the GO single flakes on the Si substrate without size limitation have been achieved. The height distribution of the GO was monitored after each processing step by AFM measurements. Additionally, the effects of each process on the structure of the samples was systematically studied via 2D Laser Raman spectroscopy (LRS) mapping. The determination of the layer number on each graphene flake was accomplished by monitoring the observed Raman shifts as a function of the position and confirmed via AFM measurements. The spectroscopic analysis of the single flakes was performed in order to study their topography and identify their quality as a function of the processing steps. Via the topographic 2D analysis of both the first-and second-order vibrational modes as a function of the position on the crystal, the degree of graphitization and/or the presence of defects, as well as the presence of internal stresses were mapped. Such a systematic determination of the effects of reduction and annealing on the structure of single layer graphene from reduced GO produced via the Langmuir-Blodgett process is reported for the first time in literature.

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“…It has been shown that this dependence has a quite general character with a maximum of the ratio (equal to about 3 in the case of 514 nm excitation) occurring at nD≈8×10 12 cm -1 . 23 The maximum value of I(D)/I(G) was obtained after the first (Ag) and the third (ZrO2) deposition, when the areal densities of the deposited material were 1.5×10 14 cm -1 and 2.7×10 15 , respectively. Consequently, only a small part of deposited atoms or ions -5% in the case of Ag and 0.3% in the case of ZrO2 -were active in forming the defects altering the Raman spectra.…”

Section: The Density Of the Induced Defects Nd Can Be Estimated From mentioning

confidence: 99%

Highly sensitive NO2 sensors by pulsed laser deposition on graphene

Kodu

Berholts

Kahro

et al. 2016

Applied Physics Letters

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Graphene as a single-atomic-layer material is fully exposed to environmental factors and has therefore a great potential for the creation of sensitive gas sensors. However, in order to realize this potential for different polluting gases, graphene has to be functionalized -adsorption centers of different types and with high affinity to target gases have to be created at its surface. In the present work, the modification of graphene by small amounts of laser-ablated materials is introduced for this purpose as a versatile and precise tool. The approach has been demonstrated with two very different materials chosen for pulsed laser deposition (PLD) -a metal (Ag) and a dielectric oxide (ZrO2). It was shown that the gas response and its recovery rate can be significantly enhanced by choosing the PLD target material and deposition conditions. The response to NO2 gas in air was amplified up to 40 times in the case of PLD-modified graphene, in comparison with pristine graphene, and it reached 7-8% at 40 ppb of NO2 and 20-30% at 1 ppm of NO2. The PLD process was conducted in a background gas (5 x10 -2 mbar oxygen or nitrogen) and resulted in the atomic areal

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Evolution of the Raman spectra from single-, few-, and many-layer graphene with increasing disorder

Cited by 646 publications

References 38 publications

Effect of disorder on Raman scattering of single-layerMoS2

Effect of disorder on Raman scattering of single-layerMoS2

Mapping of Graphene Oxide and Single Layer Graphene Flakes—Defects Annealing and Healing

Highly sensitive NO2 sensors by pulsed laser deposition on graphene

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