Evolution of the Raman 2D’ mode in monolayer graphene during electrochemical doping

Melníková-Komínková, Zuzana; Valeš, Václav; Frank, Otakar; Kalbáč, Martin

doi:10.1016/j.microc.2022.107739

Cited by 5 publications

(1 citation statement)

References 36 publications

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“…The electrode system with Au was cleaned in the following sequence: 1. deionised (DI) water, 2. acetone (MicroChemicals GmbH, Ulm, Germany), and 3. isopropanol (MicroChemicals GmbH) for 10 min. Graphene was grown by CVD in accordance with a previously established protocol [26][27][28]. Briefly, a 25 µm thick Cu foil with an area of the order of a few centimetres squared as a substrate was heated up to 1000 • C in an H 2 atmosphere and annealed for 40 min.…”

Section: Methodsmentioning

confidence: 99%

Electrical Contact Resistance of Large-Area Graphene on Pre-Patterned Cu and Au Electrodes

et al. 2022

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Contact resistance between electrically connected parts of electronic elements can negatively affect their resulting properties and parameters. The contact resistance is influenced by the physicochemical properties of the connected elements and, in most cases, the lowest possible value is required. The issue of contact resistance is also addressed in connection with the increasingly frequently used carbon allotropes. This work aimed to determine the factors that influence contact resistance between graphene prepared by chemical vapour deposition and pre-patterned Cu and Au electrodes onto which graphene is subsequently transferred. It was found that electrode surface treatment methods affect the resistance between Cu and graphene, where contact resistance varied greatly, with an average of 1.25 ± 1.54 kΩ, whereas for the Au electrodes, the deposition techniques did not influence the resulting contact resistance, which decreased by almost two orders of magnitude compared with the Cu electrodes, to 0.03 ± 0.01 kΩ.

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Section: Methodsmentioning

confidence: 99%