In this contribution I summarize our research on the formation of nanoparticles embedded in a-SiO 2 − x matrices. In particular, I focus on the Si diffusion in SiO 2−x matrices, and amorphous-to-crystalline phase transition in Si nanoparticles embedded in SiO 2−x .I show that Si diffusion can be rationalized in terms of three mechanisms: O-driven (i.e. driven by the change of Ocoordination), Si-driven, and bond-swapping (i.e. driven by the change of "local" stoichiometry). The relevance of each of these mechanisms depends on the silicon concentration in the sample and on the temperature. The O-driven mechanism dominates at low Si concentrations, and Si-driven and bond-swapping dominate at higher ones. At higher T the effect is mitigating the difference of contribution among the various mechanisms.Concerning amorphous-to-crystalline phase transition, I show that in small nanoparticles (radius ≤ 2 nm) the more stable phase at low T s is the amorphous one, i.e. there is an inversion of the relative stability between the two phases with respect to bulk systems. In larger nanoparticles the bulk-like behavior is recovered. High temperatures favors the crystal phase in small nanoparticles. These results can explain the experimental observations that nanoparticles undergo to a phase transition in preparation protocol adopting "high" annealing temperatures (T ≥ 1150 • C).