Evolution of the faceting, morphology and aspect ratio of gallium oxide nanowires grown by vapor–solid deposition

Hosein, Ian D.; Hegde, Manu; Jones, Peter D.; Chirmanov, Vadim; Radovanovic, Pavle V.

doi:10.1016/j.jcrysgro.2014.03.037

Cited by 31 publications

(20 citation statements)

References 59 publications

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“…These findings agree well with the results reported by Takeshi . As for anisotropic one‐dimensional (1D) structures formed by VS mechanism, the tip morphology plays a rather important role during the nanowire (NW) growth along the axis direction . Moreover, it is known that the crystal planes which have a high density of defect sites (discontinuities, such as kinks and ledges) will grow faster than those planes which are more atomically smooth.…”

Section: Resultssupporting

confidence: 90%

“…By further increasing the Cl/Ti ratio to 2.0 and 3.0, the resulting structures transformed from short, bamboo‐like nanorods into TiC octahedrons. As is known to all, low supersaturation favors crystal growth of one‐dimensional structure . Therefore, increasing the C/Ti or Cl/Ti ratio to a certain value will lead to short and thick whiskers or even particles.…”

Section: Resultsmentioning

confidence: 99%

“…The mechanism is used to explain the growth of nanostructures from direct condensation of the precursor vapor. The classical growth theories for flat crystal surfaces assume that discontinuities on the surface, such as kinks and ledges, act as sites for the incorporation of new atoms . High index crystal planes will have a higher density of these extended defect sites, and thus will grow faster than low index planes which are more atomically smooth.…”

Section: Resultsmentioning

confidence: 99%

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Synthesis and Growth Mechanism of TiC Whiskers by Carbothermal Reduction of Titania/Microcrystalline Cellulose

Xiong

Zhou

2015

J. Am. Ceram. Soc.

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TiC whiskers were synthesized by a typical chloride-assisted carbothermal reduction method using microcrystalline cellulose as a novel carbon source. Unlike previous research, Faceted TiC whiskers on the titanium oxide particles (Ti 3 O 5 ) were epitaxially grown via vapor-solid mechanism without catalyst. Liquid-liquid separation was used for product purification. A 90-95 vol% yield of TiC whiskers was observed, with 0.5 lm in diameter and 40-60 lm in length. X-ray diffraction study indicated that the lattice parameter of TiC increased (from 4.288 to 4.321 A) with increasing the C/Ti ratio and sintering temperature. Preferred growth was found to be the [100] direction from the lattice-resolved imaging. This study provided not only a new simple method for synthesizing TiC whiskers but also a new insight into the growth mode for TiC whiskers.

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Section: Resultssupporting

confidence: 90%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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Synthesis and Growth Mechanism of TiC Whiskers by Carbothermal Reduction of Titania/Microcrystalline Cellulose

Xiong

Zhou

2015

J. Am. Ceram. Soc.

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“…[4][5][6][7][8][9][10][11] The most established route to grow 1D nanostructures is catalyst assisted growth, which is also known as vaporliquid-solid (VLS) process, where a foreign catalyst is required to initiate the growth. [16] However, in previous studies, a systematic study of morphological, micro-structural, and luminescence properties in combination with growth mechanism are still missing. Therefore, to avoid the use of undesired impurity or catalyst in the final product, we need a catalyst free or self-catalytic approach to grow b-Ga 2 O 3 nanostructures.…”

Section: Introductionmentioning

confidence: 99%

Self‐Catalytic Growth of β‐Ga₂O₃ Nanostructures by Chemical Vapor Deposition

et al. 2014

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In this work, we have studied the synthesis of single crystalline self-catalyzed beta gallium oxide (b-Ga 2 O 3 ) nanostructures by chemical vapor deposition technique. We have adopted a new approach to grow the nanostructures instead of using conventional foreign metal nano-catalyst based-approaches. The as-grown nanostructures including nanowires and nanosheets (NSHs) were grown on spin-coated Ga 2 O 3 films. The structural studies such as X-ray diffraction, Raman and transmission electron microscope (TEM) investigations on the nanostructures showed monoclinic phase of Ga 2 O 3 and single crystalline structure. Furthermore, high-resolution TEM with a selected area electron diffraction pattern recorded on a single b-Ga 2 O 3 nanowire and nanosheet verified their single crystalline nature, having [001] as favorable growth direction. The energy dispersive Xray spectroscopy-elemental mapping of as-grown nanostructures indicated uniform distribution of Ga and O. Cathodoluminescence imaging and spectrum revealed excellent luminescence characteristics of nanostructures with a broad UV-blue emission band (1.80-4.20 eV nm) centered at 2.64 eV. This study also highlights the growth mechanism of NSHs. These b-Ga 2 O 3 nanostructures have great potential in nanofunctional devices.

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“…The preparation, structural analysis, and growth mechanism of quasi onedimensional β-Ga 2 O 3 nanostructures have been discussed in detail elsewhere. 33 Briefly, the Si (111) substrates (ca. 1 cm 2 in size) were cleaned by sonication in ethanol and acetone, washed with deionized water, and blown dry with nitrogen.…”

Section: ■ Experimental and Theoretical Methodsmentioning

confidence: 99%

Molecular Origin of Valence Band Anisotropy in Single β-Ga₂O₃ Nanowires Investigated by Polarized X-ray Absorption Imaging

2015

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The origin of anisotropy at the molecular and electronic structure levels in individual β-Ga 2 O 3 nanowires grown along the crystallographic b direction was studied using linearly polarized X-ray absorption imaging at both gallium L 3 and oxygen K edges. The O K-edge spectrum shows significant linear dichroism for the electric field vector of the X-rays oriented parallel and perpendicular to the nanowire long axis. The contributions from the three nonequivalent oxygen sites to the observed spectral anisotropy were elucidated by using FDMNES calculations in the framework of the multiple scattering theory. The role of relevant O and Ga orbitals in the linearly polarized O K-edge absorption was determined based on the point group symmetry arguments. The results of this work suggest mixed covalent and ionic character of the Ga−O bond in individual nanowires, with the dominant contribution of O 2p z orbitals to the absorption spectrum for the electric field vector oriented perpendicular, and O 2p x,y orbitals for the electric field vector oriented parallel to the nanowire long axis. Gallium 4p and d orbitals were found to contribute mostly to the antibonding states. These results improve the understanding of the origin of anisotropy in complex transparent metal oxide nanostructures, and could lead to the prediction of physical properties for different nanowire growth directions.

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Evolution of the faceting, morphology and aspect ratio of gallium oxide nanowires grown by vapor–solid deposition

Cited by 31 publications

References 59 publications

Synthesis and Growth Mechanism of TiC Whiskers by Carbothermal Reduction of Titania/Microcrystalline Cellulose

Synthesis and Growth Mechanism of TiC Whiskers by Carbothermal Reduction of Titania/Microcrystalline Cellulose

Self‐Catalytic Growth of β‐Ga₂O₃ Nanostructures by Chemical Vapor Deposition

Molecular Origin of Valence Band Anisotropy in Single β-Ga₂O₃ Nanowires Investigated by Polarized X-ray Absorption Imaging

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Evolution of the faceting, morphology and aspect ratio of gallium oxide nanowires grown by vapor–solid deposition

Cited by 31 publications

References 59 publications

Synthesis and Growth Mechanism of TiC Whiskers by Carbothermal Reduction of Titania/Microcrystalline Cellulose

Synthesis and Growth Mechanism of TiC Whiskers by Carbothermal Reduction of Titania/Microcrystalline Cellulose

Self‐Catalytic Growth of β‐Ga2O3 Nanostructures by Chemical Vapor Deposition

Molecular Origin of Valence Band Anisotropy in Single β-Ga2O3 Nanowires Investigated by Polarized X-ray Absorption Imaging

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Product

Resources

About

Self‐Catalytic Growth of β‐Ga₂O₃ Nanostructures by Chemical Vapor Deposition

Molecular Origin of Valence Band Anisotropy in Single β-Ga₂O₃ Nanowires Investigated by Polarized X-ray Absorption Imaging