Evolution of surface topography of fused silica by ion beam sputtering

Flamm, D.; Frost, Frank; Hirsch, D.

doi:10.1016/s0169-4332(01)00269-0

Cited by 95 publications

(63 citation statements)

References 26 publications

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“…(e), (f) Early and late time morphologies, as predicted by numerical integration of equation (10). Panels (a), (b) are reproduced from [7], and (c), (d) are taken from [57], all by permission. for 4 h., which is favorably compared in panel (a) of the same figure with the result provided by numerical integration of equation (9).…”

Section: Pattern Formation: Ion-beam Sputteringmentioning

confidence: 99%

“…The wavelength coarsening prior to the stationary state can be perhaps more easily visualized under oblique incidence conditions, when the pattern has a rippled shape. In figures 6(c) and (d) we show two AFM snapshots of the surface dynamics for fused silica undergoing bombardment at oblique incidence [57]. The black arrows represent the projection of the ion beam direction onto the target plane.…”

Section: Pattern Formation: Ion-beam Sputteringmentioning

confidence: 99%

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Universal non-equilibrium phenomena at submicrometric surfaces and interfaces

Cuerno

Castro

Muñoz-García

et al. 2007

Eur. Phys. J. Spec. Top.

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Abstract. The recent widespread interest in processes occurring at micro and nanometric scales has increased the physical relevance of the surfaces and interfaces constituting system boundaries, both at and far from equilibrium. In the latter case, universal properties occur, such as scale invariance (surface kinetic roughening), surface pattern formation or domain coarsening. However, descriptions of these systems feature limited predictive power when based merely on universality principles. We review examples from Materials Science at nano and submicrometric scales, that underlie the importance of describing growing surfaces by means of (phenomenological) constitutive laws, in order to correctly describe the rich behaviors experimentally found across many different systems. Additionally, this approach provides new generic models that are also of interest in the wider contexts of Pattern Formation and Non-Linear Science.

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Section: Pattern Formation: Ion-beam Sputteringmentioning

confidence: 99%

Section: Pattern Formation: Ion-beam Sputteringmentioning

confidence: 99%

Universal non-equilibrium phenomena at submicrometric surfaces and interfaces

Cuerno

Castro

Muñoz-García

et al. 2007

Eur. Phys. J. Spec. Top.

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“…Because of the high atomic density of Al, the erosion velocities of Si, Al, and Al 2 O 3 were more or less the same, and SiO 2 displayed the highest erosion velocities. 3 . Therefore, a strong SiO 2 micro-masking effect can be reasonably assumed to be caused by a mixed oxyfluoride, AlO x F y .…”

Section: Discussionmentioning

confidence: 99%

“…Low-energy ion beam sputtering (IBS) is a powerful bottom-up technology for generating diverse self-organized nanostructures, such as ripples and dots on different materials including amorphous SiO 2 [1][2][3][4][5][6][7], single crystalline Si [8][9][10][11][12], Ge [10,13] and Ag [14], as well as compound semiconductors GaSb [15] and InP [16]; the IBS technology offers the potential to achieve high throughput and fabrication of large areas [10,[17][18][19]. Ion beam parameters (species, incidence angle, energy, flux, etc) and substrate parameters (material, temperature, initial surface topography, etc) interact to generate the features of such nanopatterns.…”

Section: Introductionmentioning

confidence: 99%

Nanostructures on fused silica surfaces produced by ion beam sputtering with Al co-deposition

et al. 2017

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The ion beam sputtering (IBS) of smooth mono-elemental Si with impurity co-deposition is extended to a pre-rippled binary compound surface of fused silica (SiO 2 ). The dependence of the rms roughness and the deposited amount of Al on the distance from the Al source under Ar + IBS with Al co-deposition was investigated on smooth SiO 2 , pre-rippled SiO 2 , and smooth Si surfaces, using atomic force microscopy and X-ray photoelectron spectroscopy. Although the amounts of Al deposited on these three surfaces all decreased with increasing distance from the Al target, the morphology and rms roughness of the smooth Si surface did not demonstrate a strong distance dependence. In contrast to smooth Si, the rms roughness of both the smooth and pre-rippled SiO 2 surfaces exhibited a similar distance evolution trend of increasing, decreasing, and final stabilization at the distance where the results were similar to those obtained without Al co-deposition. However, the pre-rippled SiO 2 surfaces showed a stronger modulation of rms roughness than the smooth surfaces. At the incidence angles of 60° and 70°, dot-decorated ripples and roof-tiles were formed on the smooth SiO 2 surfaces, respectively, whereas nanostructures of closely aligned grains and blazed facets were generated on the pre-rippled SiO 2 , respectively. The combination of impurity co-deposition with pre-rippled surfaces was found to facilitate the formation of novel types of nanostructures and morphological growth. The initial ripples act as a template to guide the preferential deposition of Al on the tops of the ripples or the ripple sides facing the Al wedge, but not in the valleys between the ripples, leading to 2D grains and quasiblazed grating, which offer significant promise in optical applications. The rms roughness enhancement is attributed not to AlSi, but to AlO x F y compounds originating mainly from the Al source.

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“…As described in a review article by Valbusa et al [8], subsequently, many groups picked up these investigations-not only with (reactive) ion-beam machines, but also with (reactive) ion etching (RIE). Those investigations were usually not performed with amorphous glass, but rather for semiconductors or even metals [9][10][11][12][13][14][15][16][17][18][19][20][21][22][23]. The phenomenon observed and described in all of these publications is self-organization due to two compensating effects, which together stabilize the surface profile: first a tendency of surface structure shrinkage due to a preferred etch erosion at oblique flanks and secondly diffusion of the eroded particles into the etched depressions 2 Advances in OptoElectronics and adsorption.…”

Section: Introductionmentioning

confidence: 99%

nm- andμm-Scale Surface Roughness on Glass with Specific Optical Scattering Characteristics on Demand

Fouckhardt

Steingoetter

Brinkmann

et al. 2007

Advances in OptoElectronics

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During maskless ion etching of amorphous glass, self-organization can arise in certain etch parameter ranges, which leads to dense-lying dots/cones with typical diameters and heights in the 30-300 nm range. Another phenomenon, which results in cone sizes around 1 μm or more, is self-masking especially in the case of heterogeneous glasses like borosilicate glass as used in this contribution. Thus, a wide range of characteristic sizes and shapes of individual scatterers on the glass surface, jointly acting as a defined roughness, can be achieved resulting in specific optical scattering characteristics. This contribution gives results on borosilicate thin-glass dry etching. Certain surface morphologies are reported together with experimental results on their optical scattering characteristics.

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Evolution of surface topography of fused silica by ion beam sputtering

Cited by 95 publications

References 26 publications

Universal non-equilibrium phenomena at submicrometric surfaces and interfaces

Universal non-equilibrium phenomena at submicrometric surfaces and interfaces

Nanostructures on fused silica surfaces produced by ion beam sputtering with Al co-deposition

nm- andμm-Scale Surface Roughness on Glass with Specific Optical Scattering Characteristics on Demand

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