2019
DOI: 10.1016/j.jallcom.2019.06.273
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Evolution of polymorph and photoelectric properties of VO2 thin films with substrate temperature

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Cited by 9 publications
(6 citation statements)
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“…Finally, we compare our results with other works [ 21 , 28 , 30 , 57 ] in which the effect of T S on the phase transition properties of VO 2 thin films have been studied. These studies have employed RF reactive inverted cylindrical magnetron sputtering [ 21 ], RF magnetron sputtering [ 28 ], inductively coupled plasma (ICP)-assisted sputtering [ 30 ], and pulsed-laser deposition (PLD) [ 57 ] for thin film preparation. We also consider selected works [ 26 , 36 ] which have reported the production of high-quality VO 2 thin films at low substrate temperatures.…”
Section: Discussionmentioning
confidence: 58%
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“…Finally, we compare our results with other works [ 21 , 28 , 30 , 57 ] in which the effect of T S on the phase transition properties of VO 2 thin films have been studied. These studies have employed RF reactive inverted cylindrical magnetron sputtering [ 21 ], RF magnetron sputtering [ 28 ], inductively coupled plasma (ICP)-assisted sputtering [ 30 ], and pulsed-laser deposition (PLD) [ 57 ] for thin film preparation. We also consider selected works [ 26 , 36 ] which have reported the production of high-quality VO 2 thin films at low substrate temperatures.…”
Section: Discussionmentioning
confidence: 58%
“…On the contrary, in Figure 14 d, the Δ H values appear to be relatively unaffected by T S , and they seem to be mostly constant around 5.5 K, only films prepared at 450 °C have a large Δ H around 10 K. The T t values obtained from Ref. [ 57 ] are constant around 343 K. In addition, the Δ H drops with decreasing T S from 13 K and 5 K. However, if the phase transition sharpness and Δ σ are taken into consideration, these films in Refs. [ 28 , 57 ] do not display attributes associated with high-quality films with decreasing T S .…”
Section: Discussionmentioning
confidence: 82%
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