Evolution of hydrogen induced defects during annealing of plasma treated Czochralski silicon

Nordmark, Heidi; Ulyashin, A.; Walmsley, John C.; Tøtdal, Bård; Holmestad, Randi

doi:10.1016/j.nimb.2006.10.043

Cited by 15 publications

(19 citation statements)

References 10 publications

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“…2, curve A). This effect can be attributed to the deuterium gettering at plasma-induced structural defects, similar to those created by H + implantation [17][18][19][20]. Moreover, deuterium can be accumulated at the R p region, as reported earlier for several cases [11,12,17] .…”

Section: Deuterium Accumulated In Plasma Treatedsupporting

confidence: 60%

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Buried spongy‐like layers in silicon implanted with He⁺, annealed and treated in D⁺ plasma

Misiuk

Ulyashin

Barcz

et al. 2009

Phys. Status Solidi (c)

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Implantation of silicon with He+ ions (energy 300 keV, dose 5×1015 cm–2) and subsequent processing of Si:He structures at high temperature (HT) up to 1270 K under Ar hydrostatic pressure (HP) up to 1.2 GPa results in a creation of spongy‐like buried layer at the projected range of He ions, which is about 1.4 μm depth. Upon subsequent treatment of Si:He structures at 573 K in deuterium plasma under 3×102 Pa, deuterium is accumulated with concentrations up to about 1019 cm–3 at two different well pronounced local regions: (i) subsurface region with the width of about 0.5 μm and (ii) region‐around the projected range of He ions. As follows from TEM, X‐Ray and SIMS measurements, microstructure of nano‐structured spongy‐like layer and D concentration are dependent on HT, HP and processing time. It is established that further annealing of plasma treated Si:He,D at 723 K under 105 Pa/1.1 GPa for 1 h leads to a release of deuterium from both mentioned above local regions of the Si:He,D structures. It is concluded that spongy‐like buried layer created by He+ implantation can be used for gettering / accumulation of deuterium, which can be of interest for ion cut based technology. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Deuterium Accumulated In Plasma Treatedsupporting

confidence: 60%

“…The near surface D-enriched area is broader if compared to the case of as-implanted CzSi:He. This effect can be attributed to the evolution of deuterium -initiated defects upon anneals [20] and also to HP-induced gettering of impurities to the sample surface [21].…”

Section: Deuterium Accumulated In Plasma Treatedmentioning

confidence: 99%

Buried spongy‐like layers in silicon implanted with He⁺, annealed and treated in D⁺ plasma

Misiuk

Ulyashin

Barcz

et al. 2009

Phys. Status Solidi (c)

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“…11,[17][18][19][20] While many studies have focused on platelet formation in n-and p-type monocrystalline Si, very few have studied the influence of extended defects such as dislocations, stacking faults, and twins on hydrogen induced defect formation in mc silicon. Even fewer, if any, have studied hydrogen plasma treated, as-cut, mc material.…”

Section: Transmission Electron Microscopy Study Of Hydrogen Defect Fomentioning

confidence: 99%

Transmission electron microscopy study of hydrogen defect formation at extended defects in hydrogen plasma treated multicrystalline silicon

Nordmark

Holmestad

Walmsley

et al. 2009

Journal of Applied Physics

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Hydrogenation of multicrystalline silicon for solar cell applications is considered to be an effective method of increasing the lifetime by passivating defects and impurities. Hydrogen plasma treated as-cut and chemically etched multicrystalline silicon samples have been studied by electron microscopy in order to investigate hydrogen defect formation at extended bulk defects. In chemically etched samples, the texture of the surface after hydrogen plasma treatment differs between different grains depending on grain orientation. In as-cut samples, hydrogen induced defects are formed on sawing defects that extend up to ∼5 μm below the Si surface. Intragranular defects are also observed in the ∼1 μm subsurface region. The density of defects is higher in as-cut samples than in chemically etched samples and the size of the defects increases with depth. Hydrogen induced structural defects on bulk dislocations and on dislocations in twin grain boundaries and stacking faults are found several microns below the sample surface. It is concluded that (i) the passivation efficiency of multicrystalline silicon substrates after H plasma treatment can be limited by the formation of hydrogen induced structural defects and that (ii) such defects can be used to getter unwanted impurities upon high temperature processing of the Si wafers.

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“…1 This approach also meets certain technological difficulties. One of them is related to low solubility limit of H in Si ≤10 6 at/cm 3 at 400 o C. 2 At doping levels higher than this limit, structural defects can be formed, Si can lost its crystallinity, [3][4][5] and can be converted to hydrogenated amorphous (a) Si (a-Si:H).…”

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Similarity of electronic structure and optical properties of Mg ₂ NiH ₄ and Si

Karazhanov

Ulyashin

2008

Europhys. Lett.

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Using the first-principles calculations a comparative analysis of electronic structure and optical properties of crystalline Si with cubic Mg 2 NiH4 and monoclinic Mg 2 NiH4 has been performed. It is found that the band structure of cubic Mg 2 NiH3 is similar to that of crystalline Si (c-Si), whereas the band gap of monoclinic Mg 2 NiH4 is similar to that of the hydrogenated amorphous Si (a-Si:H). It is shown that cubic Mg 2 NiH4 possesses the features of semiconductors such as wide fundamental band gap, capability for nand/or p-type electrical conductivity, and small carrier effective masses. It is concluded that Mg 2 NiH4 can be considered as a candidate, which is capable to replace c-Si and a-Si:H. It might be useful for the processing of electronic devices such as, e.g., solar cells at low temperatures. Advantages of using hydrides in semiconductor electronics are discussed.

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Evolution of hydrogen induced defects during annealing of plasma treated Czochralski silicon

Cited by 15 publications

References 10 publications

Buried spongy‐like layers in silicon implanted with He⁺, annealed and treated in D⁺ plasma

Buried spongy‐like layers in silicon implanted with He⁺, annealed and treated in D⁺ plasma

Transmission electron microscopy study of hydrogen defect formation at extended defects in hydrogen plasma treated multicrystalline silicon

Similarity of electronic structure and optical properties of Mg ₂ NiH ₄ and Si

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Evolution of hydrogen induced defects during annealing of plasma treated Czochralski silicon

Cited by 15 publications

References 10 publications

Buried spongy‐like layers in silicon implanted with He+, annealed and treated in D+ plasma

Buried spongy‐like layers in silicon implanted with He+, annealed and treated in D+ plasma

Transmission electron microscopy study of hydrogen defect formation at extended defects in hydrogen plasma treated multicrystalline silicon

Similarity of electronic structure and optical properties of Mg 2 NiH 4 and Si

Contact Info

Product

Resources

About

Buried spongy‐like layers in silicon implanted with He⁺, annealed and treated in D⁺ plasma

Buried spongy‐like layers in silicon implanted with He⁺, annealed and treated in D⁺ plasma

Similarity of electronic structure and optical properties of Mg ₂ NiH ₄ and Si