Evolution of Ga droplets into GaSb quantum rings

Kunrugsa, Maetee; Prongjit, Patchareewan; Khoklang, Kamonchanok; Panyakeow, Somsak; Ratanathammaphan, Somchai

doi:10.1109/iconn.2014.6965255

Cited by 3 publications

(29 citation statements)

References 12 publications

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“…Each QRDS consists of the QR and QD parts, as illustrated in figure 1(a). The transformation from a part of QR lobe to a QD is attributed to the relaxation of compressive strain induced by a lattice mismatch between GaSb and GaAs [27]. Morphological analysis of the QRDSs shows a bimodal height distribution and is in agreement with PL spectrum which exhibits two peaks in the QRDS emission band [27].…”

Section: Introductionsupporting

confidence: 74%

“…The transformation from a part of QR lobe to a QD is attributed to the relaxation of compressive strain induced by a lattice mismatch between GaSb and GaAs [27]. Morphological analysis of the QRDSs shows a bimodal height distribution and is in agreement with PL spectrum which exhibits two peaks in the QRDS emission band [27]. It can be deduced from such experimental results that the QR and QD parts have their own energy levels.…”

Section: Introductionsupporting

confidence: 72%

“…From the fabrication point of view, droplet epitaxy is a growth technique that offers a high degree of freedom to engineer the morphology of self-assembled NSs in comparison with the Stranski-Krastanov (SK) method [23]. Droplet epitaxy can fabricate various kinds of the GaSb/GaAs NSs by tailoring the growth conditions [24][25][26][27]. Understanding of the optical properties and carrier dynamics is essential for the development of NS-based optoelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

“…GaSb/GaAs quantum-ring-with-dot structures (QRDSs) are unusual NSs grown by droplet epitaxy [27]. Each QRDS consists of the QR and QD parts, as illustrated in figure 1(a).…”

Section: Introductionmentioning

confidence: 99%

“…To our knowledge, the quantitative description of carrier dynamics in the GaSb/GaAs QRDSs has never been reported. Furthermore, temperature-dependent PL spectra are only the experimental results in literature [27] which can be used to manifest the carrier dynamics. According to the type-II band alignment in the GaSb/GaAs NSs, the dynamics of holes play important roles in determining the PL behaviors [7,8,36].…”

Section: Introductionmentioning

confidence: 99%

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Quantitative description of carrier dynamics in GaSb/GaAs quantum-ring-with-dot structures

Kunrugsa¹

2021

J. Phys. D: Appl. Phys.

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Self-assembled GaSb/GaAs quantum-ring-with-dot structures (QRDSs) are the nanostructures exhibiting type-II band alignment. Each QRDS consists of both quantum ring (QR) and quantum dot (QD) parts which have their own energy levels. In this work, the carrier dynamics in the GaSb/GaAs QRDSs are explored and quantitatively described by a rate equation model which is developed from experimental photoluminescence (PL) spectra in literature. The model is comprised of the carrier transition rates and activation energies involved the transfer processes of thermal-excited carriers. The difference between the QR and QD PL intensities is also taken into account in the model. Electronic structures of a single QRDS are calculated in order to determine the overlap between electron and hole wave functions that can be used for estimating the radiative transition rates. Numerical values of the radiative and non-radiative transition rates, carrier capture and escape rates, and activation energies are presented. The PL spectra obtained from the model are consistent with the reported experimental data.

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Section: Introductionsupporting

confidence: 74%

Section: Introductionsupporting

confidence: 72%

Section: Introductionmentioning

confidence: 99%

“…GaSb/GaAs quantum-ring-with-dot structures (QRDSs) are unusual NSs grown by droplet epitaxy [27]. Each QRDS consists of the QR and QD parts, as illustrated in figure 1(a).…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Quantitative description of carrier dynamics in GaSb/GaAs quantum-ring-with-dot structures

Kunrugsa¹

2021

J. Phys. D: Appl. Phys.

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Effect of Ga deposition rates on GaSb nanostructures grown by droplet epitaxy

Kunrugsa

Kiravittaya

Panyakeow

et al. 2014

Journal of Crystal Growth

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Optical absorption spectra of GaSb/GaAs quantum-ring-with-dot structures and their potential for intermediate band solar cells

Kunrugsa

2023

J. Phys. D: Appl. Phys.

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Optical absorption spectra of GaSb/GaAs quantum ring-with-dot structures (QRDSs) are calculated by the Fermi’s golden rule which the electronic states involved the optical transitions are obtained from the eight-band k · p method. The absorption spectra of multi-stacked QRDS layers show the interband and intraband transitions that are favorable to intermediate band solar cells (IBSCs). A drift-diffusion model with rate equations for a solar cell containing multi-stacked QRDS layers is formulated according to the absorption spectra. The external quantum efficiency (EQE) determined by the model with the AM1.5 solar spectrum and additional infrared light demonstrates that the confined hole states in the quantum ring (QR) parts of the QRDSs effectively function as an intermediate band. More efficient two-step photon absorption indicated by the enhancement of EQE also suggests the potential of QRDSs for the IBSCs.

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Evolution of Ga droplets into GaSb quantum rings

Cited by 3 publications

References 12 publications

Quantitative description of carrier dynamics in GaSb/GaAs quantum-ring-with-dot structures

Quantitative description of carrier dynamics in GaSb/GaAs quantum-ring-with-dot structures

Effect of Ga deposition rates on GaSb nanostructures grown by droplet epitaxy

Optical absorption spectra of GaSb/GaAs quantum-ring-with-dot structures and their potential for intermediate band solar cells

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