Evolution of Frenkel defect pairs in β-Ga2O3 thin film with the introduction of oxygen and its application in GaN-based ultraviolet light-emitting diode

Ultra-violet and yellow-green emissions under intriguing bidirectional DC driving based on Au/i-Ga2O3/n-GaN MIS heterojunction light-emitting diodes

“…The carrier activation energy ( E a ) of the LED was obtained by the function relationship between ln I 0 and 1/ kT . According to the Arrhenius-type hypothesis, 20 the value can be obtained by linear fitting using the following formula:where T M is the Kelvin temperature, I 0 is the extrapolated value of T M → ∞, and the value of E a obtained by linear fitting in the range of 293–373 K is about 0.62 eV. To explore the affection of temperature on the electrical properties of the Au/i-Ga 2 O 3 /n-GaN LED in detail, the semi-logarithmic I – V curve is depicted in Fig.…”

“…Coincidentally, Ga 2 O 3 films prepared by radio frequency magnetron sputtering (RFMS) usually have high resistance, so we turn our attention to the preparation of MIS structure devices. 20 MIS structures have the advantages of high cost-effectiveness, simple process and good process reproducibility. Moreover, the MIS devices contain a lower leakage current and a smaller Richardson constant, 21 owing to the larger barrier height generated at the metal–semiconductor interface.…”

Performance Enhancement of ZnGa2O4 Metal Oxide-Semiconductor Field-Effect Transistors Grown via Metal Organic Chemical Vapor Deposition on Sapphire Substrates

“…Wide-bandgap oxide materials have emerged as key components in the pursuit of high-performance electronic devices, capturing significant interest in both academia and industry. The utilization of wide-bandgap oxide materials in metal oxide-semiconductor field-effect transistors (MOSFETs) offers distinct advantages, such as improved power efficiency, higher breakdown voltages, and enhanced thermal stability. − Wide-bandgap oxide-based MOSFETs hold the promise of improving device performance and efficiency in the realm of power electronics, high-frequency communication systems, emerging technologies like the Internet of Things (IoT), and wearable devices,. − Wide-bandgap oxides, including but not limited to materials such as zinc oxide (ZnO), gallium oxide (Ga 2 O 3 ), and zinc gallate (ZnGa 2 O 4 ), present unique opportunities for MOSFET development. − Although zinc gallate (ZnGa 2 O 4 ) and gallium oxide (Ga 2 O 3 ) are both promising materials for MOSFET applications, they have different advantages due to their distinct material properties. The key advantages of ZnGa 2 O 4 over Ga 2 O 3 for MOSFET applications include a higher band gap of 4.4–5.2 eV, better thermal stability, potentially higher electron mobility, superior radiation hardness, and better thermal conductivity .…”