Evolution of extended defects in polycrystalline UO2 under heavy ion irradiation: combined TEM, XRD and Raman study

Onofri, C.; Sabathier, C.; Palancher, H.; Carlot, G.; Miro, S.; Serruys, Y.; Desgranges, Lionel; Legros, Marc

doi:10.1016/j.nimb.2015.08.091

Cited by 38 publications

(26 citation statements)

References 24 publications

(24 reference statements)

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“…2) increase of defect massif area up to 6 times higher than for the virgin one after an irradiation fluence of 3.10 16 Kr.cm -2 (i.e. 90 dpa) then a saturation is reached for higher fluences [21]. This ratio difference is closed to the one obtained in our study (around 5 times compared to the virgin samples).…”

Section: Discussioncontrasting

confidence: 44%

Effect of ballistic damage in UO2 samples under ion beam irradiations studied by in situ Raman spectroscopy

Gutierrez

Onofri

Miro

et al. 2018

Nuclear Instruments and Methods in Physics Research Section B:

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The damage induced in uranium dioxide (UO 2) during ion irradiation at low energy was studied by micro-Raman spectroscopy. Polycrystalline UO 2 samples were irradiated by 0.9-MeV I, 2-MeV Au at 25°C and by 4-MeV Kr ions at-160°C in a wide range of fluence. In situ Raman measurements reveal similar spectra evolution no matter the ion beam used. The T 2g band centred at 445 cm-1 related to the fluorine structure reveals a broadening with the irradiation damage increase. In addition, several bands ranging from 500 to 700 cm-1 , which are attributed to sub-or sur-stoichiometric structural defects, are observed at the first time of irradiation. Their intensities rise up with the irradiation fluence increase to a similar asymptotic relative values for all the irradiation conditions. The obtained Raman kinetics are compared with data from the literature on the microstructure evolution observed by Transmission Electronic Microscopy (TEM) and on the fraction of displaced atoms determined by Rutherford Backscattering Spectroscopy in channelling mode (RBS-C).

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Section: Discussioncontrasting

confidence: 44%

Effect of ballistic damage in UO2 samples under ion beam irradiations studied by in situ Raman spectroscopy

Gutierrez

Onofri

Miro

et al. 2018

Nuclear Instruments and Methods in Physics Research Section B:

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“…The intensity of the defect peaks increases as a function of electron energy and is consistent with the increase defects concentration in the UO 2 samples. However, the intensity increase observed in this study is less prominent compared to data reported for alpha and heavy-ion irradiation [10,11,25]. Though the Raman defect bands appear clearly for the 2.5 MeV irradiated disk, it is difficult to estimate the electron energy threshold for the defect peaks from Figure 1.…”

Section: Raman Spectra Analysiscontrasting

confidence: 89%

“…Figure 1 shows that electron irradiation induces the apparition of the Raman triplet defect bands in the 500-700 cm -1 spectral range, denoted by U1 (~532 cm -1 ), U2 (~574 cm -1 ) and U3 (~636 cm -1 ). First of all, these spectra look rather similar to those previously obtained under ionic irradiation [10,11]. The T 2g mode looks only slightly affected and the three defect lines occur.…”

Section: Raman Spectra Analysissupporting

confidence: 84%

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Quantification of irradiation-induced defects in UO2 using Raman and positron annihilation spectroscopies

et al. 2019

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Quantification of irradiation-induced defects IN UO 2 using Raman and positron annihilation spectroscopies, Acta Materialia (2018), doi: https:// AbstractIn UO 2 , Raman spectroscopy has recently put into evidence the existence of a specific signature, referred to as the triplet defect bands, which is characteristic to irradiation damages. In this work, we perform a detailed experimental analysis to investigate how this Raman signature can be used to characterize irradiated nuclear fuels. For this purpose, an electron irradiation experiment of sintered UO 2 disks coupled with ex situ Raman and positron annihilation spectroscopy measurements were carried out. The obtained findings showed that the Raman defect bands take their origin from the ballistic collisions of the incident electrons with the U and O atoms and are due to the formation of point defects. These defects induce the re-arrangement of UO 2 lattice atoms and give rise to domains with symmetry lower than Fm-3m with the loss of one or more symmetry elements, such as translational symmetry, centering F, mirror or rotational symmetry operations.

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“…they are made a large domains with a slight (below 1°) misorientation. If the interest of the work is demonstrated by the analysis of 1D XRD patterns, the analysis of the full reciprocal space scattering (2D 32 an ultimately 3D) should be very helpful for determining the size of extended defects in polycrystals implanted in severe conditions (high energy ions 33 and/or high damage values 34 ). Finally this work can be considered as first step towards the use of coherent X-ray diffraction to characterize strains in ion implanted polycrystals 35 .…”

Section: Main Partmentioning

confidence: 99%

Strain profiles in ion implanted ceramic polycrystals: An approach based on reciprocal-space crystal selection

Palancher

Goudeau

Boulle

et al. 2016

Applied Physics Letters

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The determination of the state of strain in implanted materials is a key issue in the study of their mechanical stability. Whereas this question is relatively easily solved in the case of single crystals, it remains a challenging task in the case of polycrystalline materials. In this paper, we take benefit of the intense and parallel beams provided by third generation synchrotron sources combined with a two-dimensional detection system to analyze individual grains in polycrystals, hence obtaining "single crystal-like" data. The feasibility of the approach is demonstrated with implanted UO 2 polycrystals where the in-depth strain profile is extracted for individual grains using numerical simulations of the diffracted signal. The influence of the implantation dose is precisely analyzed for several diffracting planes and grains. It is shown that, at low fluences, the development of strain is mainly

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Evolution of extended defects in polycrystalline UO2 under heavy ion irradiation: combined TEM, XRD and Raman study

Cited by 38 publications

References 24 publications

Effect of ballistic damage in UO2 samples under ion beam irradiations studied by in situ Raman spectroscopy

Effect of ballistic damage in UO2 samples under ion beam irradiations studied by in situ Raman spectroscopy

Quantification of irradiation-induced defects in UO2 using Raman and positron annihilation spectroscopies

Strain profiles in ion implanted ceramic polycrystals: An approach based on reciprocal-space crystal selection

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