Evolution of electronically active defects during the formation of interface monitored by combined surface photovoltage and spectroscopic ellipsometry measurements

Henrion, W.; Rebien, M.; Kliefoth, K.; Fischer, Daniel; Zettler, J.‐T.

doi:10.1016/s0167-9317(97)00012-9

Cited by 12 publications

(3 citation statements)

References 8 publications

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“…It has been pointed out that PEDOT:PSS easily takes up water because of the hygroscopic behavior of PSS. , Although a large fraction of PSS was removed by the DMSO post-treatment, it is still very likely that the polymer takes up some water during processing under ambient conditions. As water on the silicon surface steadily leads to further oxidation of the silicon surface with time, this could explain that even if stored in nitrogen, the silicon surface is not stable and continues to oxidize. This shows that for long-term stable hybrid n-Si/PEDOT:PSS solar cells, in addition to a proper encapsulation of the polymer itself, also a stable interface has to be ensured.…”

Section: Results and Discussionmentioning

confidence: 99%

Unveiling the Hybrid n-Si/PEDOT:PSS Interface

Jäckle

Liebhaber

Niederhausen

et al. 2016

ACS Appl. Mater. Interfaces

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Section: Results and Discussionmentioning

confidence: 99%

Unveiling the Hybrid n-Si/PEDOT:PSS Interface

Jäckle

Liebhaber

Niederhausen

et al. 2016

ACS Appl. Mater. Interfaces

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“…Under these conditions, a 1.5 nm thick oxide is expected to be formed on the ͕111͖ silicon surfaces. 37 The deoxidation is performed by dipping the sample for 10 s in a 3% HF acid solution at 20°C so as to remove the oxide and is followed by a rinsing in DI water at 20°C. Such a HF solution is expected to etch the silicon dioxide at a rate of 0.3 nm/s at room temperature ͑20°C͒.…”

Section: Width Reduction: Oxidationõdeoxidation Cyclesmentioning

confidence: 99%

Silicon nanowires with sub 10 nm lateral dimensions: From atomic force microscope lithography based fabrication to electrical measurements

Legrand

Deresmes

Stiévenard

2002

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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The ability of the atomic force microscope ͑AFM͒ to realize lithography patterns on silicon surfaces is widely known and leads to the formation of silicon nanostructures after an etching step. In this article, we aim at improving the fabrication process to yield silicon nanowires with minimum lateral dimensions for the realization of Coulomb blockade based devices. First, we focus on the AFM lithography step: using pulsed voltages for the anodic oxidation of the silicon surface instead of the commonly employed continuous polarization, we obtain an improvement of both AFM lithography resolution and tip reliability. Second, after the wet etching step, we present a technique of oxidation/ deoxidation cycles, which allows a controlled thinning of the silicon wires. Combining these two techniques, we obtain silicon nanowires the widths of which are lower than 10 nm. Finally, as the wires are made on a silicon on insulator substrate, it opens the way to electrical characterization and we present some realizations and results.

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“…Usually the surface is oxidized in a H 2 SO 4 /H 2 O 2 solution prior to the final NH 4 F etching. In our new procedure the wet-chemical oxide is prepared in deionized water at 80 C [20]. On these samples the largest he 2 i(E 2 ) value of 47.2 (curve 1 in Fig.…”

Section: Surface Roughness and Surface State Density Of H-terminated mentioning

confidence: 99%

Application of UV-VIS and FTIR Spectroscopic Ellipsometry to the Characterization of Wet-Chemically Treated Si Surfaces

Henrion¹,

Röseler

Rebien

1999

phys. stat. sol. (a)

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In this paper, investigations of roughness, oxide and hydrogen coverage of Si(111) surfaces after various wet‐chemical treatments using spectroscopic ellipsometry (SE) both in the ultraviolet/visible (UV‐VIS) and in the infrared (IR) spectroscopic region are reported. FTIR SE measurements yielded detailed information on the Si–H bonds on the surface of H‐terminated Si(111) wafers. The characteristic structure in the IR ellipsometric spectra at 2083 cm—1 can be modeled by an anisotropic oscillator. A correlation is established between the morphological structure of the cleaned Si surface caused by chemical preparation and the resulting electronic surface properties monitored by additional surface photovoltage (SPV) measurements. The results of these systematic investigations have been successfully used for optimization of wet‐chemical preparation methods aimed at atomically flat H‐terminated Si(111) surfaces with very low surface state densities. Additionally, native oxide growth on initially H‐terminated Si(111) was correlated to the evolution of rechargeable interface states determined by SPV measurements.

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Evolution of electronically active defects during the formation of interface monitored by combined surface photovoltage and spectroscopic ellipsometry measurements

Cited by 12 publications

References 8 publications

Unveiling the Hybrid n-Si/PEDOT:PSS Interface

Unveiling the Hybrid n-Si/PEDOT:PSS Interface

Silicon nanowires with sub 10 nm lateral dimensions: From atomic force microscope lithography based fabrication to electrical measurements

Application of UV-VIS and FTIR Spectroscopic Ellipsometry to the Characterization of Wet-Chemically Treated Si Surfaces

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