Evolution of defects upon annealing in He-implanted 4H-SiC

Abstract

The strain induced by room temperature helium implantation into 4H-SiC below the threshold amorphization dose results from both point and He-related defects. When the helium concentration is lower than 0.5% the strain profile follows the point defect profile, whereas at higher concentrations the He ions have a dominant effect on the strain. Upon annealing, the near surface strain progressively relaxes up to 1500 °C while the maximum strain relaxation stops at a temperature where helium ions agglomerate into platelets. When the vacancies become mobile, the platelets evolve into bubble clusters that expel dislocation loops whose migration is enhanced by the strain.

XRD contribution to the study of Cs-implanted cubic zirconia

“…The profiles are normalized to the maximum elastic strain. Usually, it is found that the strain depth profile overlaps on one of the three above mentioned profiles [19][20][21]. Hence, as a starting point, the experimental damage profile (f D ), which is here found identical to the Cs distribution, and the theoretical nuclear energy loss profile (dE/dx) nucl , were taken as possible strain profiles.…”

The transformation balance between two types of structural defects in silica glass in ion-irradiation processes

“…Ion irradiation can induce a great amount of structural damage in crystalline materials, including point defect, defect cluster, dislocation and amorphization zones [1][2][3]. Irradiation-induced phase transformation and structural modification have been reported in many previous studies [4][5][6][7][8].…”

The Influence of High-Power Ion Beams and High-Intensity Short-Pulse Implantation of Ions on the Properties of Ceramic Silicon Carbide

“…Decrease of LS density from N(E F )=2. 4 [10]. The impact of  p on transport charge for values N(E F ) and   in band 1 is higher than in band 2 (figure4).…”

“…The study of the effect on the properties of RD in the ceramic SiC is difficult and leads to ambiguous results owing to its complex structural hierarchy and high content of impurities and biographical defects (BD). Improvement of electrical characteristics of the epitaxial layers of SiC in devices is achieved by the ion implantation and subsequent thermal annealing owing to an annihilation and redistribution of RD and modify of the structure of the material surface [4][5][6][7]. High-intensity short-pulse implantation (HISPI) of ions followed by heating of the surface layer provides simultaneous annealing of RD [8,9].…”

“…That stimulates study of the influence of the various kinds of radiation on the characteristics of SiC and of devices based on it [1][2][3]. SiC has a high chemical and mechanical resistance [3][4][5]. The band gap (BG) of SiC depending on the polytype varies in range 2.83-3.23 eV, and the threshold energy of defect formation it is 25-35 eV, that defines the high radiation resistance of the material.…”