Evolution of defects and their effect on photoluminescence and conducting properties of green-synthesized ZnS nanoparticles

Devi, B. Lalitha; Rao, K. Mohan; Kekuda, Dhananjaya; Ramananda, D.

doi:10.1007/s00339-018-2196-y

Cited by 16 publications

(6 citation statements)

References 36 publications

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“…The transition at 383 nm corresponds to the transition from I Zn to I S interstitial states. The same transition is observed by B. L. Devi et al, in their work 77 . The intensity of broad blue emission (473 nm) from the prepared ZnS NPs differed with changes in proportion.…”

Section: Methodssupporting

confidence: 86%

Defect engineering for enhanced optical and photocatalytic properties of ZnS nanoparticles synthesized by hydrothermal method

Jubeer,

Manthrammel,

Subha

et al. 2023

Sci Rep

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Defect engineering is a promising method for improving light harvesting in photocatalytic materials like Zinc sulphide (ZnS). By altering the S/Zn molar ratio during hydrothermal processes, Zn and S defects are successfully introduced into the ZnS crystal. The band structures can be modified by adding defects to the crystal structure of ZnS samples. During the treatment process, defects are formed on the surface. XRD and Raman studies are used for the confirmation of the crystallinity and phase formation of the samples. Using an X-ray peak pattern assessment based on the Debye Scherer model, the Williamson-Hall model, and the size strain plot, it was possible to study the influence of crystal defect on the structural characteristics of ZnS nanoparticles. The band gap (Eg) values were estimated using UV–Vis diffuse spectroscopy (UV–Vis DRS) and found that the Eg is reduced from 3.28 to 3.49 eV by altering the S/Zn molar ratio. Photoluminescence study (PL) shows these ZnS nanoparticles emit violet and blue radiations. In keeping with the results of XRD, TEM demonstrated the nanoscale of the prepared samples and exhibited a small agglomeration of homogenous nanoparticles. Scanning electron microscopy (SEM) was used to examine the surface morphology of the ZnS particles. Inductively Coupled Plasma Optical Emission Spectroscopy (ICP-OES) and X-ray photoelectron spectroscopy (XPS) were used to evaluate and validate the elemental composition. XPS results indicate the presence of defects on the prepared ZnS nanoparticles. For the investigation of vacancy-dependent catalytic activity under exposure to visible light, defective ZnS with different quantities of Zn and S voids are used as catalysts. The lowest S/Zn sample, ZnS0.67 and the highest S/Zn sample, ZnS3, show superior photocatalytic activity.

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Section: Methodssupporting

confidence: 86%

Defect engineering for enhanced optical and photocatalytic properties of ZnS nanoparticles synthesized by hydrothermal method

Jubeer,

Manthrammel,

Subha

et al. 2023

Sci Rep

View full text Add to dashboard Cite

show abstract

“…This can be explained using the Maxwell–Wagner model. As per this model, the high value of the dielectric might be due to the induced interfacial polarization caused by the larger grain boundary among the modest grain boundaries [46, 47]. The 5% Pr‐doped ZnS sample had the least ϵ′ value and 0.5% Pr‐doped ZnS had the maximum dielectric values among the prepared samples.…”

Section: Resultsmentioning

confidence: 99%

“…It was also noted that the peaks at 394, 425, and 437 nm were very weak or absent for the 2.5%Pr ZnS samples. The reason for emissions at ~360 and 380 nm were the transitions from the interstitial Zn [46]. The emission peak at 394 and 425 nm arose due to the optical activation of sulphur vacancies [50].…”

Section: Resultsmentioning

confidence: 99%

Microwave‐assisted synthesis of praseodymium (Pr)‐doped ZnS QDs such as nanoparticles for optoelectronic applications

et al. 2023

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Pr‐doped ZnS nanoparticles were synthesised using a low‐cost microwave assisted technique and investigations on their structure, morphology, optical properties, Raman resonance, dielectric properties and luminescence were conducted. Broad XRD peaks suggested the formation of low‐dimensional Pr‐doped ZnS nanoparticles with a cubic structure which was validated by TEM/HRTEM analysis. The energy gaps were identified using diffuse reflectance spectroscopy and it was found that the values varied between 3.54 and 3.61 for different samples. Vibrational experiments on Pr doped ZnS nanoparticles revealed significant Raman modes at ~ 270 and ~350 cm ‐1 associated to TO and LO modes that are shifted to lower wavenumbers, indicating phonon confinement in the synthesised products. The PL spectra of all samples demonstrate that the pure and Pr doped ZnS nanoparticles are three level laser active materials. EDX and mapping study confirms the homogeneous presence of Pr in ZnS. TEM study shows that the particles are of very small size and cubic phase. The samples have high dielectric constant values between 13 and 24 and low loss values, according to the dielectric analysis. With an increase in frequency and a change in the Pr content of ZnS, an intense peak can be seen in the PL spectra at a wavelength of 360 nm, and some other peaks observed correspond to the transition of Pr 3+. The produced NPs are appropriate for optoelectronic applications due to their short dimension, high energy gap, high dielectric constant and low loss values.

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“…Zinc vacancy (V Zn ), sulphur vacancy (V S ), interstitial Zinc (I Zn ), and interstitial Sulphur (I S ) are the typical Schottky defects that are frequently found in ZnS [ 12 ]. Figure 7 shows the PL spectra of undoped ZnS and Ti-doped ZnS nanoparticles doped at different concentrations.…”

Section: Resultsmentioning

confidence: 99%

“…ZnS nanoparticles can be considered the best host for adjusting the optimal band gap engineering for the electric applications of effective optoelectronic devices [ 10 , 11 ]. Various techniques including Microwave [ 12 ], Hydrothermal [ 13 ], solid state [ 14 ], and sol-gel [ 15 ] have been used to synthesize ZnS nanostructured materials. Nanostructured materials are characterized as materials comprising hundreds to thousands of atoms.…”

Section: Introductionmentioning

confidence: 99%

Modulating Charge Mobility in Microwave Synthesized Ti-doped ZnS Nanoparticles for Potential Photoanode Applications

Maswanganye¹,

Kabongo²,

Dhlamini³

2022

Nanomaterials

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Doping ZnS nanoparticles with different metal and/or non-metal ions is one of the ways to improve their properties. That is because dopants introduce strain into the lattice of the ZnS nanoparticles. The influence of Ti on the ZnS nanoparticles was investigated on the structural properties, optical properties, and also electrical impedance spectroscopy (EIS). The presence of Ti in the crystal lattice of the ZnS introduced strain into the crystal structure, hence causing a lattice expansion and reducing the crystallite sizes of the ZnS nanoparticles. Ti doping was observed to increase the energy band gap of ZnS nanoparticles and also reduce the charge carrier recombination. Doping Ti into ZnS was observed to decrease the charge transfer resistance of ZnS nanoparticles with an increase in dopant concentration indicating an improved charge transfer mobility owing to the presence of strain in the crystal lattice.

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Evolution of defects and their effect on photoluminescence and conducting properties of green-synthesized ZnS nanoparticles

Cited by 16 publications

References 36 publications

Defect engineering for enhanced optical and photocatalytic properties of ZnS nanoparticles synthesized by hydrothermal method

Defect engineering for enhanced optical and photocatalytic properties of ZnS nanoparticles synthesized by hydrothermal method

Microwave‐assisted synthesis of praseodymium (Pr)‐doped ZnS QDs such as nanoparticles for optoelectronic applications

Modulating Charge Mobility in Microwave Synthesized Ti-doped ZnS Nanoparticles for Potential Photoanode Applications

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