Evolution of a dense interlayer in a-SiNx:H thin films under 100 MeV Ni7+ ion irradiation

Bommali, R. K.; Ghosh, Saswath; Srivastava, Pankaj

doi:10.1063/1.4980548

Cited by 2 publications

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“…Compositions of films R and G, from our past publication are also depicted for comparison of the initial hydrogen content and resulting percentage compaction (∆ t %) after irradiation. It must be noted that the compactions have been only determined after the irradiation at 1 × 10 14 as the compaction after the low fluence irradiation of 5 × 10 12 ions/cm 2 is insignificant 17 .…”

Section: Resultsmentioning

confidence: 99%

Evolution of ion track morphology in a-SiNx:H by dynamic electronic energy loss

Bommali,

Ghosh,

Gupta

et al. 2020

Preprint

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Amorphous hydrogenated silicon nitride (a-SiN x :H) thin films irradiated with 100 MeV Ni 7+ results in the formation of continuous ion track structures at the lower fluence of 5 × 10 12 ions/cm 2 whereas at higher fluence of 1 × 10 14 ions/cm 2 the track structures fragment into discontinuous ion track like structures . The observation of the discontinuous ion track like structures at the high fluence of 1 × 10 14 ions/cm 2 shows clearly that higher fluence irradiation may not always lead to dissolution of the microstructure formed at lower fluence. The results are understood on the basis of a dynamic electronic energy loss (S e ) in the course of irradiation resulting from the out-diffusion of hydrogen from the films and a continuous increase in density of a-SiN x :H films

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Section: Resultsmentioning

confidence: 99%

Evolution of ion track morphology in a-SiNx:H by dynamic electronic energy loss

Bommali,

Ghosh,

Gupta

et al. 2020

Preprint

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Hydrogen loss and its improved retention in hydrogen plasma treated a-SiN :H films: ERDA study with 100 MeV Ag7+ ions

Bommali

Ghosh

Khan

et al. 2018

Nuclear Instruments and Methods in Physics Research Section B:

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Hydrogen loss from a-SiNx:H films under irradiation with 100 MeV Ag 7+ ions using elastic recoil detection analysis (ERDA) experiments is reported. The results are explained under the basic assumptions of the molecular recombination model. The ERDA hydrogen counts are composed of two distinct hydrogen desorption processes, limited by rapid molecular diffusion in the initial stages of irradiation, and as the fluence progresses a slow process limited by diffusion of atomic hydrogen takes over. Which of the aforesaid processes dominates, is determined by the continuously evolving Hydrogen concentration within the films. The ERDA measurements were also carried out for films treated with low temperature (300ºC) hydrogen plasma annealing (HPA). The HPA treated films show an improved diffusion of atomic hydrogen, resulting from healing of weak bonds and passivation of dangling bonds. Further, upon HPA, films also show evolution of hydrogen with significantly higher counts, at advanced fluences, relative to the as-deposited films. These results indicate the potential of HPA towards improved H retention in a-SiNx:H films. The study distinguishes clearly the presence of two diffusion processes in a-SiNx:H whose diffusion rates differ by an order of magnitude, with hydrogen radicals not being able to diffuse beyond ~1 nm from the point of their creation. The results are very relevant for the passivation applications of a-SiNx:H.

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Evolution of a dense interlayer in a-SiNx:H thin films under 100 MeV Ni7+ ion irradiation

Cited by 2 publications

References 9 publications

Evolution of ion track morphology in a-SiNx:H by dynamic electronic energy loss

Evolution of ion track morphology in a-SiNx:H by dynamic electronic energy loss

Hydrogen loss and its improved retention in hydrogen plasma treated a-SiN :H films: ERDA study with 100 MeV Ag7+ ions

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Evolution of a dense interlayer in a-SiNx:H thin films under 100 MeV Ni7+ ion irradiation

Cited by 2 publications

References 9 publications

Evolution of ion track morphology in a-SiNx:H by dynamic electronic energy loss

Evolution of ion track morphology in a-SiNx:H by dynamic electronic energy loss

Hydrogen loss and its improved retention in hydrogen plasma treated a-SiN :H films: ERDA study with 100 MeV Ag7+ ions

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Hydrogen loss and its improved retention in hydrogen plasma treated a-SiN :H films: ERDA study with 100 MeV Ag7+ ions