Evolution and performance analysis of quantum well FinFET for 3 nm technology node with type-II strained tri-layered hetero-channel system
Swagat Nanda,
Rudra Sankar Dhar
Abstract:3D FinFETs are meticulously scaled down to sub-14 nm leading to reemerging undesirable characteristics namely increased Drain Induced Barrier Leakage (DIBL), higher subthreshold swing and excessive leakage currents. This inhibits the scaling of FinFETs and research suggests probable utilization of strained silicon technology in FinFETs to improve the on currents and transconductance of the nano devices. The emergence of quantum effects including velocity overshoot and carrier confinement severely affects the e… Show more
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