Evidences of defect contribution in magnetically ordered Sm-implanted GaN

Ferromagnetic and paramagnetic magnetization of implanted GaN:Ho,Tb,Sm,Tm films

“…[8][9][10] Starting from these works and following our earlier contributions, 2,3 we performed the study of the FM and paramagnetic (PM) magnetization of the implanted GaN:Ho, Sm, Tb, Tm layers. To our knowledge, the magnetic properties of these films with exception of GaN:Tb 11 and GaN:Sm 5 have not yet been studied and in most cases the measurements were not performed in the low temperature region. In our case, the magnetic moment measurements were supplemented by the electron paramagnetic resonance (EPR) study of the sapphire substrate with the aim to obtain information on PM impurities in the sapphire and GaN/sapphire films.…”