2007
DOI: 10.1016/j.microrel.2006.05.018
|View full text |Cite
|
Sign up to set email alerts
|

Evidence that N2O is a stronger oxidizing agent than O2 for both Ta2O5 and bare Si below 1000°C and temperature for minimum low-K interfacial oxide for high-K dielectric on Si

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2
1

Citation Types

0
14
0

Year Published

2012
2012
2020
2020

Publication Types

Select...
6

Relationship

0
6

Authors

Journals

citations
Cited by 10 publications
(14 citation statements)
references
References 23 publications
0
14
0
Order By: Relevance
“…It is well documented that N 2 O is a strong oxidizing reagent, similar to hydrogen peroxide, and much stronger than oxygen gas. 30 Thus, the minimization of N 2 O formation during the reaction will be a key factor for the safe preparation of DAZD.…”
Section: ■ Results and Discussionmentioning
confidence: 99%
See 1 more Smart Citation
“…It is well documented that N 2 O is a strong oxidizing reagent, similar to hydrogen peroxide, and much stronger than oxygen gas. 30 Thus, the minimization of N 2 O formation during the reaction will be a key factor for the safe preparation of DAZD.…”
Section: ■ Results and Discussionmentioning
confidence: 99%
“…While venting the gas at the end of the reaction, the methanol vapor and nitrous oxide rushing through the Teflon-lined tubing created optimal conditions to create brush static electricity of sufficient energy to ignite the highly combustible vapor. It is well documented that N 2 O is a strong oxidizing reagent, similar to hydrogen peroxide, and much stronger than oxygen gas . Thus, the minimization of N 2 O formation during the reaction will be a key factor for the safe preparation of DAZD.…”
Section: Results and Discussionmentioning
confidence: 99%
“…These were performed for all fluids considered in the core flooding experiments with the exception of N2O which was found to be incompatible with the gravimetric sorption analyser possibly on account of it being a strong oxidizer. 53 All adsorption measurements were conducted at a temperature of 20 °C with pressure decreasing in steps from 100 bar to 0.1 bar. An equilibration time of between 30 and 60 minutes was allowed after a change in pressure.…”
Section: Methodsmentioning
confidence: 99%
“…The selection of an appropriate ambient during dry thermal oxidation is suggested to be an important factor in affecting the oxide growth rate. Since nitrous oxide gas (N 2 O) is believed to be a stronger oxidizing agent than oxygen [57], utilization of the gas during dry thermal oxidation is expected to improve the oxide growth rate. Besides, the N 2 O gas can be decomposed and formed into nitrogen, oxygen and other related compound [57,58], in which thermal oxidation and nitridation is taking place simultaneously [59].…”
Section: Introductionmentioning
confidence: 99%
“…Since nitrous oxide gas (N 2 O) is believed to be a stronger oxidizing agent than oxygen [57], utilization of the gas during dry thermal oxidation is expected to improve the oxide growth rate. Besides, the N 2 O gas can be decomposed and formed into nitrogen, oxygen and other related compound [57,58], in which thermal oxidation and nitridation is taking place simultaneously [59]. In the second place, the applied N 2 O on the growth of thermally nitrided SiO 2 has been considered as an essential gate oxide for SiC MOS structure.…”
Section: Introductionmentioning
confidence: 99%