Evidence of two distinct degradation mechanisms from temperature dependence of negative bias stressing of the ultrathin gate p-MOSFET

Ang, Diing Shenp; Wang, S.; Ling, C.H.

doi:10.1109/led.2005.859673

Cited by 42 publications

(15 citation statements)

References 10 publications

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“…The fact that the R component remains constant while the P component increases substantially under nominal NBTI oxide field implies that the two have different origins. This inference is in accordance to earlier temperature dependence study of the SiO 2 and SiON p-MOSFETs, showing different activation energies for the R and P components [3], [20], [21]. The latter is generally ascribed to Si dangling bond defects or the P b centers [22].…”

Section: Xt82 Irps11-936supporting

confidence: 92%

On the evolution of the recoverable component of the SiON, HfSiON and HfO<inf>2</inf> P-MOSFETs under dynamic NBTI

Gao

Boo

Teo

et al. 2011

2011 International Reliability Physics Symposium

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The evolution of the recoverable (R) component of negative-bias temperature instability (NBTI) is examined, as a function of the number of stress and relaxation cycles, for the SiON, HfSiON, and HfO 2 p-MOSFETs. At typical NBTI oxide fields (~7 MV/cm), a steady and substantial decrease of the R component in the case of the HfO 2 p-MOSFET is observed, while the R component of the SiON and HfSiON p-MOSFETs are found to remain constant. A decrease in the R component of the SiON and HfSiON p-MOSFETs is observed only at much higher oxide fields (> 10 MV/cm). Evidence shows that the decrease in the R component is due to a greater tendency for the hole traps in the HfO 2 to be transformed into a permanent form (P) under a given oxide field. The result therefore implies that, under typical NBTI oxide fields, the R and P components could share a common defect origin in the case of the HfO 2 p-MOSFET. On the other hand, the R and P components are likely to have originated from different defect precursors in the case of the SiON and HfSiON p-MOSFETs. The existence of different oxide fields at which the transformation of the R component into a permanent form occurs for different gate dielectrics implies that the nature of the defect precursors responsible for the R component is intrinsic to the gate dielectric material.

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Section: Xt82 Irps11-936supporting

confidence: 92%

On the evolution of the recoverable component of the SiON, HfSiON and HfO<inf>2</inf> P-MOSFETs under dynamic NBTI

Gao

Boo

Teo

et al. 2011

2011 International Reliability Physics Symposium

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“…By virtue of the linear V g s dependence, this degradation component plays an integral role in the NBTI of p-MOSFETs across typical gate stress voltage and stress time ranges. The finding confirms that NBTI is determined by more than one degradation mechanism [6] and aids in understanding the current controversies of NBTI.…”

Section: Discussionsupporting

confidence: 72%

Observation of two gate stress voltage dependence of NBTI induced threshold voltage shift of ultra-thin oxynitride gate p-MOSFET

Teo

Ang

2009

2009 IEEE International Reliability Physics Symposium

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Ultra-fast measurement of NBTI induced threshold voltage shift (|ΔV t |) reveals two |ΔV t | components that exhibit different dependence on the stress time and the gate stress voltage V g s . One component is spontaneously generated upon stress, i.e. fast generation, and the amount generated saturates within the first few seconds of stress. The saturation level is observed to scale linearly with V g s . The second component increases steadily with stress time, i.e. it exhibits a relatively slow generation rate; its stress time dependence may be described by a power-law with exponent n asymptotically approaching ~0.167 at steady state. This component exhibits an exponential/power-law dependence on V g s . Index Terms -negative bias temperature instability (NBTI), ultrafast switching (UFS), threshold voltage I. INTRODUCTIONFast generation and recovery of NBTI induced oxide and interface defects [1] render precise measurement of device degradation very challenging. Though present fast methods significantly minimize measurement induced recovery, they have a wide variation in delay (~10 −6 -10 −3 s). Stress induced degradation of the drain current is typically measured at a relatively large gate voltage and the result is converted to an equivalent |ΔV t | using an I-V model. The accuracy of conversion is limited by the model used and unknown errors [2] (e.g. the effect of stress on mobility, which itself is a function of gate voltage, is not well characterized). Because of these practical difficulties, the exact gate voltage dependence of NBTI induced degradation remains unclear. In this work, we employ an ultra-fast switching (UFS) method [3] for NBTI characterization. The method is readily implemented using a standard parametric tester; it has a very short measurement delay (≤ 100 ns) and a good measurement resolution (~1 µA). These attributes enable the sub-threshold I-V of the transistor to be precisely measured at minimal delay, and |ΔV t | directly determined from the relatively shift in the I-V curves. Through this method, new observations on the gate voltage dependence of NBTI are revealed.

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“…However, one may also encounter the weak electron-phonon regime when defect behavior in other reliability issues is addressed. In this regime, the dominant transition is hole emission into one of the band states and the integration over the whole valence band as in the equations [1] and [2] must be carried out.…”

Section: Multi-state Multi-phonon Modelmentioning

confidence: 99%

(Invited) Multiphonon Processes as the Origin of Reliability Issues

Goes

Toledano-Luque²,

Schanovsky

et al. 2013

ECS Trans.

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Recently, correlated drain and gate current fluctuations have been observed in nano-scaled MOSFETs, indicating that their occurrence is linked to the same defect. One explanation for this observation can be given by the multi-state defect model, which has been developed to describe the hole capture and emission processes involved in the bias temperature instability (BTI). This model relies on a combination of metastable defect states and nonradiative multi-phonon transitions. Our detailed investigations demonstrate that the observed gate current fluctuations and their correlation with the drain noise can be well reproduced using a TAT mechanism based on the multi-state model.

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Evidence of two distinct degradation mechanisms from temperature dependence of negative bias stressing of the ultrathin gate p-MOSFET

Cited by 42 publications

References 10 publications

On the evolution of the recoverable component of the SiON, HfSiON and HfO<inf>2</inf> P-MOSFETs under dynamic NBTI

On the evolution of the recoverable component of the SiON, HfSiON and HfO<inf>2</inf> P-MOSFETs under dynamic NBTI

Observation of two gate stress voltage dependence of NBTI induced threshold voltage shift of ultra-thin oxynitride gate p-MOSFET

(Invited) Multiphonon Processes as the Origin of Reliability Issues

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