Evidence of thermionic emission in forward biased <i>β</i>-Ga2O3 Schottky diodes at Boltzmann doping limit

Mukhopadhyay, Swarnav; Lyle, Luke A. M.; Pal, Hridibrata; Das, Kalyan Kumar; Porter, Lisa M.; Sarkar, Biplab

doi:10.1063/5.0068211

Cited by 13 publications

(9 citation statements)

References 72 publications

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“…We use the extracted device parameters as an indicator of damage introduction or removal. The Richardson's constant was calculated to be in the range [27][28][29] Even for a 5 kV exposure, the ideality factor increases beyond its original value, which is indicative of a strong contribution from other conduction mechanisms like defect-assisted tunneling and recombination.…”

Section: Resultsmentioning

confidence: 99%

Sidewall Electrical Damage in β-Ga₂O₃ Rectifiers Exposed to Ga⁺ Focused Ion Beams

Xia

Al-Mamun

Ren

et al. 2023

ECS J. Solid State Sci. Technol.

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The energy and beam current dependence of Ga+ focused ion beam milling damage on the sidewall of vertical rectifiers fabricated on n-type Ga2O3 was investigated with 5–30 kV ions and beam currents from 1.3-20 nA. The sidewall damage was introduced by etching a mesa along one edge of existing Ga2O3 rectifiers. We employed on-state resistance, forward and reverse leakage current, Schottky barrier height, and diode ideality factor from the vertical rectifiers as potential measures of the extent of the ion-induced sidewall damage. Rectifiers of different diameters were exposed to the ion beams and the “zero-area” parameters extracted by extrapolating to zero area and normalizing for milling depth. Forward currents degraded with exposure to any of our beam conductions, while reverse current was unaffected. On-state resistance was found to be most sensitive of the device parameters to Ga+ beam energy and current. Beam current was the most important parameter in creating sidewall damage. Use of subsequent lower beam energies and currents after an initial 30 kV mill sequence was able to reduce residual damage effects but not to the point of initial lower beam current exposures.

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Section: Resultsmentioning

confidence: 99%

Sidewall Electrical Damage in β-Ga₂O₃ Rectifiers Exposed to Ga⁺ Focused Ion Beams

Xia

Al-Mamun

Ren

et al. 2023

ECS J. Solid State Sci. Technol.

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“…Bulk β-Ga 2 O 3 single crystals are progressing fast to achieve commercial maturity because of the compatibility of β-Ga 2 O 3 films with low-cost growth techniques such as the Czochralski growth method [14,42]. To date, highly efficient kilovolt-class β-Ga 2 O 3 Schottky diodes [43,44] and P-N junction diodes [23,45] have already been reported in the literature. These reports used single crystalline Ga 2 O 3 substrates that are likely to offer better carrier mobility than the Ga 2 O 3 films grown on Si substrate in this work.…”

Section: Resultsmentioning

confidence: 99%

A self-powered and broadband UV PIN photodiode employing a NiOx layer and a β-Ga₂O₃ heterojunction

Vasquez

Ashai

et al. 2023

J. Phys. D: Appl. Phys.

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Crucial commercial and space applications require the detection of broadband ultraviolet (UV) rays spanning from UV-A to UV-C. In this study, the authors demonstrate a broadband UV photodetector employing a p-type NiOx layer and an n-type β-Ga2O3 heterostructure in PIN configuration for the first time. Simulations are conducted to optimize the doping concentration and thickness of the NiOx layer, ensuring that (a) a reasonable depletion width is maintained within the NiOx layer for UV-A and UV-B light absorption; (b) anode ohmic contacts are formed on the nondepleted NiOx film, and (c) >70% of the UV-C light is absorbed by β-Ga2O3. The optimized NiOx/ β-Ga2O3 PIN photodiode exhibits good responsivity to incident light wavelengths in the UV-A, UV-B, and UV-C regions. While the NiOx layer is considered to be responsible for providing good photoresponsivity in the UV-A and UV-B regions, a highly resistive (near-intrinsic) β-Ga2O3 layer is required for the absorption of incident UV-C light. A record detectivity of >1011 cmHz0.5W−1 for the UV-B and UV-C regions and >1010 cmHz0.5W−1 for the UV-A region is observed in the NiOx/ β-Ga2O3 heterostructure PIN photodiode during the self-powered operation. The results presented in this study are promising and instigate device design strategies for (ultra)wide bandgap semiconductor-based broadband UV PIN photodetectors.

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“…In contrast, φ B JV and φ B CV obtained for the Ni/β-Ga 2 O 3 contacts were in close agreement, with values of 1.21 and 1.25 eV, respectively. Differences between φ B JV and φ B CV are also generally attributed to spatial inhomogeneities of the Schottky barrier. − Additionally, the difference between φ B JV and φ B CV can also be attributed to different current transport mechanisms. For example, Wang et al attributed the difference for φ B JV and φ B CV in Au/GaN Schottky diodes to recombination via Ga vacancies left behind due to Ga diffusion into the Au overlayer .…”

Section: Discussionmentioning

confidence: 99%

Nanoscale Characterization of Chemical and Structural Properties of the Au/(100) β-Ga₂O₃ Interface

Lyle

House

Yang

et al. 2022

ACS Appl. Electron. Mater.

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Au/β-Ga2O3 Schottky contacts deposited at room temperature via electron-beam evaporation are characterized electrically with current density–voltage (J–V) and capacitance–voltage (C–V) measurements. The ideality factor and Schottky barrier heights measured from J–V and C–V are determined to be 1.32, 1.37 eV, and 1.98 eV, respectively. Due to the peculiarities of the electrical properties of the Au/β-Ga2O3 Schottky contacts, scanning transmission electron microscopy (STEM) was performed. High-angle annular dark-field (HAADF)-STEM imaging reveals an inhomogeneous chemical reaction occurred at the metal–semiconductor interface. The reaction is signified by void formation 5–20 nm below the interface, Ga diffusion into Au at the interface, and Ga interstitial diffusion toward the interface. Energy-dispersive X-ray spectroscopy (EDS) mapping shows Ga diffusion into the Au contact region accompanied by a transitional region of 4–5 nm.

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Evidence of thermionic emission in forward biased β-Ga2O3 Schottky diodes at Boltzmann doping limit

Cited by 13 publications

References 72 publications

Sidewall Electrical Damage in β-Ga₂O₃ Rectifiers Exposed to Ga⁺ Focused Ion Beams

Sidewall Electrical Damage in β-Ga₂O₃ Rectifiers Exposed to Ga⁺ Focused Ion Beams

A self-powered and broadband UV PIN photodiode employing a NiOx layer and a β-Ga₂O₃ heterojunction

Nanoscale Characterization of Chemical and Structural Properties of the Au/(100) β-Ga₂O₃ Interface

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Evidence of thermionic emission in forward biased β-Ga2O3 Schottky diodes at Boltzmann doping limit

Cited by 13 publications

References 72 publications

Sidewall Electrical Damage in β-Ga2O3 Rectifiers Exposed to Ga+ Focused Ion Beams

Sidewall Electrical Damage in β-Ga2O3 Rectifiers Exposed to Ga+ Focused Ion Beams

A self-powered and broadband UV PIN photodiode employing a NiOx layer and a β-Ga2O3 heterojunction

Nanoscale Characterization of Chemical and Structural Properties of the Au/(100) β-Ga2O3 Interface

Contact Info

Product

Resources

About

Sidewall Electrical Damage in β-Ga₂O₃ Rectifiers Exposed to Ga⁺ Focused Ion Beams

Sidewall Electrical Damage in β-Ga₂O₃ Rectifiers Exposed to Ga⁺ Focused Ion Beams

A self-powered and broadband UV PIN photodiode employing a NiOx layer and a β-Ga₂O₃ heterojunction

Nanoscale Characterization of Chemical and Structural Properties of the Au/(100) β-Ga₂O₃ Interface