Evidence of Piezoelectric Potential and Screening Effect in Single Highly Doped ZnO:Ga and ZnO:Al Nanowires by Advanced Scanning Probe Microscopy

Synhaivskyi, Oleksandr; Albertini, David F.; Gaffuri, Pierre; Chauveau, J.-M.; Consonni, Vincent; Gautier, Brice; Brémond, G.

doi:10.1021/acs.jpcc.1c00926

Cited by 15 publications

(12 citation statements)

References 64 publications

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“…It has been attributed to the higher residual doping obtained with ACG, with possibly an additional contribution of bending limitations due to the larger density of NWs on these ACG samples. More recently, this effect has been explored in a more quantitative way for ZnO NWs fabricated by chemical bath deposition (CBD) with different levels of Ga or Al doping using a combination of scanning spreading resistance microscopy and PFM in order to evaluate carrier concentration and piezoelectric response, respectively [17]. The PFM amplitude was divided by 2, from about 80 pm for non-intentionally Ga doped ZnO to about 40 pm for carrier concentrations above 2 × 10 19 cm −3 .…”

Section: Introductionmentioning

confidence: 99%

Length and polarity dependent saturation of the electromechanical response of piezoelectric semiconducting nanowires

Garcia

Mouis

Jalabert

et al. 2023

J. Phys. D: Appl. Phys.

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The question of the length dependence of the electromechanical response of semiconducting piezoelectric NWs was explored. We identified a new physical mechanism of piezoresponse saturation, which originates from the combination of the influence of interface traps and piezoelectric polarization in the depleted NW. Our results are in better qualitative agreement with experimental observations than presently existing theories. To do so, we used the Finite Element Method to simulate the coupled set of equations describing mechanical, piezoelectric and semiconducting properties. In order to reduce the number of parameters, simulations focused on the case of uniform ZnO nanowires grown along the c-axis. Saturation was explained by the incapacity of surface traps to maintain depletion along the whole NW beyond a certain length, as a result of the electric potential shift induced by piezoelectric polarization. An analytical model was developed to support this analysis. It provided the dependence trends of saturation length and piezoresponse as a function of NW dimensions, doping level, surface traps density and crystal polarity, as well as with external pressure, in fair agreement with simulation results. Moreover, we discovered that one consequence of this mechanism was that crystal polarity had an impact on the smoothness of the radius-dependent transition between high and low piezoresponse under axial stress. These results have important implications for the optimization of electromechanical sensors and nanogenerators based on piezoelectric semiconducting NWs and related composite materials.

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Section: Introductionmentioning

confidence: 99%

Length and polarity dependent saturation of the electromechanical response of piezoelectric semiconducting nanowires

Garcia

Mouis

Jalabert

et al. 2023

J. Phys. D: Appl. Phys.

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“…The high concentration of Al Zn and Ga Zn shallow donors due to their low formation energy [66,67] certainly explains their even higher free electron density as reported in Ref. [45]. However, a significant part of Al dopants is expected to lie on the interstitial sites [68].…”

Section: Spectroscopic Propertiesmentioning

confidence: 75%

“…The physicochemical processes at work following the addition of Al nitrate and Ga nitrate in the bath have been studied in detail, along with the CBD conditions required to favor the incorporation of dopants through attractive electrostatic interactions [42][43][44]. The doping control in ZnO NWs grown by CBD has thus offered recently a greater promise to precisely determine its effect on the performance of devices, in particular in the field of piezoelectric applications [45]. However, no investigation has been reported so far about the effect of the doping with Al and Ga using the approach in Refs.…”

Section: Introductionmentioning

confidence: 99%

Enhanced photocatalytic activity of chemically deposited ZnO nanowires using doping and annealing strategies for water remediation

Gaffuri

Dedova

Appert

et al. 2022

Applied Surface Science

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“…The incorporation of Al and Ga dopants into ZnO NWs has been found to operate in a narrow range of high pH values following attractive electrostatic forces between the anion complexes containing the dopant (i.e., Al(OH) 4 − and Ga-(OH) 4 − ) and the positively charged m-plane sidewalls. 21,22 The resulting free electron density in ZnO NWs has accordingly been shown to drastically increase following the doping with Al and Ga. 24 These studies have revealed that the implementation of the doping of ZnO NWs by CBD should be optimized for each dopant considered although some general thermodynamic considerations hold for all dopants. In that way, there could be an opportunity to obtain codoped ZnO NWs with Al and Ga by optimizing the conditions during the CBD process.…”

Section: Introductionmentioning

confidence: 99%

Interplay Effects in the Co-Doping of ZnO Nanowires with Al and Ga Using Chemical Bath Deposition

et al. 2023

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The simultaneous co-doping of ZnO nanowires grown by chemical bath deposition is of high interest for a large number of engineering devices, but the process conditions required and the resulting physicochemical processes are still largely unknown. Herein, we show that the simultaneous co-doping of ZnO nanowires with Al and Ga following the addition of Al(NO3)3 and Ga(NO3)3 in the chemical bath operates in a narrow range of conditions in the high-pH region, where the adsorption processes of respective Al(OH)4 – and Ga(OH4)− complexes on the positively charged m-plane sidewalls are driven by attractive electrostatic forces. The structural morphology and properties of ZnO nanowires are significantly affected by the co-doping and mainly governed by the effect of Al(III) species. The incorporation processes of Al and Ga dopants are characterized by significant interplay effects, and the amount of incorporated Ga dopants into ZnO nanowires is found to be larger than the amount of incorporated Al dopants owing to energetic considerations. The Al and Ga dopants are located in the bulk of ZnO nanowires, but a part of Al and Ga lies on their surfaces, their incorporation processes in the bulk being enhanced by thermal annealing under oxygen atmosphere. Eventually, the Al and Ga dopants directly affect the incorporation of hydrogen-related defects, notably by annihilating the formation of VZn-nH defect complexes. These findings present an efficient strategy to proceed with the co-doping of ZnO nanowires grown by chemical bath deposition, opening perspectives to control their electronic structure properties with a higher precision.

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Evidence of Piezoelectric Potential and Screening Effect in Single Highly Doped ZnO:Ga and ZnO:Al Nanowires by Advanced Scanning Probe Microscopy

Cited by 15 publications

References 64 publications

Length and polarity dependent saturation of the electromechanical response of piezoelectric semiconducting nanowires

Length and polarity dependent saturation of the electromechanical response of piezoelectric semiconducting nanowires

Enhanced photocatalytic activity of chemically deposited ZnO nanowires using doping and annealing strategies for water remediation

Interplay Effects in the Co-Doping of ZnO Nanowires with Al and Ga Using Chemical Bath Deposition

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