Evidence of localization effect on photoelectron transport induced by alloy disorder in nitride semiconductor compounds
Mylène Sauty,
Nicolas M. S. Lopes,
Jean-Philippe Banon
et al.
Abstract:Near-bandgap photoemission spectroscopy experiments were performed on p-GaN and p-InGaN/GaN photocathodes activated to negative electron affinity. The photoemission quantum yield of the InGaN samples drops by more than one order of magnitude when the temperature is decreased while it remains constant on the GaN sample. This indicates a freezing of photoelectron transport in p-InGaN that we attribute to electron localization in the fluctuating potential induced by the alloy disorder. This interpretation is conf… Show more
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