We present the results of variable-angle spectroscopic ellipsometry and transmittance measurements to determine the variation of the complex refractive index of ion implanted single-crystal diamond. An increase is found in both real and imaginary parts at increasing damage densities. The index depth variation is determined in the wholeOCIS Codes: 160.4760, 120.2130Codes: 160.4760, 120. , 260.1180Codes: 160.4760, 120. , 300.1030 Single-crystal diamond has attracted considerable attention in recent years in the photonics community due to the properties of its broad range of active luminescent centers, which offer promising opportunities in quantum cryptography and quantum information processing [1]. Nitrogen-Vacancy (NV) defects in particular display particularly attractive characteristics due to their individual addressability, optical spin polarization and long coherence times, even at room temperatures [2,3]. The prospect of creating all-diamond integrated photonic structures has thus triggered interest in the possibility of fabricating optical waveguides [4] and other photonic structures [5] in diamond using ion implantation to modulate its refractive index. Moreover, an accurate control of refractive index variations is mandatory in all photonic applications which are based on ion implantation [6]. Despite this, a surprisingly small number of publications in the literature have addressed the problem of the index of refraction variation in diamond with ion irradiation [7][8][9]. Following the first systematic studies of damage-induced refractive index variation at a fixed wavelength [10] and the demonstration of waveguide fabrication in diamond with ion implantation [4], the dependence of refractive index variation upon structural damage needs to be systematically explored in a wide wavelength range for a broader spectrum of ion species and energies. In this paper, we report on the use of Variable-Angle Spectroscopic Ellipsometry [11] (VASE) integrated with optical absorption measurement to assess refractive index and extinction coefficient variations as a function of damage density. Experimental. Ion implantation was performed on single-crystal CVD diamonds produced by ElementSix. The samples have 100 crystal orientation, size 3×3×0.5 mm 3 and are classified as type IIa, with two optically polished opposite large faces. Four samples were implanted with 180 keV B ions, at the Olivetti I-Jet facilities in Arnad (Aosta, Italy). The whole upper surface of the four samples was irradiated uniformly with fluences of 10 13 , 5•10 13 , 10 14 and 5•10 14 cm -2 with an accuracy below 0.5%. Ellipsometric characterization of the samples was performed using a Woollam M2000-FI [12] variable-angle spectroscopic ellipsometer in the wavelength range from 246 to 1690 nm. For each sample, data were acquired at incidence angles of 63°, 65°, 67°, 69° and 71° with respect to the surface normal.