Evidence of electronic band redistribution in La<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mrow><mml:mn>0.65</mml:mn></mml:mrow></mml:msub></mml:math>Sr<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mrow><mml:mn>0.35</mml:mn></mml:mrow></mml:msub></mml:math>MnO<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mrow><mml:mn>3</mml:mn><mml:mo>−</mml

Schlueter, Christoph; Orgiani, P.; Lee, T.-L.; Petrov, A. Yu.; Galdi, Alice; Davidson, B. A.; Zegenhagen, J.; Aruta, C.

doi:10.1103/physrevb.86.155102

Cited by 26 publications

(15 citation statements)

References 43 publications

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“…3b). This valence band evolution due to oxygen deficiency in LSMO is further supported by recent hard X-ray measurement reported on LSMO films annealed in vacuum 24 . Therefore, our data indicate that below 30 u.c., oxygen vacancies increases with decreasing thickness.…”

supporting

confidence: 82%

Tuning the dead-layer behavior of La_0.67Sr_0.33MnO₃/SrTiO₃ via interfacial engineering

Peng

Xia

et al. 2014

Appl. Phys. Lett.

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Transition metal oxide hetero-structure has great potential for multifunctional devices. However, the degraded physical properties at interface, known as dead-layer behavior, present a main obstacle for device applications. Here we present the systematic study of the dead-layer behavior in La 0.67 Sr 0.33 MnO 3 thin film grown on SrTiO 3 substrate with ozone assisted molecular beam epitaxy. We found that the evolution of electric and magnetic properties as a function of thickness shows a remarkable resemblance to the phase diagram as a function of doping for bulk materials, providing compelling evidences of the hole depletion in near interface layers that causes dead-layer. Detailed electronic and surface structure studies indicate that the hole depletion is due to the intrinsic oxygen vacancy formation. Furthermore, we show that oxygen vacancies are partly caused by interfacial electric dipolar field, and thus by dopingengineering at the single-atomic-layer level, we demonstrate the dead-layer reduction in films with higher interfacial hole concentration. PACS numbers: 75.47.Lx, 75.30.Kz, 79.60.Dp The complexity in transition metal oxides and their heterostructures, due to the entangled correlation of charge, spin, orbital, and lattice degrees of freedom, is a double-edged sword. On one hand, it brings out emergent phenomena in condensed matter physics 1-4 and various possibilities for multifunctional device applications 5,6 . On the other hand, it often conceals the physical mechanism of new phenomena due to theoretical difficulties and hinders the solutions to problems in device applications. One typical example is La 0.67 Sr 0.33 MnO 3 /SrTiO 3 (LSMO/STO) hetero-structure. LSMO is well-known for the colossal magnetoresistance, half metallic behavior, room temperature ferromagnetism, and high conductivity. These exotic properties make LSMO the most promising material for metal-based spintronic device, magneto-tunneling junctions, magnetic memory, etc. Success has been achieved in developing LSMO-based field effect transistors 7 and metal-base transistors 8 . However, in spite of a few reported working devices, a large variety of applications are restricted due to the dead-layer behavior, that is, the degraded ferromagnetism and metallicity with decreasing thickness and eventually insulating below certain critical thickness 9,10 . Therefore, it is crucial to investigate the mechanism of the dead-layer behavior in LSMO/STO, for both device application and fundamental understanding of oxide interface.Intensive studies have been conducted, and several scenarios have been proposed to explain the dead-layer behavior, such as magnetic 11,12 and orbital reconstruction at the interface [13][14][15] , and substrate-induced strain 10,16 . However, the situation is still very perplexing, and many issues remain to be understood. For example, it is not clear why the complicated electric and magnetic properties in ultra-thin films are extremely sensitive to film thickness. Extrinsic imperfections induced during fabricati...

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supporting

confidence: 82%

Tuning the dead-layer behavior of La_0.67Sr_0.33MnO₃/SrTiO₃ via interfacial engineering

Peng

Xia

et al. 2014

Appl. Phys. Lett.

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“…An average 0.22 e (where e is the charge of the electron) per Mn ions can be roughly estimated for the charge transfer amplitude at the LCMO interface region. On the other hand, this kind of shoulder structure has been depicted as “well-screened” feature related to the doping-induced density of state of the e g valence electrons4142. In particular, the screening feature is related to a nonlocal screening as reported by Veenendaal et al .…”

Section: Resultsmentioning

confidence: 88%

“…Figure 5(a) shows different splitting magnitudes in the binding energy of Mn 3 s of the LCMO layer and the interface. The energy separation ( ΔE ) between the splitting peaks is derived from the different valence states of Mn ions due to the interaction between the 3 s core hole and 3 d electrons for the 3 d transition metals4748, and can be described by the following formula: ΔE = (2 S + 1) J 3 s −3 d ; where S is the total spin moment and J 3 s −3 d is the effective exchange integral between Mn 3 d and Mn 3 s states42. A direct experimental result shows that the energy separation between the splitting peaks of a high-spin state at the lower binding energy noted as 3 S (1) and a low-spin state at the higher binding energy noted as 3 S (2).…”

Section: Resultsmentioning

confidence: 99%

Fermi Level shifting, Charge Transfer and Induced Magnetic Coupling at La0.7Ca0.3MnO3/LaNiO3 Interface

Ning

Wang

Zhang

2015

Sci Rep

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A large magnetic coupling has been observed at the La0.7Ca0.3MnO3/LaNiO3 (LCMO/LNO) interface. The x-ray photoelectron spectroscopy (XPS) study results show that Fermi level continuously shifted across the LCMO/LNO interface in the interface region. In addition, the charge transfer between Mn and Ni ions of the type Mn3+ − Ni3+ → Mn4+ − Ni2+ with the oxygen vacancies are observed in the interface region. The intrinsic interfacial charge transfer can give rise to itinerant electrons, which results in a “shoulder feature” observed at the low binding energy in the Mn 2p core level spectra. Meanwhile, the orbital reconstruction can be mapped according to the Fermi level position and the charge transfer mode. It can be considered that the ferromagnetic interaction between Ni2+ and Mn4+ gives rise to magnetic regions that pin the ferromagnetic LCMO and cause magnetic coupling at the LCMO/LNO interface.

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“…57 Nevertheless, the origin of the dead-layer formation in LSMO 58 thin films is still under debate [22]. Possible mechanisms 59 likely playing a role are substrate-induced strain and structural 60 distortions [23,24], chemical impurities and vacancies [25], as 61 well as intermixing at the IF [26].…”

Section: Introductionmentioning

confidence: 99%

Tuning electronic reconstructions at the cuprate-manganite interface

Schlueter

Aruta

Yang

et al. 2019

Phys. Rev. Materials

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The electronic properties of CaCuO 2 /La 0.7 Sr 0.3 MnO 3 (LSMO) superlattices are determined by the electronic structure of the structural units and in particular their interfaces. The electronic structure of LSMO is governed by a metal-insulator transition, which is controlled by the thickness of the units and the sample temperature, resulting in a systematic downward band shift for metallic samples (i.e., thick LSMO units, low temperature). We present a systematic study of the changes in the valence-band structure and screening features in Mn 2p and Cu 2p core-level spectra. The results show that hybridization of Cu 3d orbitals with out-of-plane O 2p orbitals can be systematically tuned by controlling the band alignment at the interface via the metal-to-insulator transition of the LSMO units. This opens a new route to rational design of functional interfaces and control of orbital reconstructions.

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Evidence of electronic band redistribution in La0.65Sr0.35MnO3−

Cited by 26 publications

References 43 publications

Tuning the dead-layer behavior of La_0.67Sr_0.33MnO₃/SrTiO₃ via interfacial engineering

Tuning the dead-layer behavior of La_0.67Sr_0.33MnO₃/SrTiO₃ via interfacial engineering

Fermi Level shifting, Charge Transfer and Induced Magnetic Coupling at La0.7Ca0.3MnO3/LaNiO3 Interface

Tuning electronic reconstructions at the cuprate-manganite interface

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Evidence of electronic band redistribution in La0.65Sr0.35MnO3−

Cited by 26 publications

References 43 publications

Tuning the dead-layer behavior of La0.67Sr0.33MnO3/SrTiO3 via interfacial engineering

Tuning the dead-layer behavior of La0.67Sr0.33MnO3/SrTiO3 via interfacial engineering

Fermi Level shifting, Charge Transfer and Induced Magnetic Coupling at La0.7Ca0.3MnO3/LaNiO3 Interface

Tuning electronic reconstructions at the cuprate-manganite interface

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Tuning the dead-layer behavior of La_0.67Sr_0.33MnO₃/SrTiO₃ via interfacial engineering

Tuning the dead-layer behavior of La_0.67Sr_0.33MnO₃/SrTiO₃ via interfacial engineering