Evidence of band bending induced by hole trapping at MAPbI₃perovskite/metal interface

Abstract

Unexpected band bending at the Au/MAPbI3interface induced by the trapping of holes.

Low‐Voltage, Optoelectronic CH3NH3PbI3−xClx Memory with Integrated Sensing and Logic Operations

“…A broad distribution of hole trap states is presented in the band gap above the valence energy. In previous studies, researchers also employed the UPS technique to examine the surface trap states in the perovskite thin film, which are in consistent with our results These trap states can provide hole trapping centers at the perovskite/Au interface, which is essential to understand the switching behavior in the CH 3 NH 3 PbI 3− x Cl x memory device.…”

P3HT-based visible-light organic photodetectors using PEI/PAA multilayers as a p-type buffer layer

“…33 The potential barrier formed by the energy level difference between the materials constituting the electronic device causes the accumulation of carriers at the interface, which results in band bending. 34,35 In the device comprising the (PEI/PAA) n lm, electron tunneling occurs because of interfacial energy band bending due to the accumulation of photogenerated holes between (PEI/PAA) n and the active layer under an external electric eld; this is schematically illustrated in Fig. 2.…”

Oxide Layer Enhances Photocurrent Gain of the Planar MAPbI3 Photodetector

“…The metalperovskite energy-band diagram in the thermal equilibrium is shown in Figure 6b. Assuming Fermi level is in the middle of MAPbI 3 bandgap, [28,29] barriers for electrons are formed in devices with Au and Pt electrodes, which have work functions close to the ionization energy of MAPbI 3 . However, depending on the Fermi level position in MAPbI 3 , which is not completely clear, Schottky barriers may be formed for electrons or holes.…”

“…[22,30] Thus, fraction of holes is trapped and creates a positive space charge close to the negatively biased electrode. [22,30] Thus, fraction of holes is trapped and creates a positive space charge close to the negatively biased electrode.…”