Evidence of a Shockley-Read-Hall Defect State Independent of Band-Edge Energy in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi>InAs</mml:mi><mml:mo>/</mml:mo><mml:mi>In</mml:mi><mml:mo stretchy="false">(</mml:mo><mml:mi>As</mml:mi><mml:mo>,</mml:mo><mml:mi>Sb</mml:mi><mml:mo stretchy="false">)</mml:mo></mml:mrow></mml:math>Type-II Superlattices

Aytac, Yigit; Olson, B. V.; Kim, J. K.; Shaner, Eric A.; Hawkins, Samuel D.; Klem, John F.; Flatté, Michael E.; Boggess, Thomas F.

doi:10.1103/physrevapplied.5.054016

Cited by 21 publications

(5 citation statements)

References 23 publications

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“…When the Sb element is introduced into InAs, the cutoff wavelength response of ternary InAsSb could be extended to long-wavelength infrared range owing to the bandgap bowing effect [3]. Consequently, InAsSb is considered as an ideal candidate in the area of infrared detection [4][5][6]. In the field of optoelectronics, one-dimensional (1D) nanostructures [7] have tremendous unique properties including large surface area with numerous trap states, long path length for photon absorption and mechanically flexible structure due to their huge aspect ratios [8].…”

Section: Introductionmentioning

confidence: 99%

Photoelectronic Properties of End-bonded InAsSb Nanowire Array Detector under Weak Light

et al. 2021

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A simple fabrication of end-bonded contacts InAsSb NW (nanowire) array detector to weak light is demonstrated in this study. The detector is fabricated using InAsSb NW array grown by molecular beam epitaxy on GaAs substrate. The metal-induced gap states are induced by the end-bonded contact which suppresses the dark current at various temperatures. The existence of the interface dipole due to the interfacial gap states enhances the light excitation around the local field and thus upgrades the photoresponsivity and photodetectivity to the weak light. The light intensity of the infrared light source in this report is 14 nW/cm2 which is about 3 to 4 orders of magnitude less than the laser source. The responsivity of the detector has reached 28.57 A/W at room temperature with the light (945 nm) radiation, while the detectivity is 4.81 × 1011 cm·Hz1/2 W−1. Anomalous temperature-dependent performance emerges at the variable temperature experiments, and we discussed the detailed mechanism behind the nonlinear relationship between the photoresponse of the device and temperatures. Besides, the optoelectronic characteristics of the detector clarified that the light-trapping effect and photogating effect of the NWs can enhance the photoresponse to the weak light across ultraviolet to near-infrared. These results highlight the feasibility of the InAsSb NW array detector to the infrared weak light without a cooling system.

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Section: Introductionmentioning

confidence: 99%

Photoelectronic Properties of End-bonded InAsSb Nanowire Array Detector under Weak Light

et al. 2021

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“…3 Consequently, InAsSb is considered as an ideal candidate in the area of infrared detection. [4][5][6] One-dimensional NWs have advantages such as high aspect ratio, small size effect, and quantum effect. 7 Additionally, during their development, NWs may easily release the lattice mismatch to substrates and in turn achieve high crystal quality.…”

Section: Introductionmentioning

confidence: 99%

Photoelectronic Properties of End-bonded InAsSb Nanowire Array Detector under Weak Light

Yao

Zhang²,

Kang

et al. 2020

Preprint

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A simple and low-cost fabrication of end-bonded contacts InAsSb NW (nanowire) array detector to weak light is demonstrated in this study. The detector is fabricated using InAsSb NW array grown by molecular beam epitaxy on GaAs substrate. The MIGS (metal-induced gap states) is induced by the end-bonded contact which suppresses the dark current at various temperatures. The existence of the interface dipole due to the interfacial gap states enhances the light excitation around the local field, thus upgrade the photo responsivity and photo detectivity to the weak light. The light intensity of the infrared light source in this report is 14 nW/cm2 which is about 3 to 4 orders of magnitude less than the laser source. The responsivity of the detector has reached 28.57 A/W at room temperature with the light (945 nm) radiation, while the detectivity is 4.81×1011 cm·Hz1/2 W−1. Anomalous temperature-dependent performance emerges at the variable temperature experiments, and we discussed the detailed mechanism behind the non-linear relationship between the photoresponse of the device and temperatures. Besides, the optoelectronic characteristics of the detector clarified that the light trapping effect and photogating effect of the NWs can enhance the photoresponse to the weak light across ultraviolet to near-infrared. These results highlight the feasibility of the InAsSb NW array detector to the infrared weak light without a cooling system.

show abstract

Section: Introductionmentioning

confidence: 99%

Photoelectronic Properties of End-bonded InAsSb Nanowire Array Detector under Weak Light

Yao

Zhang²,

Kang

et al. 2020

Preprint

View full text Add to dashboard Cite

A simple fabrication of end-bonded contacts InAsSb NW (nanowire) array detector to weak light is demonstrated in this study. The detector is fabricated using InAsSb NW array grown by molecular beam epitaxy on GaAs substrate. The MIGS (metal-induced gap states) is induced by the end-bonded contact which suppresses the dark current at various temperatures. The existence of the interface dipole due to the interfacial gap states enhances the light excitation around the local field, thus upgrade the photo responsivity and photo detectivity to the weak light. The light intensity of the infrared light source in this report is 14 nW/cm2 which is about 3 to 4 orders of magnitude less than the laser source. The responsivity of the detector has reached 28.57 A/W at room temperature with the light (945 nm) radiation, while the detectivity is 4.81×1011 cm·Hz1/2 W−1. Anomalous temperature-dependent performance emerges at the variable temperature experiments, and we discussed the detailed mechanism behind the non-linear relationship between the photoresponse of the device and temperatures. Besides, the optoelectronic characteristics of the detector clarified that the light trapping effect and photogating effect of the NWs can enhance the photoresponse to the weak light across ultraviolet to near-infrared. These results highlight the feasibility of the InAsSb NW array detector to the infrared weak light without a cooling system.

show abstract

Evidence of a Shockley-Read-Hall Defect State Independent of Band-Edge Energy inInAs/In(As,Sb)Type-II Superlattices

Cited by 21 publications

References 23 publications

Photoelectronic Properties of End-bonded InAsSb Nanowire Array Detector under Weak Light

Photoelectronic Properties of End-bonded InAsSb Nanowire Array Detector under Weak Light

Photoelectronic Properties of End-bonded InAsSb Nanowire Array Detector under Weak Light

Photoelectronic Properties of End-bonded InAsSb Nanowire Array Detector under Weak Light

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