Evidence for vertical superlattices grown by surface selective growth in MOMBE (CBE)

Heinecke, H.; Baur, B.; Höger, R.; Miklis, A.; Cremer, C.; Matz, R.

doi:10.1016/0022-0248(92)90458-u

Cited by 20 publications

(8 citation statements)

References 19 publications

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“…Once again, applying a Wulff geometrical construction allows us to find a relation linking the h/a parameter as defined in the inset of figure 7 and the surface energies for [110]-oriented stripes as proposed by Lee et al [14]: This explains why (111)B facets are prominent for stripes directed along [110]. On the other hand, for the aperture directed along [1][2][3][4][5][6][7][8][9][10], no significant change of the nanostructure shape can be noticed between samples C and F. This is mainly due to the fact that the surface energies (especially the (111)A one) are not very sensitive to variations in the chemical potential.…”

Section: Discussionmentioning

confidence: 88%

“…Electron beam lithography was used to get patterns of different sizes in the resist deposited on the oxide layer. The pattern consists of 200 nm wide and 4 micron long stripe openings oriented either along the [110] or [1][2][3][4][5][6][7][8][9][10] directions. By means of reactive ion etching, the SiO 2 layer was partially removed inside the patterns so that the remaining thin oxide layer protected the InP surface from damage and contamination during the solvent and hydrogen plasma-cleaning step for resist removal.…”

Section: Methodsmentioning

confidence: 99%

“…In the 1990s, this approach was used on micrometer scale patterns, as for instance in the work of Heinecke et al which detailed the faceting of InP microcrystals depending on the opening orientation and the value of P/In using metalorganic vapor phase epitaxy (MOVPE) or metalorganic molecular beam epitaxy (MOMBE). They achieved vertical sidewalls on the grown structures for high P/In ratios using small substrate misorientation [1][2][3]. A recent work also reports on the influence on the base size and shape on the formation of InP pyramids by selective area MOVPE, stressing the interplay between the major low-index facets in the final shape [4].…”

Section: Introductionmentioning

confidence: 99%

“…In this paper, we study the faceting of InP (001) nanocrystals formed in 200 nm wide stripe openings oriented along the [110] and [1][2][3][4][5][6][7][8][9][10] directions. We especially stress the influence of the P/In flux ratio on the final faceting and show that along the [110] direction, the final nanostructure shape can be tailored thanks to the growth conditions.…”

Section: Introductionmentioning

confidence: 99%

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Impact of P/In flux ratio and epilayer thickness on faceting for nanoscale selective area growth of InP by molecular beam epitaxy

Fahed

Desplanque²,

Coinon³

et al. 2015

Nanotechnology

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The impact of the P/In flux ratio and the deposited thickness on the faceting of InP nanostructures selectively grown by molecular beam epitaxy (MBE) is reported. Homoepitaxial growth of InP is performed inside 200 nm wide stripe openings oriented either along a [110] or [1-10] azimuth in a 10 nm thick SiO2 film deposited on an InP(001) substrate. When varying the P/In flux ratio, no major shape differences are observed for [1-10]-oriented apertures. On the other hand, the InP nanostructure cross sections strongly evolve for [110]-oriented apertures for which (111)B facets are more prominent and (001) ones shrink for large P/In flux ratio values. These results show that the growth conditions allow tailoring the nanocrystal shape. They are discussed in the framework of the equilibrium crystal shape model using existing theoretical calculations of the surface energies of different low-index InP surfaces as a function of the phosphorus chemical potential, directly related to the P/In ratio. Experimental observations strongly suggest that the relative (111)A surface energy is probably smaller than the calculated value. We also discuss the evolution of the nanostructure shape with the InP-deposited thickness.

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Section: Discussionmentioning

confidence: 88%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Impact of P/In flux ratio and epilayer thickness on faceting for nanoscale selective area growth of InP by molecular beam epitaxy

Fahed

Desplanque²,

Coinon³

et al. 2015

Nanotechnology

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“…Much recent research effort has been directed towards the use of chemical-beam epitaxy ͑CBE͒ for the growth of devices based upon the GaAs/AlGaAs, InGaAs/GaAs, and InGaAs/InP systems, [1][2][3][4][5] and exceptionally rapid progress has been made. However, there are concerns regarding the use of the current standard CBE indium precursor, trimethyl indium ͑TMIn͒.…”

Section: Introductionmentioning

confidence: 99%

Chemical-beam-epitaxy growth of indium-containing III–V compounds using triisopropylindium

Freer¹,

Lane²,

Martin³

et al. 1996

Journal of Applied Physics

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Articles you may be interested inChemical beam epitaxy growth of III-V semiconductor nanowires AIP Conf. Proc. 1569, 355 (2013); 10.1063/1.4849293 High growth rate of III-V compounds by free carrier gas chemical beam epitaxy J. Vac. Sci. Technol. B 13, 55 (1995); 10.1116/1.587985 Lightenhanced molecularbeam epitaxial growth in II-VI and III-V compound semiconductors J. Vac. Sci. Technol. B 6, 779 (1988); 10.1116/1.584374 Instabilities of (110) III-V compounds grown by molecular beam epitaxyTriisopropyl indium ͑TIPIn͒ has been investigated as an alternative to trimethyl indium for use in chemical-beam epitaxy ͑CBE͒. In previous CBE studies of GaAs/AlGaAs growth, the replacement of methyl-containing precursors with ethyl-and isopropyl-containing precursors has been shown both to widen the substrate temperature window available for growth, and also to reduce unintentional carbon incorporation in the grown layers. In the present study of ͑100͒In x Ga 1Ϫx As ͑0рxр0.1͒ growth using the new TIPIn source, in situ modulated-beam mass spectrometry studies have demonstrated a similar, and technologically very important, widening of the substrate temperature window. Furthermore, use of the new precursor combination, TIPIn and triisopropyl gallium, is also shown to generate state-of-the-art InGaAs material with electrical and optical properties directly comparable to corresponding material grown using molecular-beam epitaxy.

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Concepts for Lateral III–V Heterostructures Fabricated by Surface Selective Growth in MOMBE

Heinecke

1995

Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates

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Evidence for vertical superlattices grown by surface selective growth in MOMBE (CBE)

Cited by 20 publications

References 19 publications

Impact of P/In flux ratio and epilayer thickness on faceting for nanoscale selective area growth of InP by molecular beam epitaxy

Impact of P/In flux ratio and epilayer thickness on faceting for nanoscale selective area growth of InP by molecular beam epitaxy

Chemical-beam-epitaxy growth of indium-containing III–V compounds using triisopropylindium

Concepts for Lateral III–V Heterostructures Fabricated by Surface Selective Growth in MOMBE

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