Evidence for trigonal symmetry of the metastable state of the<i>EL</i>2 defect in GaAs

Trautman, P.; Baranowski, J. M.

doi:10.1103/physrevlett.69.664

Cited by 33 publications

(43 citation statements)

References 25 publications

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“…In this model the two As atoms involved have threefold bondings, while their nearest neighbours continue to have fourfold bondings. This metastable configuration, however, has a lower than C 3v symmetry and is in contrast to the results of an investigation of the recovery processes of the EL2 defect from the metastable state into the visible ground state under uniaxial stress [109]. In this investigation there were indications for a C 3v symmetry of the metastable state.…”

Section: El2contrasting

confidence: 92%

Structural Analysis of Intrinsic Defects in GaAs and AlxGa1xAs by Magnetooptically Detected Magnetic Resonance Spectroscopy

Koschnick

Spaeth

1999

phys. stat. sol. (b)

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Section: El2contrasting

confidence: 92%

Structural Analysis of Intrinsic Defects in GaAs and AlxGa1xAs by Magnetooptically Detected Magnetic Resonance Spectroscopy

Koschnick

Spaeth

1999

phys. stat. sol. (b)

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“…where E 0 is the position of the E 2g line in the initial state and a is a scaling parameter. It is worth noting that similar correlation between the illumination and the changes in crystalline structure is found in other semiconductors, such as GaN 27 , GaAs 28,29 or AlGaAs 30 .…”

Section: A Electric Field Measurementssupporting

confidence: 59%

Laser-controlled field effect in graphene/hexagonal boron nitride heterostructures

Własny

Stępniewski

Klusek

et al. 2018

Journal of Applied Physics

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The possibility of modification of the local properties of hexagonal boron nitride (h-BN) by laser irradiation is investigated. Investigations conducted using both Raman spectroscopy and electrostatic force microscopy were performed. Laser light induced modifications are found to cause no structural changes. However, they impact the Raman spectra and local charge state of the material. They are also shown to be stable in time and during electrical grounding of the sample. A mechanism of photoionization of deep defects present in h-BN is proposed to explain the observed phenomenon. The discussed effect opens up a new method of nanostructuration of h-BN based planar heterostructures. CONTENTS

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“…Recently we have shown experimentally [1] that the transformation of the EL2 defect from the normal to the metastable state is connected with a lowering of the symmetry of the defect from tetrahedral Td to trigonal C3v. The evidence was based on the study of recovery of optical absorption due to EL2 during heating of the crystal under un iaxial stress.…”

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confidence: 99%

Light Induced Ordering of the EL2 Defects in the Metastable State

Trautman

Baranowski

1993

Acta Phys. Pol. A

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We tried to detect a strain in the crystal induced by the ordering of the ΕL2 defects in the metastable state by measuring linear dichroism and birefringence. We found that this strain is below the detection limit of our experiments and lower than that induced by 1 MPa of externał stress. The observed dependence of orientation of the ΕL2 defects in the metastable state on the polarization of light used to transform ΕL2 to the metastable state is consistent with the attribution of the metastability of ΕL2 to the transformation of the isolated AsG a to the VGaAsi defect and is in conffict with the AsGa-Asi defect pair mode1 of ΕL2.PACS numbers: 71.55. Eq, 78.50.Ge, 78.20.Ηpa Recently we have shown experimentally [1] that the transformation of the EL2 defect from the normal to the metastable state is connected with a lowering of the symmetry of the defect from tetrahedral Td to trigonal C3v. The evidence was based on the study of recovery of optical absorption due to EL2 during heating of the crystal under un iaxial stress. The recovery step of optical absorption splits under [111] stress and no splitting is observed under [100] stress. This indicates that EL2 in the metastable state is orientationally degenerate and has trigonal C3v symmetry. From the relative magnitudes of the steps it was judged that the centers recovering at lower temperature are oriented along the [111] direction of the stress and those recovering at higher temperature are oriented aslant to this direction.Further evidence for the orientational degeneracy of EL2 in the metastable state is that the relative magnitude of the steps can be altered by excitation of the metastability with polarized light or by excitation under stress (see Fig. 1). Excitation of metastability with light polarized parallel to the [111] direction results in an increased number of centers in the metastable state oriented along this direction, and excitation with light polarized perpendicularly results in a decreased number of centers oriented along the [111] direction (see curves b and c in Fig. 1). All the centers became oriented aslant the [111] direction of the stress after excitation performed under stress of 500 MPa (see curve d in Fig. 1). When the centers were transferred to the metastable state by illumination with unpolarized light, and therefore became oriented both along and aslant to the [111] direction, (677)

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Evidence for trigonal symmetry of the metastable state of theEL2 defect in GaAs

Cited by 33 publications

References 25 publications

Structural Analysis of Intrinsic Defects in GaAs and AlxGa1xAs by Magnetooptically Detected Magnetic Resonance Spectroscopy

Structural Analysis of Intrinsic Defects in GaAs and AlxGa1xAs by Magnetooptically Detected Magnetic Resonance Spectroscopy

Laser-controlled field effect in graphene/hexagonal boron nitride heterostructures

Light Induced Ordering of the EL2 Defects in the Metastable State

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