Evidence for the Weak Domain Wall Pinning Due to Oxygen Vacancies in SrBi2Ta2O9 from Internal Friction Measurements

Wang, Zhi-yone; Chen, Tingguo

doi:10.1002/(sici)1521-396x(199805)167:1<r3::aid-pssa99993>3.0.co;2-5

Cited by 29 publications

(9 citation statements)

References 5 publications

(5 reference statements)

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“…Variation of the square of vibration frequency f 2 (top) and the internal friction Q À1 (bottom) as a function of temperature for PZT73 and PZT37 ceramics independent of the frequency; (iii) it exhibits a thermal hysteresis for the cooling and heating processes. According to the above results, P M shows some characteristics of static hysteresis loss, similar to the P M2 of KDP and TGS found by Wang et al [7,8]. So we think P M originates from the viscous motion of the domain walls.…”

Section: Resultssupporting

confidence: 85%

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Study on Low Frequency Internal Friction for Pb(Zr,Ti)O3 Ferroelectric Ceramics

Wang

et al. 2000

phys. stat. sol. (a)

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The internal friction Q À1 and the square of vibration frequency f 2 (proportional to shear modulus G) were measured as functions of temperature on undoped Pb(Zr 0.7 Ti 0.3 )O 3 (PZT73) and Pb(Zr 0.3 Ti 0.7 )O 3 (PZT37) ceramics from 20 to 500 C. Experiments were performed on an inverted torsion pendulum at low frequencies (0.1 to 5 Hz). Two internal friction peaks were found in pure rhombohedral PZT73 ceramics. The high temperature peak P M , which appears near the Curie temperature, originates from the viscous movement of domain walls. The low temperature peak P 1 is a broadened Debye peak in nature, and it is attributed to the oscillation damping of the domain walls presumably acted by charged oxygen vacancies. For the pure tetragonal PZT37 ceramics, another peak P 2 , which appears between P 1 and P M , can be well described by the coupling model. It is thought to be caused by the relaxation of oxygen vacancy clusters near the 90 domains.

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Section: Resultssupporting

confidence: 85%

“…A compromise of the above two factors brings about the static hysteresis peak. It is noteworthy that similar Q À1 peaks were also observed by Wang et al [7,8] in a series of ferroelectrics and some ferroelastic alloys. This suggests that the damping peak stemming from viscous motion of domain walls may universally exist in most ferroics.…”

Section: Resultssupporting

confidence: 84%

Study on Low Frequency Internal Friction for Pb(Zr,Ti)O3 Ferroelectric Ceramics

Wang

et al. 2000

phys. stat. sol. (a)

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“…Since the SLPL shows thermally activated characteristics with an activation energy around 0.89 eV, which is quite close to the activation energy for oxygen vacancies jumping in many perovskite structures, 20,21 it is speculated that SLPL is associated with the migration of oxygen vacancies among those nonequivalent oxygen positions in ceramics. This speculation could be further confirmed by reviewing the dielectric loss result shown in Fig.…”

Section: ͑4͒mentioning

confidence: 70%

Crossover from a nearly constant loss to a superlinear power-law behavior in Mn-doped Bi(Mg1/2Ti1/2)O3–PbTiO3 ferroelectrics

Huang

et al. 2010

Journal of Applied Physics

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Mn-doped Bi͑Mg 1/2 Ti 1/2 ͒ -PbTiO 3 disordered ferroelectric ceramics were studied under ac electric fields and a crossover from a nearly constant loss to a superlinear power-law behavior was observed. Our results confirmed that the nearly constant loss behavior also exists in disordered ferroelectrics. The exponent of the superlinear power-law was found to be temperature dependent. Such a behavior was related to the local movements of oxygen vacancies.

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“…Values of activation energy obtained for the present compound indicate that the conduction could be due to the electrons/holes in the low temperature regime and oxygen vacancies at higher temperatures. The values of E a reported for oxygen vacancy jumping in SrBi 2 Ta 2 O 9 is ∼0.9 eV, around 0.7 eV for Bi 4 Ti 3 O 12 and 0.9-1.1 eV for Bi 3.25 La 0.75 Ti 3 O 12 ceramics [26,[31][32]. The value of E a obtained for the present compound is consistent with the activation energies of oxygen vacancies in the other known Aurivillius compounds, confirming that the conduction in 450-580 • C temperature range for Na 0.5 La 0.5 Bi 4 Ti 4 O 15 ceramics is via the oxygen vacancy mechanism.…”

Section: Resultsmentioning

confidence: 94%

“…By linear fitting of the experimental data points, the calculated values of activation energy E A obtained are 0.84 eV above 450 • C and 0.24 eV below 450 • C associated with an error of ±0.02 eV. In the Aurivillius family of oxides, the main contribution to the electrical conductivity at high temperatures generally originates from the thermally activated oxygen vacancies [6][7][8]15,26,[30][31][32]. These vacancies act as the trapping centres for the mobile charge carriers and conductivity increases considerably in the high temperature region, via the hopping of the charge carriers among the available oxygen vacancies.…”

Section: Resultsmentioning

confidence: 99%