Evidence for the formation of GaAs homojunction far-infrared detection by magnetic field dependent Hall analysis

Abstract

Experimental magnetic field dependent Hall and resistivity data are presented for n-GaAs homojunction far-infrared (FIR) detector structures in the temperature range from 1.8 to 200.0 K and with a magnetic field up to 15 T. The carrier transport properties of the multilayer/multicarrier structure have been separated and quantified individually by a hybrid approach consisting of mobility spectrum analysis followed by a multicarrier fitting procedure. The observed temperature dependence of mobility and concentration is explained using classical band theory, which unambiguously reveals highly doped degenerate contact layers and semiconductor-metal transition in emitter layers. The detailed analysis of the concentration and the Fermi level in the emitter layers gives clear evidence for the formation of GaAs homojunction FIR detection occurring at the interfaces between the emitter and intrinsic layers.