Evidence for Structural Phase Transitions Induced by the Triple Phase Line Shift in Self-Catalyzed GaAs Nanowires

Yu, Xingxing; Wang, Hailong; Lu, Jun; Zhao, Jianhua; Misuraca, Jennifer; Xiong, Peng; Molnár, S. von

doi:10.1021/nl303323t

Cited by 83 publications

(122 citation statements)

References 25 publications

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“…However, it is very uncertain under which material systems and growth conditions ideal regime I conditions applies. It is likely that it is only relevant under non-steady-state conditions where the liquid decreases significantly in size, such as immediately after closing the shutter of the group III source or upon during cool down where the nucleation barrier is lowered [27]. But as recent in-situ TEM experiments [40][41][42] strongly suggests and as shown in the modelling examples in section 3.5, regime II may be a dominant VLS steady-state growth mode.…”

Section: Nucleation Limited Growthmentioning

confidence: 98%

“…If we assume a barrier free al transition, the exponentials vanish in equation (37) and the only dependence on δµ a j −ERS,III(V) is through the diffusion lengths. δµ a j −ERS,III(V) (ρ j,III , ρ j,V , T ) at z = L NW can now be solved numerically at every step time in a double iterative process for …”

Section: A2 Adatom Transition State Diffusion Calculations Using Anmentioning

confidence: 99%

“…Both the AuGa and the Ga cap have been emptied of As upon cooling down to room temperature after growth termination. morphology of the liquid-solid growth interface during growth [7,[25][26][27][28][29]. Thus, understanding and controlling the dynamics of NW growth is of great practical importance, and elucidating the effects of growth kinetics on especially the NW crystal shape, composition and on its crystalline quality have become major research topics [30][31][32][33][34].…”

Section: Introductionmentioning

confidence: 99%

“…However, since 2008 research on self-catalysed growth of GaAs NWs has received renewed interest [35,36]. It is today a highly appreciated growth mode for GaAs NWs by MBE and the control of the morphology and crystal phases has quickly reached a high level (see for example the recent growth experiments by Yu et al [37] and Munchi et al [38]). …”

Section: Introductionmentioning

confidence: 99%

“…There, we discuss the framework needed to analyse the liquid-solid phase transition to a facetted NW crystal where transitions on certain facets can be nucleation limited. A specific topic which has attracted huge attention, is the mechanisms controlling the relative formation rates of ZB, WZ or other types of crystal structures in III-V NWs [25][26][27][28]. This is treated and discussed in detail in the framework of the present theory in sections 2.3 and 3.5.…”

Section: Introductionmentioning

confidence: 99%

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Advances in the theory of III–V nanowire growth dynamics

Krogstrup¹,

Jørgensen²,

Johnson³

et al. 2013

J. Phys. D: Appl. Phys.

127

142

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Nanowire (NW) crystal growth via the vapour-liquid-solid mechanism is a complex dynamic process involving interactions between many atoms of various thermodynamic states. With increasing speed over the last few decades many works have reported on various aspects of the growth mechanisms, both experimentally and theoretically. We will here propose a general continuum formalism for growth kinetics based on thermodynamic parameters and transition state kinetics. We use the formalism together with key elements of recent research to present a more overall treatment of III-V NW growth, which can serve as a basis to model and understand the dynamical mechanisms in terms of the basic control parameters, temperature and pressures/beam fluxes. Self-catalysed GaAs NW growth on Si substrates by molecular beam epitaxy is used as a model system.

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Section: Nucleation Limited Growthmentioning

confidence: 98%

Section: A2 Adatom Transition State Diffusion Calculations Using Anmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Advances in the theory of III–V nanowire growth dynamics

Krogstrup¹,

Jørgensen²,

Johnson³

et al. 2013

J. Phys. D: Appl. Phys.

127

142

View full text Add to dashboard Cite

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Lattice‐Symmetry‐Driven Epitaxy of Hierarchical GaN Nanotripods

Wang

et al. 2017

Adv Funct Materials

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1604854(1 of 7)optoelectronic and electronic devices. [1][2][3][4] Most semiconductor NWs, such as GaN, ZnO, InP, and CdS, have hexagonal crystal structures in which the NWs preferably grow along the c-axis. [5][6][7][8] Recently, a lattice-symmetry effect was observed during the growth of NWs that formed novel nanostructures, such as nanotripods, [9] nanopropellers, [10] kinks, [11] and nanotrees. [12] These unique nanostructures can extend the applications of nanomaterials made from polytypic quantum wells (QWs) and crystal-phase quantum dots (QDs). [11,13] Nanotripods exhibit perfect rotational symmetry, suggesting that they have potential applications in multichannel devices. [9] Despite that, nanotripods have not yet been fully characterized. In particular, the formation mechanisms of hierarchical nanotripods and their correlations with lattice-symmetry effects, especially in III-nitride nanostructures, require further analysis.Taking into account their chemical inertness, radiation hardness, mechanical and electronic properties, and wide wavelength tunability from ultraviolet to near-infrared spectral range, III-nitride NWs are the most promising candidates for many nanoscale optoelectronic applications, such as nano-LEDs, [5,14] nanolasers, [2,15] nanowire solar cells, [16] nanobiochemical sensors, [17] and single photon emitters. [18][19][20] Intriguing nanostructures, particularly branches and tripods, have also been observed in III-nitrides. [21][22][23] Better understanding of the physics behind the formation of these nanostructures may lead to novel applications of III-nitride, such as field effect transistors (FET), [24] functionalized biochemical devices, [25] ultraviolet (UV) detectors, [26] logic switches, [27] electron beam irradiation detectors, [28] highly sensitive multiterminal sensors, [29,30] multichannel quantum communications systems, [31] etc. As one of the most prominent III-nitrides, GaN is an excellent candidate in which to explore the physics underlying the formation of novel nanostructures.Here, we demonstrate the epitaxy of GaN nanotripods that are characterized by a hexagonal trunk with a tetrahedral pyramid top that is decorated with ordered branches. More interestingly, several sets of direct-or cross-stacked nanotripods compose hierarchical nanotripods. The appearance of metastable zb-GaN on top of the hexagonal trunk has been identified as the origin of the nanotripods with N-polarity. Moreover, we confirm that the configuration of the hierarchical nanotripods Lattice-symmetry-driven epitaxy of hierarchical GaN nanotripods is demonstrated. The nanotripods emerge on the top of hexagonal GaN nanowires, which are selectively grown on pillar-patterned GaN templates using molecular beam epitaxy. High-resolution transmission electron microscopy confirms that two kinds of lattice-symmetry, wurtzite (wz) and zinc-blende (zb), coexist in the GaN nanotripods. Periodical transformation between wz and zb drives the epitaxy of the hierarchical nanotripods with N-polarity. The zb-GaN is for...

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Self‐Assembled Quantum Dot Structures in a Hexagonal Nanowire for Quantum Photonics

Dou

Wei

et al. 2014

Advanced Materials

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Two types of quantum nanostructures based on self-assembled GaAs quantumdots embedded into GaAs/AlGaAs hexagonal nanowire systems are reported, opening a new avenue to the fabrication of highly efficient single-photon sources, as well as the design of novel quantum optics experiments and robust quantum optoelectronic devices operating at higher temperature, which are required for practical quantum photonics applications.

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Evidence for Structural Phase Transitions Induced by the Triple Phase Line Shift in Self-Catalyzed GaAs Nanowires

Cited by 83 publications

References 25 publications

Advances in the theory of III–V nanowire growth dynamics

Advances in the theory of III–V nanowire growth dynamics

Lattice‐Symmetry‐Driven Epitaxy of Hierarchical GaN Nanotripods

Self‐Assembled Quantum Dot Structures in a Hexagonal Nanowire for Quantum Photonics

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