2010
DOI: 10.1103/physrevlett.104.227601
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Evidence for Strain-Induced Ferroelectric Order in Epitaxial Thin-FilmKTaO3

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Cited by 83 publications
(66 citation statements)
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References 41 publications
(52 reference statements)
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“…coherent growth of the superlattice on STO substrate, KTO subunit is in -2.3 % compressive strain. Note that coherent growth of KTO on STO substrate in experiments is just this case and the strain on KTO is -2.1%, 20,24,33 very close to our theoretical value. When -1.0% strain is imposed to the superlattice, the strain on KTO is -3.3%.…”
Section: Computational Detailssupporting
confidence: 64%
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“…coherent growth of the superlattice on STO substrate, KTO subunit is in -2.3 % compressive strain. Note that coherent growth of KTO on STO substrate in experiments is just this case and the strain on KTO is -2.1%, 20,24,33 very close to our theoretical value. When -1.0% strain is imposed to the superlattice, the strain on KTO is -3.3%.…”
Section: Computational Detailssupporting
confidence: 64%
“…This behavior is in accord with strain-induced ferroelectric properties in KTO and STO bulk. 20,35 We thereafter focus mainly on FE superlattices.…”
Section: Resultsmentioning
confidence: 99%
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“…[1][2][3][4][5][6][7][8] In particular, a new family of materials in which ferroelectric and dielectric constituents are combined in epitaxial superlattices with atomic layer thickness precision has recently been developed. Thin films can be commensurately strained to percent levels without fracture via lattice mismatch strain to an underlying substrate, 7 enabling enhancement of ferroelectric transition temperatures by hundreds of degrees, 7,25 the transformation of materials that are normally never ferroelectric into ferroelectrics, [9][10][11][12] or totally new phenomena to emerge. [13][14][15] Essential to understanding the fundamental relation between strain and polarization in superlattices is the analysis of the associated domain morphology.…”
Section: Introductionmentioning
confidence: 99%