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Das, Biswajit; Miller, Derick C.; Datta, Supriyo; Reifenberger, R.; Hong, Won‐Pyo; Bhattacharya, Pallab; Singh, J.; Jaffe, M. J.

doi:10.1103/physrevb.39.1411

Cited by 285 publications

(173 citation statements)

References 16 publications

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“…AlGaN/GaN 2DEG (L) [66] GaSb/InAs 2DEG (L) [67,68] InGaAs/InAlAs 2DEG(L) [69] Ge 2DHG (C) [57] Ge 2DHG (C) [56] Si 2DEG (L) [70] contacts (different sizes) allows switching of one contact in a magnetic field while the other remains fixed. The bottom figure shows a proposed spin FET design utilising a Ge QW as the channel.…”

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confidence: 99%

Strained germanium for applications in spintronics

Morrison

Myronov

2016

Physica Status Solidi (a)

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Germanium (Ge) is another group-IV semiconductor material, which recently started attracting tremendous attention in spintronics following success of silicon (Si). The crystal inversion symmetry of Si and Ge precludes the spin relaxation of conduction electrons by the Dyakonov-Perel mechanism, resulting in a long spin relaxation time. Since the proposal of the spin FET in 1990 by Datta and Das, semiconductor materials have been studied for their spin-orbit (S-O) interactions, particularly those that can be modified by an applied electric field, such as the Rashba S-O interaction, in order to create devices that utilise spin modulation and control to perform logic operations. Since then new proposals have appeared. Nowadays they include spin transistors with several different operating principles, spin-based diodes, spin-based field programmable gate arrays, dynamic spin-logic circuits, spin-only logic, spin communication and others. In this review, the focus will be made on presenting recent progress in Ge spintronics including the key advances made. The absence of Dresselhaus S-O coupling in Ge enables a longer spin diffusion length when compared to III-V semiconductor materials. Evidence of a strong Rashba S-O interaction in strained Ge quantum wells has begun to emerge. Also, the first experimental demonstration of room-temperature spin transport in Ge has recently been reported.

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confidence: 99%

Strained germanium for applications in spintronics

Morrison

Myronov

2016

Physica Status Solidi (a)

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“…We have also applied in-plane magnetic field of 0.01 T, small enough to allow the anticrossing close to the bottom of energy dispersion relations (zero slope points). (12) and (13). Although there is a little difference between spin paraboloids, due to the large energy difference between the resonant levels of both wells (∼12 meV) and the splitting of the spin sublevels (∼0.01 meV at p y = 0) it is not possible to distinguish minima behavior.…”

Section: Resultsmentioning

confidence: 99%

“…Several peculiarities for transport phenomena in heterostructures have been also discussed [12][13][14][15]. However, these discussions only consider the mix-ing between Pauli contribution and effective 2D spin-orbit interaction.…”

Section: Introductionmentioning

confidence: 99%

Abrupt barrier contribution to electron spin splitting in asymmetric coupled double quantum wells

Hernández‐Cabrera

Aceituno

2014

Indian J Phys

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We have studied the behavior of the electronic energy spin-splitting of InGaAs − InAlAs based double quantum wells (narrow gap structures) under in-plane magnetic and transverse electric fields. We have developed an improved 8 × 8 version of the Transfer Matrix Approach that consider contributions from abrupt interfaces and external fields when tunneling through central barrier exists. We have included the Landé g-factor dependence on the external applied field. Also, we have calculated electron density of states and photoluminescence excitation. Variations of the electron spin-splitting energy lead to marked peculiarities in the density of states.Because the density of states is directly related to photoluminescence excitation, these peculiarities are observable by this technique.

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“…In general, there are two different types of symmetry dependent SOI, Rashba 3,4 and Dresselhaus 5 SOIs, in various condensed matter systems. In twodimensional electron gas (2DEG) formed at the III-V semiconductor heterostructures 6 and in various topological insulating systems 7 , the Rashba SOI (RSOI) is linear in momentum and of the form H R = iαk − σ + +h.c., where α is the strength of RSOI, σ ± = σ x ± iσ y with σ x and σ y are the Pauli's spin matrices and k ± = k x ± ik y with k x and k y the components of the wave vector k. Besides, the Rashba SOI in two-dimensional hole gas formed at the interface of p-type GaAs/AlGaAs heterostructures 8,9 , 2DEG on the surface of SrTiO 3 single crystals 10 and in 2D hole gas formed in a strained Ge/SiGe quantum well 11 is cubic in momentum and is of the form H iso R = iαk 3 − σ + + h.c. The spin splitting energy due to this RSOI is always isotropic and hereafter we will mention this as isotropic cubic RSOI.…”

Section: Introductionmentioning

confidence: 99%

Optical conductivity of a 2DEG with anisotropic Rashba interaction at the interface of LaAlO₃/SrTiO₃

Mawrie

Ghosh²

2016

J. Phys.: Condens. Matter

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We study optical conductivity of a two-dimensional electron gas with anisotropic k-cubic Rashba spin-orbit interaction formed at the LaAlO3/SrTiO3 interface. The anisotropic spin splitting energy gives rise to different features of the optical conductivity in comparison to the isotropic k-cubic Rashba spin-orbit interaction. For large carrier density and strong spin-orbit couplings, the density dependence of Drude weight deviates from the linear behavior. The charge and optical conductivities remain isotropic despite anisotropic nature of the Fermi contours. An infinitesimally small photon energy would suffice to initiate inter-band optical transitions due to degeneracy along certain directions in momentum space. The optical conductivity shows a single peak at a given photon energy depending on the system parameters and then falls off to zero at higher photon energy. These features are lacking for systems with isotropic k-cubic Rashba spin-orbit coupling. These striking features can be used to extract the information about nature of the spin-orbit interaction experimentally and illuminate some light on the orbital origin of the two-dimensional electron gas.

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Evidence for spin splitting inInxGa1−xAs/

Cited by 285 publications

References 16 publications

Strained germanium for applications in spintronics

Strained germanium for applications in spintronics

Abrupt barrier contribution to electron spin splitting in asymmetric coupled double quantum wells

Optical conductivity of a 2DEG with anisotropic Rashba interaction at the interface of LaAlO₃/SrTiO₃

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Evidence for spin splitting inInxGa1−xAs/

Cited by 285 publications

References 16 publications

Strained germanium for applications in spintronics

Strained germanium for applications in spintronics

Abrupt barrier contribution to electron spin splitting in asymmetric coupled double quantum wells

Optical conductivity of a 2DEG with anisotropic Rashba interaction at the interface of LaAlO3/SrTiO3

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Product

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Optical conductivity of a 2DEG with anisotropic Rashba interaction at the interface of LaAlO₃/SrTiO₃