We have investigated the temperature dependence of exciton inelastic scattering processes, exciton-exciton scattering and exciton-electron scattering, in a ZnO thin film using spatially-resolved photoluminescence (PL) spectroscopy. It was found that the PL band due to the exciton inelastic scattering process is selectively observed at a spot around a film edge away from an excitation spot. The selective observation enabled us to measure precisely the PL-peak energy. The quantitative analysis of the temperature dependence of the PL-peak energy reveals that the exciton-exciton scattering, which occurs in a temperature region from 10 to ~160 K, changes to the exciton-electron scattering in a higher temperature region up to room temperature.