Evidence for oxygen vacancy manipulation in
            La1/3Sr2/3FeO3−𝜹 thin films via voltage controlled
          solid-state ionic gating

Krick, Alex L.; May, Steven J.

doi:10.1063/1.4982249

Cited by 8 publications

(5 citation statements)

References 45 publications

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“…Such a method also allows tuning of the electronic and magnetic properties by varying the oxygen content. For instance, ion liquid gating has been used to tune the functional properties via controlling oxygen ion migration in a variety of oxide thin films . Both the formation of cation vacancies and the change of the valence state have been observed in bulk and thin film LaMnO 3 …”

Section: Strain Defect and Microstructure Correlationmentioning

confidence: 99%

Metal Oxide Nanocomposites: A Perspective from Strain, Defect, and Interface

et al. 2018

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Complex metal oxides, which show a variety of functional properties such as ferromagnetism, ferroelectricity, multi-ferroelectricity, superconductivity, and ionic conduction, have attracted much attention in the past decades. These exotic physical properties arise from a complex hierarchy of competing interactions among spin, charge, orbital, and lattice degrees of freedom. The development of advanced characterization techniques such as electron microscopy, neutron scattering, synchrotron scattering and imaging, spectroscopy at high magnetic fields, and others has enabled us to study the interactions among these degrees of freedom coupled with strain, defect, and interface Vertically aligned nanocomposite thin films with ordered two phases, grown epitaxially on substrates, have attracted tremendous interest in the past decade. These unique nanostructured composite thin films with large vertical interfacial area, controllable vertical lattice strain, and defects provide an intriguing playground, allowing for the manipulation of a variety of functional properties of the materials via the interplay among strain, defect, and interface. This field has evolved from basic growth and characterization to functionality tuning as well as potential applications in energy conversion and information technology. Here, the remarkable progress achieved in vertically aligned nanocomposite thin films from a perspective of tuning functionalities through control of strain, defect, and interface is summarized. Thin FilmsThe ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/adma.201803241. 12 11 12where c 11 and c 12 are elastic moduli of the film material. Epitaxial strain gradually changes with film thickness in perovskite manganites. Figure 3 shows reciprocal space mapping or RSM (103) of La 0.7 Ca 0.3 MnO 3 (LCMO) films on STO (001) substrates. It captures the gradual strain relaxation process with increasing film thickness in manganite thin films. When the film is very thin, the interface is coherent with

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Section: Strain Defect and Microstructure Correlationmentioning

confidence: 99%

Metal Oxide Nanocomposites: A Perspective from Strain, Defect, and Interface

et al. 2018

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“…S olid-state ionic shuttles or conductors are of interest in energy storage, voltage-driven ion channels for neuromorphic computing, and various iontronics technologies wherein ionic injection and transport is coupled with electronic band structure modification in complex semiconductors (1,2). For the case of lithium ions, the ideal conductor should have a large concentration of mobile Li + and optimized migration channels with minimal activation energy for diffusion (3).…”

mentioning

confidence: 99%

Strongly correlated perovskite lithium ion shuttles

Sun

Kotiuga

Lim

et al. 2018

Proc. Natl. Acad. Sci. U.S.A.

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Solid-state ion shuttles are of broad interest in electrochemical devices, nonvolatile memory, neuromorphic computing, and biomimicry utilizing synthetic membranes. Traditional design approaches are primarily based on substitutional doping of dissimilar valent cations in a solid lattice, which has inherent limits on dopant concentration and thereby ionic conductivity. Here, we demonstrate perovskite nickelates as Li-ion shuttles with simultaneous suppression of electronic transport via Mott transition. Electrochemically lithiated SmNiO (Li-SNO) contains a large amount of mobile Li located in interstitial sites of the perovskite approaching one dopant ion per unit cell. A significant lattice expansion associated with interstitial doping allows for fast Li conduction with reduced activation energy. We further present a generalization of this approach with results on other rare-earth perovskite nickelates as well as dopants such as Na The results highlight the potential of quantum materials and emergent physics in design of ion conductors.

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“…Due to charge compensation, oxygen deficiency alters the B-site cation oxidation state, thereby reversibly modulating properties. Electrochemical control of oxygen vacancies using ionic gating has thus been demonstrated to tune the electronic, magnetic, and/or optical properties of cobaltites, [7,12,13,[21][22][23][24][25][26][27] manganites, [23,28,29] nickelates, [30,31] and ferrites, [8,24,[32][33][34] to name just a few examples in the field of oxide perovskites, as well as phenomena stemming from interlayer interactions in perovskite vertical heterostructures [33,35] and properties of various other oxides. [1] While this oxygen vacancy modulation is a key pathway toward electrochemical control of properties in oxides, electrochemical manipulation via other ions is…”

mentioning

confidence: 99%

Voltage Control of Patterned Metal/Insulator Properties in Oxide/Oxyfluoride Lateral Perovskite Heterostructures via Ion Gel Gating

Lefler

Postiglione

Leighton

et al. 2022

Adv Funct Materials

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Dynamic control of patterned properties in perovskite oxide films can enable new architectures for electronic, magnetic, and optical devices. In this study, it is shown that SrFeO3‐δ/SrFeO2F laterally‐heterostructured films enable voltage‐controlled tunable and reversible metal‐insulator patterned properties using room‐temperature ion gel gating. Specifically, SrFeO3‐δ film regions can be toggled between insulating HxSrFeO2.5 and metallic SrFeO3 by electrochemical redox, while SrFeO2F regions remain robustly insulating and are unaffected by ion gel gating. Various gating architectures are also compared and establish the advantages of employing a conductive substrate as the contacting electrode, as opposed to at the film surface, thereby achieving complete and reversible reduction and oxidation among SrFeO3‐δ, HxSrFeO2.5, and SrFeO3. This approach to voltage‐modulated patterned electronic, optical, and magnetic properties should be broadly applicable to oxide materials amenable to fluoridation, and potentially other forms of anion substitution.

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Evidence for oxygen vacancy manipulation in La1/3Sr2/3FeO3−𝜹 thin films via voltage controlled solid-state ionic gating

Cited by 8 publications

References 45 publications

Metal Oxide Nanocomposites: A Perspective from Strain, Defect, and Interface

Metal Oxide Nanocomposites: A Perspective from Strain, Defect, and Interface

Strongly correlated perovskite lithium ion shuttles

Voltage Control of Patterned Metal/Insulator Properties in Oxide/Oxyfluoride Lateral Perovskite Heterostructures via Ion Gel Gating

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