2007
DOI: 10.1063/1.2794790
|View full text |Cite
|
Sign up to set email alerts
|

Evidence for low density of nonradiative defects in ZnO nanowires grown by metal organic vapor-phase epitaxy

Abstract: 3 pagesInternational audienc

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

4
32
0

Year Published

2008
2008
2016
2016

Publication Types

Select...
5
3
1

Relationship

0
9

Authors

Journals

citations
Cited by 45 publications
(36 citation statements)
references
References 13 publications
4
32
0
Order By: Relevance
“…As shown in Fig. 8, decay time constant of ZNRs and ZNTs first decreases with temperature until 100-150 K and then slightly increases when the temperature further increases up to 300 K. This behavior is similar to the results obtained by Robin et al, 56 which can be explained by a thermal quenching of the nonradiative recombination due to a limited number of nonradiative defects. As increasing the temperature below 150 K, the donor bound excitons are thermalized into free carriers or FXs gradually, which enlarge the carrier quantity trapped by the nonradiative centers.…”
Section: Resultssupporting
confidence: 79%
“…As shown in Fig. 8, decay time constant of ZNRs and ZNTs first decreases with temperature until 100-150 K and then slightly increases when the temperature further increases up to 300 K. This behavior is similar to the results obtained by Robin et al, 56 which can be explained by a thermal quenching of the nonradiative recombination due to a limited number of nonradiative defects. As increasing the temperature below 150 K, the donor bound excitons are thermalized into free carriers or FXs gradually, which enlarge the carrier quantity trapped by the nonradiative centers.…”
Section: Resultssupporting
confidence: 79%
“…[22][23][24] However, the investigations by low temperature time resolved PL spectroscopy of ZnO nanorods are limited. 25,26 One of the significant differences between nanorods and an epilayer is the larger surface area of the former. This large surface area can be an advantage for some applications, for example, sensor devices.…”
Section: Introductionmentioning
confidence: 99%
“…Due to large lateral surfaces, which facilitate efficient strain relaxation, ZnO NWs and other nanostructures can be grown with a low defect density [1] on a vast variety of substrates. The high material quality combined with a wide and direct band gap, large exciton binding energy, and ability to control their nucleation sites, makes NWs attractive for applications in optoelectronic devices such as ultraviolet lasers [2], light emitting diodes [3] as well as for white lighting.…”
Section: Introduction Imentioning
confidence: 99%