Evidence for large monomolecular recombination contribution to threshold current in 1.3 [micro sign]m GaInNAs semiconductor lasers

Fehse, R.; Jin, S. R.; Sweeney, S. J.; Adams, A.R.; O’Reilly, Eoin P.; Riechert, H.; Illek, S.; Egorov, A. Yu.

doi:10.1049/el:20011033

Cited by 45 publications

(15 citation statements)

References 9 publications

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“…Since hydrostatic pressure increases the direct band gap of semiconductors, it is expected to suppress the Auger processes and hence reduce the threshold current, as previously reported [2,4]. For the GaInNAs system, however, the recent reports show that defect-related recombination is still significant which is related to the growth of this material [6]. It is also found that, with increasing pressure, the threshold current in GaInNAs lasers increases more rapidly than the ideal radiative current (∝ E g 2 ) at high pressure [7], which is in contrast to the reduction of the threshold current with increasing pressure in InGaAsP lasers [5].…”

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confidence: 81%

Quantifying pressure‐dependent recombination currents in GaInNAs lasers using spontaneous emission measurements

Jin

Sweeney

Tomić

et al. 2003

Physica Status Solidi (b)

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The pressure dependence of the total threshold current and its respective recombination components in 1.3 µm GaInNAs single quantum-well lasers has been determined by measuring for the first time the window-spontaneous emission under hydrostatic pressures at room temperature. It is shown that, above 6 kbar, the rapid increase of the threshold current with increasing pressure in GaInNAs lasers is related to the unusual increase of the Auger recombination current, while the monomolecular non-radiative current in the total threshold current is almost constant in the pressure range studied. Theoretical calculations show that the unusual increase of the Auger current is due to a large increase in the threshold carrier density with pressure, stronger than the reduction of the Auger coefficient leading to an overall increase in the Auger current.

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confidence: 81%

Quantifying pressure‐dependent recombination currents in GaInNAs lasers using spontaneous emission measurements

Jin

Sweeney

Tomić

et al. 2003

Physica Status Solidi (b)

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“…[1][2][3][4][5][6][7][8] Compared with InGaAsP lasers at the same emission wavelength, GaInNAs lasers have the smaller temperature sensitivity of threshold current, and hence, higher characteristic temperature T 0 as predicted theoretically. 1,9 However, the recent reports show that the defect-related nonradiative recombination is still severe in this material 10 due to the difficulty in the growth of highquality nitride compounds. 6 Meanwhile, Auger recombination also plays an important role in the recombination mechanisms of carriers.…”

Section: H Riechertmentioning

confidence: 99%

Unusual increase of the Auger recombination current in 1.3 μm GaInNAs quantum-well lasers under high pressure

Jin

Sweeney

Tomić

et al. 2003

Applied Physics Letters

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Single-mode quantum cascade lasers employing asymmetric Mach-Zehnder interferometer type cavities Appl. Phys. Lett. 101, 161115 (2012) Bistability patterns and nonlinear switching with very high contrast ratio in a 1550nm quantum dash semiconductor laser Appl. Phys. Lett. 101, 161117 (2012) Relative intensity noise of a quantum well transistor laser Appl. Phys. Lett. 101, 151118 (2012) Blue monolithic AlInN-based vertical cavity surface emitting laser diode on free-standing GaN substrate Appl. Phys. Lett. 101, 151113 (2012) Ground state terahertz quantum cascade lasers

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“…Therefore, the maximum performance of GaInNAs LDs has not yet been achieved. Some experimental studies have revealed that GaInNAs LDs still exhibit serious nonradiative recombination [25,26]. Nonradiative recombination may be related to intrinsic and extrinsic defects.…”

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confidence: 99%

High-Quality Growth of GaInNAs for Application to Near-Infrared Laser Diodes

Kondow

Ishikawa

2012

Advances in Optical Technologies

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GaInNAs was proposed and created in 1995. It can be grown pseudomorphically on a GaAs substrate and is a light-emitting material with a bandgap energy that corresponds to near infrared. By combining GaInNAs with GaAs, an ideal band lineup for laser-diode application is achieved. This paper presents the reproducible growth of high-quality GaInNAs by molecular beam epitaxy. Examining the effect of nitrogen introduction and its correlation with impurity incorporation, we find that Al is unintentionally incorporated into the epitaxial layer even though the Al cell shutter is closed, followed by the concomitant incorporation of O and C. A gas-phase-scattering model can explain this phenomenon, suggesting that a large amount of N 2 gas causes the scattering of residual Al atoms with occasional collisions resulting in the atoms being directed toward the substrate. Hence, the reduction of the sublimated Al beam during the growth period can suppress the incorporation of unintentional impurities, resulting in a highly pure epitaxial layer.

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Evidence for large monomolecular recombination contribution to threshold current in 1.3 [micro sign]m GaInNAs semiconductor lasers

Cited by 45 publications

References 9 publications

Quantifying pressure‐dependent recombination currents in GaInNAs lasers using spontaneous emission measurements

Quantifying pressure‐dependent recombination currents in GaInNAs lasers using spontaneous emission measurements

Unusual increase of the Auger recombination current in 1.3 μm GaInNAs quantum-well lasers under high pressure

High-Quality Growth of GaInNAs for Application to Near-Infrared Laser Diodes

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