Evidence for In-defect complexes in CdTe

Abstract

CdTe monocrystals were diffused with lOI9 cm-3 In atoms at 800 "C in Cd vapour. The local environment of lllCd populated by the radioactive decay of the nuclide "'In has been monitored with the time-differential perturbed angular-correlation method. The application of this technique provides the first direct information on the involvement of Indefect species in the compensation behaviour of highly doped CdTe. After quenching to room temperature, besides a substitutional fraction, two In-correlated complexes are found that involve interstitial or antisite defects. The complexes are formed and dissociate reversibly at 600 K. After slow oven cooling following the In diffusion, a third fraction is observed that is associated with InCd precipitates.

Defect interactions of group-I elements in cubic II-VI compounds

“…[30][31][32][33] This EFG is also observable after annealing CdTe under excess Te vapor at 860 K ͑see Fig. 4, bottom͒.…”

Perturbed-angular-correlation studies of In-vacancy pairs in Hg1−xCdxTe

“…The ͗111͘ orientation of the EFG tensor, which is also seen in other zincblende semiconductors, 8 at first seemed surprising, since the indium-vacancy pair itself has a ͗110͘ symmetry axis, and it is generally assumed that the EFG tensor shares the symmetry of the defect complex. 9 Indeed, a first-order point ion calculation, in which ions are treated as point charges affixed to their lattice sites, predicts a ͗110͘ orientation for the EFG zz axis.…”

“…The defect properties of CdTe have been studied extensively, utilizing electron paramagnetic resonance ͑EPR͒, 10 optically detected magnetic resonance ͑ODMR͒, 11,12 photoluminescence, 13 positron annihilation spectroscopy ͑PAS͒, 14 and perturbed angular correlation ͑PAC͒ spectroscopy. 8,9,[15][16][17] After CdTe was annealed for five days at 750°C in a Te atmosphere to promote the creation of Cd vacancies, isolated Cd vacancies were found by EPR in the singly negatively charged state. 10 A centers consisting of a Cd vacancy bound to an indium cation donor 11 or a chlorine anion donor 12 have been identified by ODMR spectroscopy.…”

Thermal treatment of indium-doped Cd1−xZnxTe single crystals

“…Here, in our research, the D complex peak exists in both PL spectra. According to dopant self-compensation effects and the approximated electro-neutrality condition principle [24,25], the D complex peak should be ascribed to not only a singly charged negative A-center defect complex but also [2In Cd…”