Evidence for highly p-type doping and type II band alignment in large scale monolayer WSe₂/Se-terminated GaAs heterojunction grown by molecular beam epitaxy

Abstract

Two-dimensional materials (2D) arranged in hybrid van der Waals (vdW) heterostructures provide a route toward the assembly of 2D and conventional III–V semiconductors.

Structural engineering brings new electronic properties to Janus ZrSSe and HfSSe monolayers

“…Alternatively, 2D transition metal dichalcogenides (TMDCs) with moderate band gaps (1.1-1.9 eV) have attracted increasing attention due to their fascinating characteristics, and thus are expected to be promising candidates for next-generation electronic and optoelectronic devices. [3][4][5] 2D HfX 2 and ZrX 2 (X = S, Se), for instance, have been illustrated to hold great potential for applications in thermoelectric devices as well as in photodetectors. [6][7][8] Combining 2D monolayers to realize heterostructures can not only tune the electronic properties but also can bring new physical phenomena, and this has become the core concept in electronic and photoelectronic devices.…”

“…Alternatively, 2D transition metal dichalcogenides (TMDCs) with moderate band gaps (1.1–1.9 eV) have attracted increasing attention due to their fascinating characteristics, and thus are expected to be promising candidates for next-generation electronic and optoelectronic devices. 3–5 2D HfX 2 and ZrX 2 (X = S, Se), for instance, have been illustrated to hold great potential for applications in thermoelectric devices as well as in photodetectors. 6–8…”

Epitaxial van der Waals heterostructures of Cr2Te3 on 2D materials

“…In this study, we have grown samples of 5 layers of Cr 2 Te 3 corresponding to a thickness of 6.1 nm on three different vdW surfaces: 1 monolayer of WSe 2 deposited on GaAs, 10 layers of Bi 2 Te 3 on Al 2 O 3 , which were both grown in situ by MBE and monolayer graphene, which was obtained by the controlled graphitization of 4H-SiC(0001) [40] in another reactor. WSe 2 was grown epitaxially on Se-passivated GaAs(111)B as detailed in [41]. Bi 2 Te 3 was grown epitaxially on sapphire.…”

High resolution and time resolved photoemission spectroscopy for developing more efficient materials to reduce energy consumption and increase renewable energy production

“…19 It is also possible to evidence the formation of interfacial dipole between two materials, by comparing the evolution in energy position of the work function and of the core levels before and after deposit of a second material on top of a first one (atoms, organic molecules, 2D materials on semiconductor or metal). 20 Interfacial dipole formation can drastically affect the electronic properties of the formed heterojunction.…”