Evidence for (Bi,Pb)–O Covalency in the High T C Ferroelectric PbTiO 3 –BiFeO 3 with Large Tetragonality

Wang

Huang

et al. 2013

Sci Rep

Self Cite

Control of negative thermal expansion is a fundamentally interesting topic in the negative thermal expansion materials in order for the future applications. However, it is a challenge to control the negative thermal expansion in individual pure materials over a large scale. Here, we report an effective way to control the coefficient of thermal expansion from a giant negative to a near zero thermal expansion by means of adjusting the spontaneous volume ferroelectrostriction (SVFS) in the system of PbTiO3-(Bi,La)FeO3 ferroelectrics. The adjustable range of thermal expansion contains most negative thermal expansion materials. The abnormal property of negative or zero thermal expansion previously observed in ferroelectrics is well understood according to the present new concept of spontaneous volume ferroelectrostriction. The present studies could be useful to control of thermal expansion of ferroelectrics, and could be extended to multiferroic materials whose properties of both ferroelectricity and magnetism are coupled with thermal expansion.

Section: Resultsmentioning

confidence: 87%

Section: Resultsmentioning

confidence: 99%

Effectively control negative thermal expansion of single-phase ferroelectrics of PbTiO3-(Bi,La)FeO3 over a giant range

Wang

Huang

et al. 2013

Sci Rep

Self Cite

“…3 It has been known that the high T C of PbTiO 3 -BiMeO 3 is associated with the strong hybridization between the Pb/Bi and O. 22 The replacement of ionic Ba 2þ to Pb 2þ /Bi 3þ would weaken such hybridization, resulting in the decrease in the T m . It is the same with the ionic Sr-substitution in the Bi(Ni,Ti)O 3 -PT system.…”

Section: -mentioning

confidence: 99%

Structure, piezoelectric, and ferroelectric properties of BaZrO3 substituted Bi(Mg1/2Ti1/2)O3-PbTiO3 perovskite

Fan

Journal of Applied Physics

Kang

et al. 2012

Self Cite

The structure and electric properties of (0.9-x)Bi(Mg1/2Ti1/2)O3-xPbTiO3-0.1BaZrO3 (0.45 ≤ x ≤ 0.53) ceramics were investigated. The morphotropic phase boundary between tetragonal ferroelectric and pseudo-cubic relaxor phases is ascertained at x = 0.50. The BaZrO3 substitution can much reduce the coercive field of Bi(Mg1/2Ti1/2)O3-PbTiO3. The studies on temperature dependence of both ferroelectric and dielectric constant indicate a direct evidence for the antiferroelectric relaxor phase, which was ever suggested in the binary system of Bi(Mg1/2Ti1/2)O3-PbTiO3. The phase transition of ferroelectric to antiferroelectric relaxor produces the thermal depoling below the Curie temperature. The ceramic of BMT-0.47PT-0.1BZ exhibits a high strain 0.37% and a large-signal d33 (530 pm/V) in the antiferroelectric-relaxor phase. BaZrO3 substituted Bi(Mg1/2Ti1/2)O3-PbTiO3 shows an analogous phase diagram to that of lead-free (Bi, Na)TiO3-BaTiO3.

“…[5][6][7][8][9][10][11][12][13][14][15][16] The improved ferroelectric performances in the BiMeO 3 -PbTiO 3 are ascribed to the strong hybridization between oxygens and A-site Pb/Bi or B-site cations which have a strong ferroelectric activity, such as Ti and Zn. 17,18 Bi substitution plays a unique role in considerable enhancement on both large polarization and high T C . 7 For instance, BiScO 3 -PbTiO 3 (BS-PT) solid solutions exhibit an excellent high temperature performance (T C ¼ 450 C and P r ¼ 74 lC cm…”

Section: Thin Filmsmentioning

confidence: 99%

Temperature-independent ferroelectric property and characterization of high-TC 0.2Bi(Mg1/2Ti1/2)O3-0.8PbTiO3 thin films

Zhang

Applied Physics Letters

Zhao

et al. 2013

Ferroelectric property stability against elevated temperature is significant for ferroelectric film applications, such as non-volatile ferroelectric random access memories. The high-TC 0.2Bi(Mg1/2Ti1/2)O3-0.8PbTiO3 thin films show the temperature-independent ferroelectric properties, which were fabricated on Pt(111)/Ti/SiO2/Si substrates via sol-gel method. The present thin films were well crystallized in a phase-pure perovskite structure with a high (100) orientation and uniform texture. A remanent polarization (2Pr) of 77 μC cm−2 and a local effective piezoelectric coefficient d33* of 60 pm/V were observed in the 0.2Bi(Mg1/2Ti1/2)O3-0.8PbTiO3 thin films. It is interesting to observe a behavior of temperature-independent ferroelectric property in the temperature range of room temperature to 125 °C. The remanent polarization, coercive field, and polarization at the maximum field are almost constant in the investigated temperature range. Furthermore, the dielectric loss and fatigue properties of 0.2Bi(Mg1/2Ti1/2)O3-0.8PbTiO3 thin films have been effectively improved by the Mn-doping.