Evidence for barrier-to-well injection of carriers in high quality ZnO/Zn0.9Mg0.1O multiple quantum wells grown on (111) Si

Growth conditions and structural properties of ZnMgO nanocolumns on Si(111)

“…Lin et al reported fabrication of ZnO film on Si(111) substrates by PLD buffered with a nanometer-thick GdO 3 (Ga 2 O 3 ), layer [11]. Wang et al was using a thin AlN buffer layer grown by MOCVD [12] and Pan et al was employing epitaxial Lu 2 O 3 buffer layer and thin ZnO nucleation layer [13]. The direct growth of ZnO or ZnMgO on Si usually results in oxidation of the Si surface and formation of amorphous silica layer.…”