Evidence for an odd-parity nematic phase above the charge-density-wave transition in a kagome metal

Asaba, T.; Onishi, A.; Kageyama, Y.; Kiyosue, T.; Ohtsuka, K.; Suetsugu, S.; Kohsaka, Y.; Gaggl, T.; Kasahara, Y.; Murayama, H.; Hashimoto, K.; Tazai, R.; Kontani, H.; Ortiz, B. R.; Wilson, S. D.; Li, Q.; Wen, H. -H.; Shibauchi, T.; Matsuda, Y.

doi:10.1038/s41567-023-02272-4

Cited by 9 publications

(4 citation statements)

References 39 publications

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“…To understand the origin of the Hall resistivity in the Cr-substituted sample, we compare it with the pristine ScV 6 Sn 6 sample. Previous reports on pristine crystal [30,31] have shown anomalous Hall effect (AHE)-like behavior in the Hall resistivity, which may be due to the formation of a loop current in the V kagome lattice, breaking the time reversal symmetry (TRS) [17,27]. However, substitution of the Cr atoms in the V site of the kagome lattice destroys the V-V bonds by inducing disorder.…”

Section: Resultsmentioning

confidence: 99%

“…The discovery of the charge density wave (CDW) in some of these compounds has introduced a captivating dimension to the research [8][9][10]. In AV 3 Sb 5 (A = K, Rb, Cs), the CDW coexists with a superconducting ground state [5,[11][12][13][14][15][16][17]. In antiferromagnetic hexagonal-FeGe, the CDW amplifies the ordered moment, justifying a deeper correlation between CDW and magnetism [9,18,19].…”

Section: Introductionmentioning

confidence: 99%

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Tuning charge density wave of kagome metal ScV₆Sn₆

Yi,

Feng,

Kumar

et al. 2024

New J. Phys.

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Compounds with a kagome lattice exhibit intriguing properties and the charge density wave (CDW) adds an additional layer of interest to research on them. In this study, we investigate the temperature and magnetic field dependent electrical properties under a chemical substitution and hydrostatic pressure of ScV6Sn6, a non-magnetic charge density wave (CDW) compound. Substituting 5 % Cr at the V site or applying 1.5 GPa of pressure shifts the CDW to 50 K from 92 K. This shift is attributed to the movement of the imaginary phonon band, as revealed by the phonon dispersion relation. The longitudinal and Hall resistivities respond differently under these stimuli. The magnetoresistance (MR) maintains its quasilinear behavior under pressure, but it becomes quadratic after Cr substitution. The anomalous Hall-like behavior of the parent compound persists up to the respective CDW transition under pressure, after which it sharply declines. In contrast, the nonlinear Hall resistivity of Cr substituted compounds follows a two-band model and originates from the multi carrier effect. These results clearly highlight the role of phonon contributions in the CDW transition and call for further investigation into the origin of the anomalous Hall-like behavior in the parent compound.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Tuning charge density wave of kagome metal ScV₆Sn₆

Yi,

Feng,

Kumar

et al. 2024

New J. Phys.

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“…[8][9][10][11][12][13][14][15][16][17][18][19][20] The kagome materials mentioned above and their sister compounds all have a large anomalous Hall effect (AHE), [2,7,[21][22][23][24][25][26][27][28][29][30][31] but only 𝐴V3Sb5 does not have the ferro-or ferri-magnetic ordering, not even the conclusive evidence of time reversal symmetry breaking (TRSB). [11,[32][33][34][35][36] Therefore, a magnetic system with V kagome lattice will be impor-tant for investigating the mechanism of the large AHE when V kagome lattice is in spontaneous TRSB. Fortunately, a newly discovered 𝑅V6Sn6 kagome family, with 𝑅 being the rare-earth elements, exactly satisfies the above requirement.…”

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confidence: 99%

Pressure-Tuned Intrinsic Anomalous Hall Conductivity in Kagome Magnets RV₆Sn₆ (R = Gd, Tb)

Kong 孔,

Tao 陶,

Zhang 张

et al. 2024

Chinese Phys. Lett.

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Exploration of exotic phenomena in magnetic topological systems is at the frontier of condensed matter physics, holding a significant promise for the applications in topological spintronics. However, complex magnetic structures carrying nontrivial topological properties hinder its progresses. Here, we investigate the pressure effect on the novel topological kagome magnets GdV6Sn6 and TbV6Sn6 to dig out the interplay between magnetic Gd/Tb layers and nonmagnetic V-based kagome sublattice. The pressure-tuned magnetic transition temperature T m in both compounds exhibit a turning point at the critical pressure P c, accompanying with a sign reversal in anomalous Hall effect (AHE). The separation of intrinsic and extrinsic contributions using the TYJ scaling model suggests that the intrinsic mechanism originating from the electronic Berry curvature holds the priority in the competition with extrinsic mechanism in AHE. Above findings can be attributed to the combined effect of pressure-tuned band topology and magnetic interaction in segregated layers. Our results provide a practical route to design and manipulate the intrinsic AHE in magnetic topological materials.

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“…Further platforms include cuprate superconductors [58] and kagome metals [59] in which light-or magnetic-induced discontinuous electronic transitions coexist with charge-order. Topological defects in the order parameter therefore provide a framework for understanding non-equilibrium electronic phase transitions, allowing all-optical control of hidden states of matter in a broad class of quantum materials [57,[60][61][62][63][64] .…”

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confidence: 99%

Mott resistive switching initiated by topological defects

Giannetti,

Milloch,

Figueruelo-Campanero

et al. 2024

Preprint

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Avalanche resistive switching is the fundamental process that triggers the sudden change of the electrical properties in solid-state devices under the action of intense electric fields[1]. Despite its relevance for information processing, ultrafast electronics, neuromorphic devices, resistive memories and brain-inspired computation[1-14], the nature of the local stochastic fluctuations that drive the formation of metallic regions within the insulating state has remained hidden. Here, using operando X-ray nano-imaging, we have captured the origin of resistive switching in a V2O3-based device under working conditions. V2O3 is a paradigmatic Mott material[3], which undergoes a first-order metal-to-insulator phase transition together with a lattice transformation that breaks the threefold rotational symmetry of the rhombohedral metallic phase[2,5,6,8-11,15]. We reveal a new class of volatile electronic switching triggered by nanoscale topological defects appearing in the shear-strain based order parameter that describes the insulating phase. Our results pave the way to the use of strain engineering approaches to manipulate such topological defects and achieve the full dynamical control of the electronic Mott switching. Topology-driven, reversible electronic transitions are relevant across a broad range of quantum materials, comprising transition metal oxides, chalcogenides and kagome metals.

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Evidence for an odd-parity nematic phase above the charge-density-wave transition in a kagome metal

Cited by 9 publications

References 39 publications

Tuning charge density wave of kagome metal ScV₆Sn₆

Tuning charge density wave of kagome metal ScV₆Sn₆

Pressure-Tuned Intrinsic Anomalous Hall Conductivity in Kagome Magnets RV₆Sn₆ (R = Gd, Tb)

Mott resistive switching initiated by topological defects

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Evidence for an odd-parity nematic phase above the charge-density-wave transition in a kagome metal

Cited by 9 publications

References 39 publications

Tuning charge density wave of kagome metal ScV6Sn6

Tuning charge density wave of kagome metal ScV6Sn6

Pressure-Tuned Intrinsic Anomalous Hall Conductivity in Kagome Magnets RV6Sn6 (R = Gd, Tb)

Mott resistive switching initiated by topological defects

Contact Info

Product

Resources

About

Tuning charge density wave of kagome metal ScV₆Sn₆

Tuning charge density wave of kagome metal ScV₆Sn₆

Pressure-Tuned Intrinsic Anomalous Hall Conductivity in Kagome Magnets RV₆Sn₆ (R = Gd, Tb)