Evidence for a surface-bound free radical mechanism during the decomposition of iPr2Te in the presence or absence of mercury and/or Me2Cd under MOVPE conditions obtained from deuterium-labelled precursors

Bell, William; Stevenson, John; Cole‐Hamilton, David J.; Hails, Janet E.

doi:10.1016/s0277-5387(00)80259-4

Cited by 23 publications

(13 citation statements)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…If the hydrogen passivation model is correct, this implies a minimizing of the availability of hydrogen radicals (H) in order to minimize hydrogen passivation of arsenic during either growth or subsequent annealing. From studies of deuterium-labeled Pr i 2 Te, 84 we are aware that the MOVPE process for MCT takes place via surface-bound free-radical reactions. Referring to reference 84 it can be seen that the decomposition of Me 2 Cd occurs via homolytic cleavage of the Cd-C bond to form Me, which can react with the carrier gas to form MeH (methane) and H. Me can react with Pr i 2 Te to form MeTePr i (methyl-iso-propyltelluride) and iso-propyl radicals (Pr i ).…”

Section: Discussionmentioning

confidence: 99%

“…Proposed mechanism for the co-decomposition Me 2 Cd and Pr i 2 Te showing the influence of Pr i 2 Te on radical multiplication. 84 The radical multiplication pathway is shown in italics M300) this may be because there was too little As in the sample, the sample was too warm or that strain was preventing the observation as discussed earlier in the ''Hydrogen in Semiconductors'' section. Additionally, no As-H incorporation is predicted when using (Me 2 N) 3 As as the As precursor.…”

Section: Discussionmentioning

confidence: 99%

See 1 more Smart Citation

As Doping in (Hg,Cd)Te: An Alternative Point of View

Hails

Irvine

Cole‐Hamilton

et al. 2008

Journal of Elec Materi

Self Cite

View full text Add to dashboard Cite

Acceptor doping of many II-VI compound semiconductors has proved problematic and doping of epitaxial mercury cadmium telluride (MCT, Hg 1-x Cd x Te) with arsenic is no exception. High-temperature (>400°C) anneals followed by a lower temperature mercury-rich vacancy-filling anneal are frequently required to activate the dopant. The model frequently used to explain p-type doping with arsenic invokes an amphoteric nature of group V atoms in the II-VI lattice. This requires that group VI substitution with arsenic only occurs under mercury-rich conditions either during growth or the subsequent annealing and involves site switching of the As. However, there are inconsistencies in the amphoteric model and unexplained experimental observations, including arsenic which is 100% active as grown by metalorganic vapor-phase epitaxy (MOVPE). A new model, based on hydrogen passivation of the arsenic, is therefore proposed.

show abstract

Section: Discussionmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

As Doping in (Hg,Cd)Te: An Alternative Point of View

Hails

Irvine

Cole‐Hamilton

et al. 2008

Journal of Elec Materi

Self Cite

View full text Add to dashboard Cite

show abstract

“…Pr i 2 Te. 27 In that study, we showed that Pr i 2 Te decomposes by Te±C bond cleavage to give 26Pr i? and Te.…”

Section: Introductionmentioning

confidence: 94%

Studies of the thermal and photochemical decomposition mechanisms of But2Se in the presence or absence of Me2Zn using deuterium labelled analogues

Pickett¹,

Foster²,

Maung³

et al. 1999

J. Mater. Chem.

View full text Add to dashboard Cite

“…21,27 In the presence of ground InSb at a susceptor temperature of 350°C, these same products were observed but with C 3 :C 6 ratio of 10. The extent of decomposition of Pr i 2 Te was also greater in the presence of ground InSb than over tellurium deposited in the reactor.…”

Section: Pyrolysis Of Pr I 2 Tementioning

confidence: 55%

“…Other products observed were the expected decomposition products 21 propene (C 3 H 6 ), propane (C 3 H 8 ), and 2,3-dimethylbutane (C 6 H 14 , Pr i Pr i ) in the ratio 24.5:20.3:1. The ratio of propene:propane is the same as that reported 27 for the pyrolysis in the absence of GaAs. At lower temperatures, e.g.…”

Section: Pyrolysis Of Pr I 2 Tementioning

confidence: 85%