A detailed experimental investigation of the basic characteristics of the radiation of crystalline xenon with Emax=2 eV (A band) is performed as a function of temperature, impurity concentration, lattice perfection, and irradiation dose. The radiation parameters of this band are compared with the same parameters of the radiation of free excitons, localized holes Xe2+*, and impurity centers Xe2O*, whose bands were recorded in parallel. The photoexcitation spectra of the A band and the time decay curves of luminescence are analyzed. Radiation with similar structure with Emax=2.05 eV is also found in the binary crystals Ar+Xe with high (∼10%) xenon concentrations. It is concluded that the observed radiation is due to intrinsic molecular-type excited states of localized in the interior volume of the crystal and lyingnear 10 eV in the conduction band.