Evaporation of Ag Nanotwinned Films on Si Substrates With Ion Beam Assistance

Wu, Po‐Ching; Chuang, Tung‐Han

doi:10.1109/tcpmt.2021.3108436

Cited by 6 publications

(3 citation statements)

References 29 publications

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“…Similar to the sputtered Ag film, the evaporated Ag film consists of numerous Ag columnar structure with high density of nanotwins stacking on each other. Since formation of columnar nanotwinned structure can be relatively difficult for evaporated Ag films, an additional ion bombardment is applied to the deposited film during evaporation [30]. The effect of ion bombardment during evaporation deposition seems to be accounted for the formation of high density (111)-oriented Ag nanotwins on sapphire substrate.…”

Section: Resultsmentioning

confidence: 99%

“…Although Wang et al [28] and Idrissi et al [24] synthesized a Pd nanotwinned structure on Si substrates by electron beam evaporation, they found that the films exhibited random orientation, and the twin densities are much lower than those of nanotwinned films manufactured by sputtering or electroplating methods. At the same time, Chuang et al has also reported evaporation of Ag nanotwinned films on Si substrates with ion beam assistance [30].…”

Section: Introductionmentioning

confidence: 99%

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Sputtering and Evaporating of High Density (111)-textured Ag Nanotwinned Films on Sapphire Wafers

Chen¹,

Lee²,

Chuang³

2022

Proceedings of the 8th World Congress on Mechanical, Chemical, and Material Engineering

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The excellent properties of nanotwinned structures have been a hot area of research in recent years. Silver (Ag) has the lowest stacking fault energy (SFE) among all FCC metals, which has a strong tendency to form a twin structure. Also, sapphire substrates are ideal for use in LED applications due to high-temperature resistance, high strength, good electrical insulations, and low dielectric loss. Depositing Ag nanotwinned films on sapphire substrates can serve as a perfect candidate for die bonding in LED manufacturing. In this study, two deposition methods had been demonstrated for the fabrication of high density (111)-textured Ag nanotwinned films on sapphire wafers. Microstructural analyses show that both the sputtered and evaporated Ag grains presented a high density of twin structure. The cross-sectional EBSD analysis of the sputtered Ag nanotwinned film indicated a highly (111)-preferred orientation to 34.6% of the overall grains. Further, the sputtering process allows the production of surface roughness of the Ag nanotwinned film up to 65.1 nm. The epitaxial growth of Ag nanotwinned films with (111)-preferred orientation can be utilized by both the deposition methods.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Sputtering and Evaporating of High Density (111)-textured Ag Nanotwinned Films on Sapphire Wafers

Chen¹,

Lee²,

Chuang³

2022

Proceedings of the 8th World Congress on Mechanical, Chemical, and Material Engineering

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“…In addition, evaporated film has excellent purity due to the high vacuum condition. Most importantly, the process is relatively cheap as compared with other deposition techniques and is therefore the one most popularly applied for the backside metallization of power IC wafers in industry [11].…”

Section: Introductionmentioning

confidence: 99%

Mechanism of the Evaporation of Ag Nano-Twinned Films on Si Wafers with Assistance of Ion Beam Bombardment

Chuang¹,

Chen²,

Wu³

2022

IJMMME

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Ag nanotwinned thin film with a thickness of about 4 μm has been evaporated on an 8-inch Si wafer with the assistance of ion beam bombardment. FIB cross-sectional imaging revealed many columnar grains with an average width of about 0.5 μm containing numerous parallel Ag nanotwins. The XRD spectrum showed a strong Ag ( 111) peak without any other crystal orientations both in the central and edge regions, indicating the (111) preferred orientation of the Ag nanotwinned films. The results were consistent with top-view EBSD inverse pole figure analysis showing a very high density of the (111) orientation, 85.2±1.9%, on the surface of the Si wafer. A modified stress relaxation model is proposed to explain the enhancement of the formation of a high density of nanotwins in the Ag films evaporated with simultaneous ion bombardment.

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Ion Bombardment-Induced Stress Mechanism for the Formation of Ag Nanotwinned Films on Si Substrates

Chuang,

Lin,

Chen

et al. 2024

J. Electron. Mater.

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Evaporation of Ag Nanotwinned Films on Si Substrates With Ion Beam Assistance

Cited by 6 publications

References 29 publications

Sputtering and Evaporating of High Density (111)-textured Ag Nanotwinned Films on Sapphire Wafers

Sputtering and Evaporating of High Density (111)-textured Ag Nanotwinned Films on Sapphire Wafers

Mechanism of the Evaporation of Ag Nano-Twinned Films on Si Wafers with Assistance of Ion Beam Bombardment

Ion Bombardment-Induced Stress Mechanism for the Formation of Ag Nanotwinned Films on Si Substrates

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