Evaporation Behavior of SiC Powder for Single Crystal Growth-An Experimental Study on Thermodynamics and Kinetics

Pisch, Alexander; Ferraria, A.M.; Chatillon, C.; Blanquet, Elisabeth; Pons, M.; Bérnard, C.; Anikin, Mikhail; Madar, R.

doi:10.4028/www.scientific.net/msf.338-342.91

Cited by 11 publications

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“…where (10) Sublimation and condensation coefficients related to the vapour species are not accurately known, though some attempts to measure them have been reported. 27 Thus, we will make use of assumptions that could affect the absolute value of the activities, which however do not alter the concept presented in this paper. The evaporation coefficients of all the vapour species are equal to a unique and same value of a SiC representing the mean evaporation mechanism.…”

Section: Description Of the Thermochemical Modelmentioning

confidence: 99%

A first step toward bridging silicon carbide crystal properties and physical chemistry of crystal growth

et al. 2016

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International audienceThe links between the occurrence of a given silicon carbide (SiC) polytype and crystal growth conditions have been mainly empirically described. Although studies are a little more advanced, a similar description can be applied to point defects and especially dopants in the crystals. We propose a method to determine such links, based on a coupled thermodynamic and mass transport model, where SiC is treated as a solid solution. We implemented such an approach to the case of the seeded sublimation growth process, which is currently the industrial bulk growth process for SiC single crystalline ingots. The computation of both Si and C activities in the SiC crystal, between the SiC-C and SiC-Si two-phase equilibria, allowed first the assessment of the SiC crystal chemistry and second the linking of SiC-C and SiC-Si chemistry with the growth process parameters. We demonstrate that depending on the temperature, pressure and a temperature gradient, the activities of Si and C in the crystals can be described and tuned. The case of cubic polytype (3C-SiC) formation is specifically discussed. Its stabilization requires a high Si activity and a low C activity in the SiC crystal, meaning that the synthesis conditions must be close to the limit at the SiC + Si phase boundary

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Section: Description Of the Thermochemical Modelmentioning

confidence: 99%

A first step toward bridging silicon carbide crystal properties and physical chemistry of crystal growth

et al. 2016

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“…[79] and confirmed by Pisch et al [80]. The influence of these evaporation coefficients on the vaporization of SiC-SiO2 mixtures, which are also important in explaining the behavior of the SiC / SiO2 interface, was estimated by Jacobson et al [57] and Honstein et al [58,61] using mass spectrometry coupled to Knudsen cells.…”

Section: Non-equilibrium Vaporizationmentioning

confidence: 70%

Thermodynamic assessment of the different steps observed during SiC oxidation

Chatillon

Teyssandier

2022

Journal of the European Ceramic Society

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“…Those species are already known to be responsible for the SiC growth by sublimation. [13,14] Notice that at 1950°C, Si 2 C should contribute to the SiC formation by more than 80 % for both Si and C elements. As the temperature increases, this contribution decreases in favor of SiC 2 .…”

Section: Si-c-h Chemical Systemmentioning

confidence: 98%

Thermodynamic Aspects of the Growth of SiC Single Crystals using the CF‐PVT Process

Chaussende

Blanquet

Baillet

et al. 2006

Chemical Vapor Deposition

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The main trends that govern the continuous-feed physical vapor transport (PVT), bulk-crystal-growth process is investigated experimentally, together with thermodynamic and computation fluid dynamics (CFD) calculations. Several chemical systems are considered. An analysis of the chemistry of every successive step (CVD, transfer, and PVT) is presented first. The effects of hydrogen and chlorine are then investigated. Then, the interaction between the different steps is discussed. The strong chemical interaction which exists between the CVD and the PVT zones is demonstrated to require the consideration of the whole process and not the two zones separately.

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Evaporation Behavior of SiC Powder for Single Crystal Growth-An Experimental Study on Thermodynamics and Kinetics

Cited by 11 publications

References 0 publications

A first step toward bridging silicon carbide crystal properties and physical chemistry of crystal growth

A first step toward bridging silicon carbide crystal properties and physical chemistry of crystal growth

Thermodynamic assessment of the different steps observed during SiC oxidation

Thermodynamic Aspects of the Growth of SiC Single Crystals using the CF‐PVT Process

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