Evaporated films of arsenic trisulfide: Physical model of effects of light exposure and heat cycling

Keneman, S. A.; Bordogna, Joseph; Zemel, J.N.

doi:10.1063/1.325555

Cited by 36 publications

(11 citation statements)

References 59 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…1, curve 1) was close to about 69…70%, so corresponding in respect to the Fresnel formula T = 2n/(n 2 +1) to the refractive index n reaching ~2.5, which is well agreed with the known literature data [25,26]. Since the white arsenolite As 4 O 6 layer appeared due to decomposition-oxidation reaction activated by high-energy ionizing radiation can be easily removed from surface by wet polishing [20,21,27,28], we presented the resulting spectra for both cleaned and uncleaned samples (Fig. 1, curves 3 and 2, respectively).…”

Section: Resultssupporting

confidence: 78%

See 1 more Smart Citation

On the origin of radiation-induced metastability in vitreous chalcogenide semiconductors: The role of intrinsic and impurity-related destruction-polymerization transformations

Shpotyuk¹,

Vakiv²,

Shpotyuk³

et al. 2015

Semicond. Phys. Quantum Electron. Optoelectron.

View full text Add to dashboard Cite

Abstract. Radiation-optical effects in vitreous chalcogenide semiconductors are comprehensively analyzed as resulting from both intrinsic and impurity-related redistribution of covalent chemical bonds known also together as destructionpolymerization transformations. Two types of experimental measuring protocols can be used to study radiation-induced effects within ex-situ direct or in-situ backward measuring chronology, the latter being more adequate for correct separated testing of competitive inputs from both channels of destruction-polymerization transformations. Critical assessment is given on speculations trying to ignore intrinsic radiation-structural transformations in As 2 S 3 glass in view of accompanying oxidation processes. In final, this glass is nominated as the best model object among wide group of vitreous chalcogenide semiconductors revealing the highest sensitivity to radiation-induced metastability.

show abstract

Section: Resultssupporting

confidence: 78%

“…The simplest way to avoid this problem within measuring procedure arranged in direct chronology is to remove the appeared arsenolite layer by delicate hand polishing with a moistened cotton swab [20,27,28]. As a result, we can record the optical transmission spectrum of cleaned γ-irradiated v-As 2 S 3 sample (Fig.…”

Section: Resultsmentioning

confidence: 99%

On the origin of radiation-induced metastability in vitreous chalcogenide semiconductors: The role of intrinsic and impurity-related destruction-polymerization transformations

Shpotyuk¹,

Vakiv²,

Shpotyuk³

et al. 2015

Semicond. Phys. Quantum Electron. Optoelectron.

View full text Add to dashboard Cite

show abstract

“…The oxidation processes due to decomposition of As 2 S 3 and further formation of As 2 O 3 and S phases were reported in the case of prolonged photo-exposure of As 2 S 3 thin films as well [2,3]. But regarding photostructural changes, the possibility of in-situ experiment, i.e.…”

Section: Introductionmentioning

confidence: 99%

Radiation-induced optical darkening and oxidation effects in As2S3 glass

Kavetskyy¹

2014

Semicond. Phys. Quantum Electron. Optoelectron.

View full text Add to dashboard Cite

Abstract. The long-wave shift of fundamental optical absorption edge with decreasing the sample's transparency in the saturation region in the As 2 S 3 bulk glass (2 mm thick) due to radiation treatment by 60 Co -quanta with the average energy E = 1.25 MeV and accumulated dose  = 2.41 MGy is reported. The red shift (radiation-induced optical darkening effect) is detected within the period of 2-3 months after -irradiation able to cause the well-known static radiation-induced optical effect. The detected decrease in the slope of () curve in the fundamental optical absorption edge region after -irradiation, resulting in the maximum difference of optical transmittance for the unirradiated and -irradiated samples (h) max at the level 33.5%, can be interpreted within the radiationinduced defect formation processes occurring in the structural network of glass. At the same time, as expected from literature, the observed decrease in the sample's transparency at the level 33% upon radiation is plausibly caused by the accompanying radiation-induced oxidation processes that are the most probably related with appearance of As 2 O 3 (arsenolite) crystals and S phases at the surface of -irradiated sample, forming a white oxidized layer visible to the eye. The disadvantage of As 2 S 3 glass to be selected as the best model object for X-ray diffraction study of -radiation-structural changes, especially in respect to the first sharp diffraction peak, is considered.

show abstract

“…The experiment was carried out by use of the identical experimental setup and conditions that were done in our previous work [16]. Although the observation of As 2 O 3 microcrystals has been reported by many authors [17][18][19][20][21][22][23], there is not such an attempt as done in the present work. Moreover, we discuss a distinct difference in these two photoinduced phenomena between Ag and Cu addition, which is attributed to the difference between bonding and electronic properties of AgSe and Cu-Se bonds in the glass network.…”

Section: Introductionmentioning

confidence: 91%