Evaluation of Ultra-thin Layer Fabricated by Wet-process as a Pore-Seal for Porous Low-k Films

Ono, Shoko; Kohmura, Kazuo; Tanaka, Hirofumi; Kayaba, Yasuhisa; Kikkawa, Takamaro

doi:10.1557/opl.2011.1227

Cited by 3 publications

(2 citation statements)

References 9 publications

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“…[16] It was also reported that molecular structure of pore sealant determines the pore seal performance. [17] In order to apply the pore seal layer in future ULSI Cu interconnect, the understanding how metals or the species of plasma is blocked by the pore seal layer is highly important.…”

Section: Introductionmentioning

confidence: 99%

Structural Analysis of Pore Seal Layer Fabricated by Wet-process on Porous Low-k Films

et al. 2013

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Pore sealing has become a critical issue for the implementation of porous low-k dielectrics and for realizing acceptable reliability performance of the interconnect. This study focuses on fabrication of ultra-thin, conformal and plasma resistant pore seal layer and on understanding parameters playing a role in sealing the surfaces of porous low-k films. It was found that 2.5 nm-thick pore seal layer shows a perfect toluene seal property for the porous lowk film whose pore radius is 1.48 nm. The pore seal layer still show a good toluene seal property after irradiation of He plasma at 250℃ for 10 sec. The increments of dielectric constant by applying the pore seal layer and by the He plasma irradiation for 10 sec are 0.04 and 0.03, respectively. Interestingly, all of toluene seal property, refractive index of the bottom part of the film and dielectric constant started to deteriorate after irradiation of He plasma for 20 sec. It was suggested that when toluene seal property degrades, plasma would start diffusing into pores and both refractive index of the bottom part of the film and k value start to increase.

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Section: Introductionmentioning

confidence: 99%

Structural Analysis of Pore Seal Layer Fabricated by Wet-process on Porous Low-k Films

et al. 2013

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“…[10] We discovered the phenomena that the ultra-thin layer suppresses the diffusion of PVD-Cu by evaluations of cross-sectional TEM and BTS measurement. [11] The understanding of mechanisms playing a role in sealing the surfaces of porous dielectrics is fundamentally important for an effective integration of new materials in the interconnect processing. In this paper, we prepared various types of pore sealants and porous low-k and studied the relationship between structure of pore sealants and pore size of porous low-k using toluene based ellipsometric porosimetry (EP) measurements.…”

Section: Introductionmentioning

confidence: 99%

Pore Seal Property of Ultra-thin Layer for Porous Low-k Films revealed by Ellipsometric Porosimetry

et al. 2012

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It was found for the first time that the control of the size of pore sealant is important to prevent diffusions of pore sealant into pores of porous low-k films and to achieve a good toluene seal property. Two pore sealants (PS-A, B) were prepared and the seal property and porous structure were studied using toluene based ellipsometric porosimetry (EP) measurements. It was revealed that small pore sealant (PS-B) diffuses into pores of porous low-k (PLK) films and did not show any seal property, while large pore sealant (PS-A) does not diffuse into pores of porous low-k films and shows a good toluene seal property. Ellipsometry shows that PS-A forms conformal layer only on the vicinity of surface of porous low-k films, but porous structure of porous low-k films at the bottom part is kept, according the fact that the refractive index did not increase.Furthermore, we developed a new pore seal material (PS-C) to form ultra-thin conformal layer by a single pass, which shows a good toluene seal property. The dielectric constant increased from 2.10 to 2.25 by covering with PS-C. The obtained layer also shows the effect as the protect layer of porous low-k films from plasma damages.

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Formation of Ultra-Thin Pore Seal Layer on Porous Low-k Films

et al. 2015

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In order to integrate porous dielectric materials into the next generation of Cu/low-k interconnect, the porous material has to be sealed against metal barrier precursor. We have reported pore sealants which forms ultra-thin (< 3 nm-thick) layer on top of the surface of porous low-k film while the pore sealant does not diffuse into pores. In this study, it was investigated how pore seal layer is formed on the surface of porous material and how pore mouths are sealed by pore seal layer. It was found that 1) thickness of the pore seal layer is well-controlled in the range < 5 nm, by varying spin rate and concentration of solid, 2) minimal thicknesses of the pore seal layer needed to achieve an efficient sealing for porous low-k films whose pore radius is 1.5 nm was 2.6 nm. 3) Larger pores, whose pore radius is 4.2 nm, were sealed completely with an expansion of our technology.

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Evaluation of Ultra-thin Layer Fabricated by Wet-process as a Pore-Seal for Porous Low-k Films

Cited by 3 publications

References 9 publications

Structural Analysis of Pore Seal Layer Fabricated by Wet-process on Porous Low-k Films

Structural Analysis of Pore Seal Layer Fabricated by Wet-process on Porous Low-k Films

Pore Seal Property of Ultra-thin Layer for Porous Low-k Films revealed by Ellipsometric Porosimetry

Formation of Ultra-Thin Pore Seal Layer on Porous Low-k Films

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